KR100301354B1 - 레지스트조성물및레지스트패턴형성방법 - Google Patents

레지스트조성물및레지스트패턴형성방법 Download PDF

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Publication number
KR100301354B1
KR100301354B1 KR1019980017364A KR19980017364A KR100301354B1 KR 100301354 B1 KR100301354 B1 KR 100301354B1 KR 1019980017364 A KR1019980017364 A KR 1019980017364A KR 19980017364 A KR19980017364 A KR 19980017364A KR 100301354 B1 KR100301354 B1 KR 100301354B1
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KR
South Korea
Prior art keywords
group
monomer unit
resist
resist composition
polymer
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Expired - Lifetime
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KR1019980017364A
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English (en)
Korean (ko)
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KR19980087046A (ko
Inventor
꼬지 노자끼
에이 야노
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
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Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19980087046A publication Critical patent/KR19980087046A/ko
Application granted granted Critical
Publication of KR100301354B1 publication Critical patent/KR100301354B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
KR1019980017364A 1997-05-20 1998-05-14 레지스트조성물및레지스트패턴형성방법 Expired - Lifetime KR100301354B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP130131 1997-05-20
JP13013197A JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法

Publications (2)

Publication Number Publication Date
KR19980087046A KR19980087046A (ko) 1998-12-05
KR100301354B1 true KR100301354B1 (ko) 2001-11-22

Family

ID=15026701

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980017364A Expired - Lifetime KR100301354B1 (ko) 1997-05-20 1998-05-14 레지스트조성물및레지스트패턴형성방법

Country Status (4)

Country Link
US (1) US6656659B1 (enExample)
JP (1) JP3819531B2 (enExample)
KR (1) KR100301354B1 (enExample)
TW (2) TW565739B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360412B1 (ko) * 2000-07-11 2002-11-13 삼성전자 주식회사 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
SG76651A1 (en) 1999-03-31 2000-11-21 Sumitomo Chemical Co Chemical amplification type positive resist
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100533361B1 (ko) * 1999-08-23 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막 중합체 및 그의 제조방법
KR100729679B1 (ko) * 1999-11-02 2007-06-18 가부시끼가이샤 도시바 포토레지스트용 고분자 화합물 및 포토레지스트용 수지조성물
JP4282185B2 (ja) 1999-11-02 2009-06-17 株式会社東芝 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
JP4576737B2 (ja) 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
TWI291953B (enExample) 2001-10-23 2008-01-01 Mitsubishi Rayon Co
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
WO2004067592A1 (ja) 2003-01-31 2004-08-12 Mitsubishi Rayon Co., Ltd. レジスト用重合体およびレジスト組成物
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
TWI291473B (en) 2004-06-08 2007-12-21 Tokyo Ohka Kogyo Co Ltd Polymer, positive resist composition, and method for forming resist pattern
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2006028071A1 (ja) 2004-09-10 2006-03-16 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト用重合体の製造方法、レジスト組成物、およびパターンが形成された基板の製造方法
DE102004047249A1 (de) * 2004-09-24 2006-04-06 Infineon Technologies Ag Lithographieverfahren zur Herstellung hochaufgelöster Fotoresiststrukturen
WO2010101010A1 (ja) 2009-03-03 2010-09-10 三菱瓦斯化学株式会社 アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物
US9023578B2 (en) 2009-07-07 2015-05-05 Mitsubishi Rayon Co., Ltd. Copolymer for lithography and method for evaluating the same
TWI455948B (zh) 2009-07-07 2014-10-11 Mitsubishi Rayon Co 聚合體的製造方法、微影用聚合體、光阻組成物及基板的製造方法
KR101738480B1 (ko) * 2009-07-30 2017-05-23 주식회사 동진쎄미켐 자가정렬 이중 패턴 형성용 포토레지스트 조성물
KR20120120222A (ko) * 2010-01-14 2012-11-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 비시클로헥산 유도체 화합물 및 그 제조 방법
JP5660483B2 (ja) * 2010-03-12 2015-01-28 国立大学法人東北大学 レジスト用重合体組成物、レジスト組成物、およびパターンが形成された基板の製造方法
WO2014175275A1 (ja) 2013-04-23 2014-10-30 三菱瓦斯化学株式会社 新規脂環式エステル化合物、（メタ）アクリル共重合体およびそれを含む感光性樹脂組成物
JP6287552B2 (ja) 2013-06-14 2018-03-07 三菱ケミカル株式会社 レジスト用共重合体、およびレジスト用組成物
CN105934448B (zh) 2014-01-31 2018-02-09 三菱瓦斯化学株式会社 (甲基)丙烯酸酯化合物、(甲基)丙烯酸类共聚物和包含其的感光性树脂组合物
KR20160122117A (ko) 2014-02-14 2016-10-21 미츠비시 가스 가가쿠 가부시키가이샤 (메트)아크릴산에스테르 화합물 및 그 제조 방법
CN105980347B (zh) 2014-02-14 2019-08-16 三菱瓦斯化学株式会社 新型脂环式酯化合物的制造方法、新型脂环式酯化合物、将其聚合的(甲基)丙烯酸系共聚物、和包含其的感光性树脂组合物
JP7515995B2 (ja) * 2020-04-01 2024-07-16 株式会社日本触媒 Ｎ－置換マレイミド系重合体、及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360412B1 (ko) * 2000-07-11 2002-11-13 삼성전자 주식회사 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물

Also Published As

Publication number Publication date
TW565739B (en) 2003-12-11
TWI229782B (en) 2005-03-21
JPH10319595A (ja) 1998-12-04
TW200403529A (en) 2004-03-01
KR19980087046A (ko) 1998-12-05
JP3819531B2 (ja) 2006-09-13
US6656659B1 (en) 2003-12-02

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