JP3819531B2 - レジスト組成物及びレジストパターン形成方法 - Google Patents

レジスト組成物及びレジストパターン形成方法 Download PDF

Info

Publication number
JP3819531B2
JP3819531B2 JP13013197A JP13013197A JP3819531B2 JP 3819531 B2 JP3819531 B2 JP 3819531B2 JP 13013197 A JP13013197 A JP 13013197A JP 13013197 A JP13013197 A JP 13013197A JP 3819531 B2 JP3819531 B2 JP 3819531B2
Authority
JP
Japan
Prior art keywords
group
resist composition
resist
monomer unit
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13013197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10319595A (ja
JPH10319595A5 (enExample
Inventor
耕司 野崎
映 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15026701&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3819531(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13013197A priority Critical patent/JP3819531B2/ja
Priority to TW087106189A priority patent/TW565739B/zh
Priority to TW092126682A priority patent/TWI229782B/zh
Priority to KR1019980017364A priority patent/KR100301354B1/ko
Priority to US09/080,530 priority patent/US6656659B1/en
Publication of JPH10319595A publication Critical patent/JPH10319595A/ja
Publication of JPH10319595A5 publication Critical patent/JPH10319595A5/ja
Publication of JP3819531B2 publication Critical patent/JP3819531B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
JP13013197A 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法 Expired - Lifetime JP3819531B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13013197A JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法
TW087106189A TW565739B (en) 1997-05-20 1998-04-22 Resist composition suitable for short wavelength exposure and resist pattern forming method
TW092126682A TWI229782B (en) 1997-05-20 1998-04-22 Resist composition suitable for short wavelength exposure and resist pattern forming method
KR1019980017364A KR100301354B1 (ko) 1997-05-20 1998-05-14 레지스트조성물및레지스트패턴형성방법
US09/080,530 US6656659B1 (en) 1997-05-20 1998-05-18 Resist composition suitable for short wavelength exposure and resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13013197A JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法

Publications (3)

Publication Number Publication Date
JPH10319595A JPH10319595A (ja) 1998-12-04
JPH10319595A5 JPH10319595A5 (enExample) 2005-01-20
JP3819531B2 true JP3819531B2 (ja) 2006-09-13

Family

ID=15026701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13013197A Expired - Lifetime JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法

Country Status (4)

Country Link
US (1) US6656659B1 (enExample)
JP (1) JP3819531B2 (enExample)
KR (1) KR100301354B1 (enExample)
TW (2) TWI229782B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
EP1041442B1 (en) 1999-03-31 2004-10-27 Sumitomo Chemical Company, Limited Chemical amplification type positive resist
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100533361B1 (ko) * 1999-08-23 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막 중합체 및 그의 제조방법
JP4282185B2 (ja) 1999-11-02 2009-06-17 株式会社東芝 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
TW581939B (en) * 1999-11-02 2004-04-01 Toshiba Corp A high molecular compound for photoresist and a photoresist resin composition
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
JP4576737B2 (ja) 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100360412B1 (ko) * 2000-07-11 2002-11-13 삼성전자 주식회사 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
TWI291953B (enExample) 2001-10-23 2008-01-01 Mitsubishi Rayon Co
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4881002B2 (ja) 2003-01-31 2012-02-22 三菱レイヨン株式会社 レジスト用重合体およびレジスト組成物
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US7494759B2 (en) * 2004-05-31 2009-02-24 Tokyo Ohka Kogyo Co., Ltd. Positive resist compositions and process for the formation of resist patterns with the same
US7763412B2 (en) 2004-06-08 2010-07-27 Tokyo Ohka Kogyo Co., Ltd. Polymer, positive resist composition and method for forming resist pattern
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US8476401B2 (en) 2004-09-10 2013-07-02 Mitsubishi Rayon Co., Ltd. Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon
DE102004047249A1 (de) * 2004-09-24 2006-04-06 Infineon Technologies Ag Lithographieverfahren zur Herstellung hochaufgelöster Fotoresiststrukturen
KR101646813B1 (ko) 2009-03-03 2016-08-08 미츠비시 가스 가가쿠 가부시키가이샤 아다만탄 유도체, 그의 제조방법 및 그것을 원료로 하는 중합체, 및 수지 조성물
KR101432395B1 (ko) 2009-07-07 2014-08-20 미츠비시 레이온 가부시키가이샤 중합체의 제조 방법, 리소그라피용 중합체, 레지스트 조성물, 및 기판의 제조 방법
WO2011004787A1 (ja) 2009-07-07 2011-01-13 三菱レイヨン株式会社 リソグラフィー用共重合体およびその評価方法
KR101738480B1 (ko) * 2009-07-30 2017-05-23 주식회사 동진쎄미켐 자가정렬 이중 패턴 형성용 포토레지스트 조성물
WO2011086933A1 (ja) 2010-01-14 2011-07-21 三菱瓦斯化学株式会社 ビシクロヘキサン誘導体化合物及びその製造方法
JP5660483B2 (ja) * 2010-03-12 2015-01-28 国立大学法人東北大学 レジスト用重合体組成物、レジスト組成物、およびパターンが形成された基板の製造方法
CN105143291B (zh) 2013-04-23 2017-03-22 三菱瓦斯化学株式会社 新型脂环式酯化合物、(甲基)丙烯酸类共聚物以及包含它的感光性树脂组合物
JP6287552B2 (ja) 2013-06-14 2018-03-07 三菱ケミカル株式会社 レジスト用共重合体、およびレジスト用組成物
CN105934448B (zh) 2014-01-31 2018-02-09 三菱瓦斯化学株式会社 (甲基)丙烯酸酯化合物、(甲基)丙烯酸类共聚物和包含其的感光性树脂组合物
US10005714B2 (en) 2014-02-14 2018-06-26 Mitsubishi Gas Chemical Company, Inc. (Meth)acrylic acid ester compound and production method therefor
CN105980347B (zh) 2014-02-14 2019-08-16 三菱瓦斯化学株式会社 新型脂环式酯化合物的制造方法、新型脂环式酯化合物、将其聚合的(甲基)丙烯酸系共聚物、和包含其的感光性树脂组合物
JP7515995B2 (ja) * 2020-04-01 2024-07-16 株式会社日本触媒 Ｎ－置換マレイミド系重合体、及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法

Also Published As

Publication number Publication date
TWI229782B (en) 2005-03-21
TW565739B (en) 2003-12-11
JPH10319595A (ja) 1998-12-04
TW200403529A (en) 2004-03-01
KR19980087046A (ko) 1998-12-05
US6656659B1 (en) 2003-12-02
KR100301354B1 (ko) 2001-11-22

Similar Documents

Publication Publication Date Title
JP3819531B2 (ja) レジスト組成物及びレジストパターン形成方法
JP4012600B2 (ja) 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法
JP3297272B2 (ja) レジスト組成物及びレジストパターンの形成方法
JPH1112326A5 (enExample)
KR100242224B1 (ko) 레지스트 조성물, 레지스트 패턴의 형성 방법 및 반도체 장치의 제조 방법
JP3859353B2 (ja) ネガ型レジスト組成物およびレジストパターンの形成方法
JP5687442B2 (ja) 光酸発生剤およびこれを含むフォトレジスト
US20030091927A1 (en) Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion
KR100561498B1 (ko) 중합체 블렌드, 그것의 제조 방법 및 사용 방법
JP2002088124A (ja) 縮合環の芳香族環を含む保護基を有する感光性ポリマー及びこれを含むレジスト組成物
TW201233666A (en) Lactone photoacid generators and resins and photoresists comprising same
KR100520183B1 (ko) 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
TW201107881A (en) Novel resins and photoresist compositions comprising same
KR20000047041A (ko) 신규의 포토레지스트 가교 단량체, 그 중합체 및이를 이용한포토레지스트 조성물
TW200307175A (en) Acetal protected polymers and photoresist compositions thereof
JP4144957B2 (ja) レジスト組成物及びレジストパターンの形成方法
JP3587770B2 (ja) フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
KR20020096666A (ko) 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
JP3547376B2 (ja) フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子
TWI307451B (en) Photoresist composition
JP4127937B2 (ja) レジスト組成物及びレジストパターンの形成方法
US6602649B2 (en) Photoresist monomers, polymers thereof and photoresist compositions containing the same
JP3781939B2 (ja) ネガ型レジスト組成物及びレジストパターンの形成方法
KR100732285B1 (ko) 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
KR100557610B1 (ko) 신규한 포토레지스트 단량체, 그의 중합체 및 이를 함유하는 포토레지스트 조성물

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040220

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060525

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060606

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060615

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100623

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110623

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120623

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120623

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130623

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140623

Year of fee payment: 8

EXPY Cancellation because of completion of term