JPH10319595A5 - - Google Patents

Info

Publication number
JPH10319595A5
JPH10319595A5 JP1997130131A JP13013197A JPH10319595A5 JP H10319595 A5 JPH10319595 A5 JP H10319595A5 JP 1997130131 A JP1997130131 A JP 1997130131A JP 13013197 A JP13013197 A JP 13013197A JP H10319595 A5 JPH10319595 A5 JP H10319595A5
Authority
JP
Japan
Prior art keywords
group
monomer unit
resist composition
composition according
protecting group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997130131A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10319595A (ja
JP3819531B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP13013197A external-priority patent/JP3819531B2/ja
Priority to JP13013197A priority Critical patent/JP3819531B2/ja
Priority to TW087106189A priority patent/TW565739B/zh
Priority to TW092126682A priority patent/TWI229782B/zh
Priority to KR1019980017364A priority patent/KR100301354B1/ko
Priority to US09/080,530 priority patent/US6656659B1/en
Publication of JPH10319595A publication Critical patent/JPH10319595A/ja
Publication of JPH10319595A5 publication Critical patent/JPH10319595A5/ja
Publication of JP3819531B2 publication Critical patent/JP3819531B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP13013197A 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法 Expired - Lifetime JP3819531B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13013197A JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法
TW087106189A TW565739B (en) 1997-05-20 1998-04-22 Resist composition suitable for short wavelength exposure and resist pattern forming method
TW092126682A TWI229782B (en) 1997-05-20 1998-04-22 Resist composition suitable for short wavelength exposure and resist pattern forming method
KR1019980017364A KR100301354B1 (ko) 1997-05-20 1998-05-14 레지스트조성물및레지스트패턴형성방법
US09/080,530 US6656659B1 (en) 1997-05-20 1998-05-18 Resist composition suitable for short wavelength exposure and resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13013197A JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法

Publications (3)

Publication Number Publication Date
JPH10319595A JPH10319595A (ja) 1998-12-04
JPH10319595A5 true JPH10319595A5 (enExample) 2005-01-20
JP3819531B2 JP3819531B2 (ja) 2006-09-13

Family

ID=15026701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13013197A Expired - Lifetime JP3819531B2 (ja) 1997-05-20 1997-05-20 レジスト組成物及びレジストパターン形成方法

Country Status (4)

Country Link
US (1) US6656659B1 (enExample)
JP (1) JP3819531B2 (enExample)
KR (1) KR100301354B1 (enExample)
TW (2) TW565739B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
EP1041442B1 (en) 1999-03-31 2004-10-27 Sumitomo Chemical Company, Limited Chemical amplification type positive resist
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100533361B1 (ko) * 1999-08-23 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막 중합체 및 그의 제조방법
KR100729679B1 (ko) * 1999-11-02 2007-06-18 가부시끼가이샤 도시바 포토레지스트용 고분자 화합물 및 포토레지스트용 수지조성물
JP4282185B2 (ja) 1999-11-02 2009-06-17 株式会社東芝 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
JP4576737B2 (ja) 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100360412B1 (ko) * 2000-07-11 2002-11-13 삼성전자 주식회사 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
TWI291953B (enExample) 2001-10-23 2008-01-01 Mitsubishi Rayon Co
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
KR100821440B1 (ko) 2003-01-31 2008-04-10 미츠비시 레이온 가부시키가이샤 레지스트용 중합체 및 레지스트 조성물
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
TWI291473B (en) 2004-06-08 2007-12-21 Tokyo Ohka Kogyo Co Ltd Polymer, positive resist composition, and method for forming resist pattern
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US8476401B2 (en) 2004-09-10 2013-07-02 Mitsubishi Rayon Co., Ltd. Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon
DE102004047249A1 (de) * 2004-09-24 2006-04-06 Infineon Technologies Ag Lithographieverfahren zur Herstellung hochaufgelöster Fotoresiststrukturen
JP5692060B2 (ja) 2009-03-03 2015-04-01 三菱瓦斯化学株式会社 アダマンタン誘導体、その製造方法およびそれを原料とする重合体、並びに樹脂組成物
JP5793867B2 (ja) 2009-07-07 2015-10-14 三菱レイヨン株式会社 重合体の製造方法
JP5845578B2 (ja) 2009-07-07 2016-01-20 三菱レイヨン株式会社 リソグラフィー用共重合体の評価方法
WO2011014020A2 (ko) * 2009-07-30 2011-02-03 주식회사 동진쎄미켐 자가정렬 이중 패턴 형성용 포토레지스트 조성물
KR20120120222A (ko) 2010-01-14 2012-11-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 비시클로헥산 유도체 화합물 및 그 제조 방법
JP5660483B2 (ja) * 2010-03-12 2015-01-28 国立大学法人東北大学 レジスト用重合体組成物、レジスト組成物、およびパターンが形成された基板の製造方法
US9477151B2 (en) 2013-04-23 2016-10-25 Mitsubishi Gas Chemical Company, Inc. Alicyclic ester compound, and (meth)acrylic copolymer and photosensitive resin composition containing same
JP6287552B2 (ja) 2013-06-14 2018-03-07 三菱ケミカル株式会社 レジスト用共重合体、およびレジスト用組成物
US9951163B2 (en) 2014-01-31 2018-04-24 Mitsubishi Gas Chemical Company, Inc. (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same
EP3106454A4 (en) 2014-02-14 2017-08-30 Mitsubishi Gas Chemical Company, Inc. Method for producing novel alicyclic ester compound, novel alicyclic ester compound, (meth)acrylic copolymer produced by polymerizing said compound, and photosensitive resin composition using said copolymer
US10005714B2 (en) 2014-02-14 2018-06-26 Mitsubishi Gas Chemical Company, Inc. (Meth)acrylic acid ester compound and production method therefor
KR102729938B1 (ko) * 2020-04-01 2024-11-13 가부시키가이샤 닛폰 쇼쿠바이 N-치환 말레이미드계 중합체, 및 그 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法

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