TWI455948B - 聚合體的製造方法、微影用聚合體、光阻組成物及基板的製造方法 - Google Patents

聚合體的製造方法、微影用聚合體、光阻組成物及基板的製造方法 Download PDF

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TWI455948B
TWI455948B TW99122354A TW99122354A TWI455948B TW I455948 B TWI455948 B TW I455948B TW 99122354 A TW99122354 A TW 99122354A TW 99122354 A TW99122354 A TW 99122354A TW I455948 B TWI455948 B TW I455948B
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Atsushi Yasuda
Tomoya Oshikiri
Daisuke Matsumoto
Keisuke Katou
Shinichi Maeda
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Claims (8)

  1. 一種聚合方法,其是一邊向反應器內滴加單體及聚合起始劑,一邊於上述反應器內將兩種以上的單體α1 ~αn (其中,n表示大於等於2的整數)聚合,而獲得包含構成單元α'1 ~α'n (其中,α'1 ~α'n 表示分別由單體α1 ~αn 導出的構成單元)的聚合體(P),並且上述聚合方法包括下述(I)及(II)的步驟:(I)在向上述反應器內滴加上述聚合起始劑之前或者與開始滴加上述聚合起始劑的同時,向上述反應器內供給以根據各單體的反應性比而自聚合初期於穩定狀態下聚合的比例的第1組成含有上述單體α1 ~αn 的第1溶液;(II)當表示欲獲得的聚合體(P)中的構成單元α'1 ~α'n 的含有比率的目標組成(單位:莫耳百分比)為α'1 :α'2 :......:α'n 時,於向上述反應器內開始供給上述第1溶液後或者與開始供給上述第1溶液的同時,供給以與上述目標組成相同的組成含有上述單體α1 ~αn 的第2溶液;當將自上述聚合起始劑的滴加開始至上述第2溶液的滴加結束為止作為基準時間時,在經過上述基準時間的20%以前結束上述第1溶液的供給;當將上述聚合起始劑的總供給量除以上述基準時間而得的值作為平均供給速度時,將自上述基準時間的0%至j%(j為5~20)為止的期間作為以高於上述平均供給速度的速度滴加聚合起始劑的高速供給期間,於上述高速供給期間將上述聚合起始劑的總供給量中的30~90wt% 供給至上述反應器內。
  2. 如申請專利範圍第1項所述之聚合方法,其中上述第1組成是藉由下述(i)~(iii)的流程而求出:(i)首先,將含有單體組成與目標組成α'1 :α'2 :......:α'n 相同的單體混合物100重量份、聚合起始劑及溶劑的滴加溶液,以固定的滴加速度滴加至僅加入有溶劑的反應器內,於自滴加開始的經過時間為t1 、t2 、t3 ......tm 時,分別求出殘存於反應器內的單體α1 ~αn 的組成(單位:莫耳百分比)M1 :M2 :......:Mn ,與自t1 至t2 之間、自t2 至t3 之間、自tm 至tm+1 之間各自生成的聚合體中的構成單元α'1 ~α'n 的比率(單位:莫耳百分比)P1 :P2 :......:Pn ;(ii)找到上述P1 :P2 :......:Pn 最接近目標組成α'1 :α'2 :......:α'n 的時間帶「自tm 至tm+1 之間(m為大於等於1的整數)」;(iii)根據下述式,由上述「自tm 至tm+1 之間」的P1 :P2 :......:Pn 的值、及經過時間tm 的M1 :M2 :......:Mn 的值來求出係數F1 、F2 、......Fn ;F1 =P1 /M1 、F2 =P2 /M2 、......Fn =Pn /Mn ;此外,若將藉由上述(i)~(iii)的流程求出的係數表示為F1 、F2 、......Fn ,則α1 =α'1 /F1 、α2 =α'2 /F2 、......αn =α'n /Fn 。
  3. 如申請專利範圍第1項所述之聚合方法,其包括:一邊於反應器內滴加單體及聚合起始劑,一邊於上述反應器內將兩種以上的單體α1 ~αn (其中,n表示大於等於2的整數)聚合,從而獲得包含構成單元α'1 ~α'n (其中, α'1 ~α'n 表示分別由單體α1 ~αn 導出的構成單元)的聚合體(P)之聚合步驟;於向上述反應器內滴加上述聚合起始劑之前或者與開始滴加上述聚合起始劑的同時,向上述反應器內開始供給以第1組成含有上述單體α1 ~αn 的第1溶液;於向上述反應器內開始供給上述第1溶液之後或者與開始供給上述第1溶液的同時,向上述反應器內開始滴加以第2組成含有上述單體α1 ~αn 的第2溶液;上述第2溶液的滴加開始是在與開始滴加上述聚合起始劑的同時或者在開始滴加上述聚合起始劑之後,當表示所欲獲得的聚合體(P)的構成單元α'1 ~α'n 的含有比率的目標組成(單位:莫耳百分比)為α'1 :α'2 :......:α'n 時,上述第2組成與上述目標組成相同,若將上述第1組成(單位:莫耳百分比)表示為α1 :α2 :......:αn ,且將藉由下述(i)~(iii)的流程求出的係數表示為F1 、F2 、......Fn ,則α1 =α'1 /F1 、α2 =α'2 /F2 、......αn =α'n /Fn ,當將自上述聚合起始劑的滴加開始至上述第2溶液的滴加結束為止作為基準時間時,在經過上述基準時間的20%以前結束上述第1溶液的供給;當將上述聚合起始劑的總供給量除以上述基準時間而得的值作為平均供給速度時,將自上述基準時間的0%至j%(j為5~20)為止的期間作為以高於上述平均供給速度的速度滴加聚合起始劑的高速供給期間,於上述高速供給期間將上述聚合起始劑的總供給量中的30~90wt% 供給至上述反應器內;(i)首先,將含有單體組成與目標組成α'1 :α'2 :......:α'n 相同的單體混合物100重量份、聚合起始劑及溶劑的滴加溶液,以固定的滴加速度滴加至僅加入有溶劑的反應器內,於自滴加開始的經過時間為t1 、t2 、t3 ......時,分別求出殘存於反應器內的單體α1 ~αn 的組成(單位:mol%)M1 :M2 :......:Mn ,與自t1 至t2 之間、自t2 至t3 之間、......各自生成的聚合體中的構成單元α'1 ~α'n 的比率(單位:mol%)P1 :P2 :......:Pn ;(ii)找到上述P1 :P2 :......:Pn 最接近目標組成α'1 :α'2 :......:α'n 的時間帶「自tm 至tm+1 之間(m為大於等於1的整數)」;(iii)根據下述式,由上述「自tm 至tm+1 之間」的P1 :P2 :......:Pn 的值、及經過時間tm 的M1 :M2 :......:Mn 的值來求出係數F1 、F2 :......Fn ;F1 =P1 /M1 、F2 =P2 /M2 、......Fn =Pn /Mn 。
  4. 一種微影用共聚體,其是藉由如申請專利範圍第1項至第3項中任一項所述之聚合方法所獲得。
  5. 一種微影用共聚體,其是藉由如申請專利範圍第1項至第3項中任一項所述之聚合方法所獲得的微影用共聚體,其中將藉由凝膠滲透層析法(GPC)所獲得的溶析曲線中顯示上述共聚體的波峰的溶離液,按溶析順序以體積達到均等的方式分割為8個溶離份,所得溶離份中,關於源自各單體的構成單元中的任一者,最先溶析出的溶離份 中所含的共聚體的單體組成與共聚體整體的單體組成的差均為大於等於-3mol%、小於等於+3mol%。
  6. 如申請專利範圍第4項或第5項所述之微影用共聚體,其是用於光阻。
  7. 一種光阻組成物,其含有如申請專利範圍第6項所述之微影用共聚體、及藉由照射活性光線或放射線會產生酸的化合物。
  8. 一種形成有圖案的基板的製造方法,其包括以下步驟:將如申請專利範圍第7項所述之光阻組成物塗佈於基板的被加工面上而形成光阻膜;對上述光阻膜進行曝光;以及使用顯影液對經曝光的光阻膜進行顯影。
TW99122354A 2009-07-07 2010-07-07 聚合體的製造方法、微影用聚合體、光阻組成物及基板的製造方法 TWI455948B (zh)

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JP5942562B2 (ja) * 2012-04-18 2016-06-29 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、及びパターンが形成された基板の製造方法
JP5942564B2 (ja) * 2012-04-18 2016-06-29 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、及びパターンが形成された基板の製造方法
JP2014218570A (ja) * 2013-05-08 2014-11-20 三菱レイヨン株式会社 半導体リソグラフィー用重合体の製造方法
JP6488596B2 (ja) * 2013-09-03 2019-03-27 三菱ケミカル株式会社 リソグラフィー用共重合体の製造方法、レジスト組成物の製造方法及びパターンが形成された基板の製造方法
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