KR0132859B1 - 반도체장치의 커패시터 제조방법 - Google Patents

반도체장치의 커패시터 제조방법

Info

Publication number
KR0132859B1
KR0132859B1 KR1019930025136A KR930025136A KR0132859B1 KR 0132859 B1 KR0132859 B1 KR 0132859B1 KR 1019930025136 A KR1019930025136 A KR 1019930025136A KR 930025136 A KR930025136 A KR 930025136A KR 0132859 B1 KR0132859 B1 KR 0132859B1
Authority
KR
South Korea
Prior art keywords
conductive layer
pattern
forming
layer
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930025136A
Other languages
English (en)
Korean (ko)
Other versions
KR950015770A (ko
Inventor
박원모
이종진
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019930025136A priority Critical patent/KR0132859B1/ko
Priority to TW083110727A priority patent/TW279271B/zh
Priority to US08/347,246 priority patent/US5443993A/en
Priority to JP31587094A priority patent/JP3483326B2/ja
Publication of KR950015770A publication Critical patent/KR950015770A/ko
Priority to US08/547,901 priority patent/US5700709A/en
Application granted granted Critical
Publication of KR0132859B1 publication Critical patent/KR0132859B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
KR1019930025136A 1993-11-24 1993-11-24 반도체장치의 커패시터 제조방법 Expired - Fee Related KR0132859B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019930025136A KR0132859B1 (ko) 1993-11-24 1993-11-24 반도체장치의 커패시터 제조방법
TW083110727A TW279271B (enExample) 1993-11-24 1994-11-18
US08/347,246 US5443993A (en) 1993-11-24 1994-11-23 Method for manufacturing a capacitor for a semiconductor device
JP31587094A JP3483326B2 (ja) 1993-11-24 1994-11-24 半導体装置のキャパシタ製造方法
US08/547,901 US5700709A (en) 1993-11-24 1995-10-25 Method for manufacturing a capacitor for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930025136A KR0132859B1 (ko) 1993-11-24 1993-11-24 반도체장치의 커패시터 제조방법

Publications (2)

Publication Number Publication Date
KR950015770A KR950015770A (ko) 1995-06-17
KR0132859B1 true KR0132859B1 (ko) 1998-04-16

Family

ID=19368841

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930025136A Expired - Fee Related KR0132859B1 (ko) 1993-11-24 1993-11-24 반도체장치의 커패시터 제조방법

Country Status (4)

Country Link
US (2) US5443993A (enExample)
JP (1) JP3483326B2 (enExample)
KR (1) KR0132859B1 (enExample)
TW (1) TW279271B (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688726A (en) * 1994-08-03 1997-11-18 Hyundai Electronics Industries Co., Ltd. Method for fabricating capacitors of semiconductor device having cylindrical storage electrodes
US5573963A (en) * 1995-05-03 1996-11-12 Vanguard International Semiconductor Corporation Method of forming self-aligned twin tub CMOS devices
JP2751952B2 (ja) * 1995-11-10 1998-05-18 日本電気株式会社 半導体装置の製造方法
JP3062067B2 (ja) * 1995-12-18 2000-07-10 日本電気株式会社 半導体装置及びその製造方法
US5543345A (en) * 1995-12-27 1996-08-06 Vanguard International Semiconductor Corp. Method for fabricating crown capacitors for a dram cell
KR0186069B1 (ko) * 1995-12-28 1999-03-20 문정환 스택형 디램 셀의 캐패시터 제조방법
US5656532A (en) * 1996-01-11 1997-08-12 Vanguard International Semiconductor Corporation Method for fabricating a coaxial capacitor of a semiconductor device
US5733808A (en) * 1996-01-16 1998-03-31 Vanguard International Semiconductor Corporation Method for fabricating a cylindrical capacitor for a semiconductor device
US5552334A (en) * 1996-01-22 1996-09-03 Vanguard International Semiconductor Company Method for fabricating a Y-shaped capacitor in a DRAM cell
US5856220A (en) * 1996-02-08 1999-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a double wall tub shaped capacitor
JP3063606B2 (ja) * 1996-02-13 2000-07-12 日本電気株式会社 半導体装置の製造方法
JP2917912B2 (ja) * 1996-06-07 1999-07-12 日本電気株式会社 半導体記憶装置およびその製造方法
US5807775A (en) * 1996-06-24 1998-09-15 Vanguard International Semiconductor Corporation Method for forming a double walled cylindrical capacitor for a DRAM
TW312831B (en) 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(3)
TW297948B (en) * 1996-08-16 1997-02-11 United Microelectronics Corp Memory cell structure of DRAM
US5739060A (en) * 1996-08-16 1998-04-14 United Microelecrtronics Corporation Method of fabricating a capacitor structure for a semiconductor memory device
TW351846B (en) * 1996-08-16 1999-02-01 United Microelectronics Corp Method for fabricating memory cell for DRAM
TW302524B (en) * 1996-08-16 1997-04-11 United Microelectronics Corp Memory cell structure of dynamic random access memory and manufacturing method thereof
TW312829B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Semiconductor memory device with capacitor(6)
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor
TW306036B (en) * 1996-08-16 1997-05-21 United Microelectronics Corp Semiconductor memory device with capacitor (part 2)
TW366592B (en) * 1996-08-16 1999-08-11 United Microelectronics Corp DRAM memory and the manufacturing method for the memory cells
TW308729B (en) * 1996-08-16 1997-06-21 United Microelectronics Corp Semiconductor memory device with capacitor (3)
TW308727B (en) * 1996-08-16 1997-06-21 United Microelectronics Corp Semiconductor memory device with capacitor (4)
US5759890A (en) * 1996-08-16 1998-06-02 United Microelectronics Corporation Method for fabricating a tree-type capacitor structure for a semiconductor memory device
TW427012B (en) * 1996-08-16 2001-03-21 United Microelectronics Corp The manufacturing method of double-combined capacitor DRAM cells
TW304288B (en) * 1996-08-16 1997-05-01 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor
TW312828B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(5)
TW304290B (en) * 1996-08-16 1997-05-01 United Microelectronics Corp The manufacturing method for semiconductor memory device with capacitor
US5796138A (en) * 1996-08-16 1998-08-18 United Microelectronics Corporation Semiconductor memory device having a tree type capacitor
TW306064B (en) * 1996-08-16 1997-05-21 United Microelectronics Corp Semiconductor memory device with capacitor (part 6)
US5688713A (en) * 1996-08-26 1997-11-18 Vanguard International Semiconductor Corporation Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers
US5933742A (en) * 1996-09-06 1999-08-03 Powerchip Semiconductor Corp. Multi-crown capacitor for high density DRAMS
KR100282413B1 (ko) * 1996-10-24 2001-03-02 김영환 아산화질소 가스를 이용한 박막 형성 방법
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
KR100244281B1 (ko) * 1996-11-27 2000-02-01 김영환 반도체 소자의 커피시터 제조방법
US5668039A (en) * 1996-12-05 1997-09-16 Vanguard International Semiconductor Corp. Method for forming crown-shape capacitor node with tapered etching
US5854105A (en) * 1997-11-05 1998-12-29 Vanguard International Semiconductor Corporation Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
TW427014B (en) * 1997-12-24 2001-03-21 United Microelectronics Corp The manufacturing method of the capacitors of DRAM
TW392282B (en) * 1998-01-20 2000-06-01 Nanya Technology Corp Manufacturing method for cylindrical capacitor
GB2341271B (en) * 1998-09-01 2001-04-18 United Semiconductor Corp Method of fabricating capacitor
KR100532393B1 (ko) * 1998-09-03 2006-04-21 삼성전자주식회사 다층의 절연막을 동시에 식각하는 공정을 포함하는 반도체 메모리장치의 제조방법
US6121108A (en) * 1998-10-28 2000-09-19 United Microelectroincs Corp. Method for fabricating a capacitor in a dynamic random access memory
US6403416B1 (en) * 1999-01-07 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)
US6294436B1 (en) * 1999-08-16 2001-09-25 Infineon Technologies Ag Method for fabrication of enlarged stacked capacitors using isotropic etching
US20080113483A1 (en) * 2006-11-15 2008-05-15 Micron Technology, Inc. Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures
US20140167220A1 (en) * 2012-12-14 2014-06-19 Spansion Llc Three dimensional capacitor
KR102101407B1 (ko) * 2013-03-14 2020-04-16 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
US5217914A (en) * 1990-04-10 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor integration circuit with stacked capacitor cells
KR930009583B1 (ko) * 1990-11-29 1993-10-07 삼성전자 주식회사 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법
US5061650A (en) * 1991-01-17 1991-10-29 Micron Technology, Inc. Method for formation of a stacked capacitor
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure
TW243541B (enExample) * 1991-08-31 1995-03-21 Samsung Electronics Co Ltd
US5266512A (en) * 1991-10-23 1993-11-30 Motorola, Inc. Method for forming a nested surface capacitor
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
KR960008865B1 (en) * 1992-07-15 1996-07-05 Samsung Electronics Co Ltd Method for manufacturing a capacitor in semiconductor memory device

Also Published As

Publication number Publication date
TW279271B (enExample) 1996-06-21
KR950015770A (ko) 1995-06-17
JP3483326B2 (ja) 2004-01-06
US5700709A (en) 1997-12-23
JPH07193143A (ja) 1995-07-28
US5443993A (en) 1995-08-22

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