GB2341271B - Method of fabricating capacitor - Google Patents
Method of fabricating capacitorInfo
- Publication number
- GB2341271B GB2341271B GB9819061A GB9819061A GB2341271B GB 2341271 B GB2341271 B GB 2341271B GB 9819061 A GB9819061 A GB 9819061A GB 9819061 A GB9819061 A GB 9819061A GB 2341271 B GB2341271 B GB 2341271B
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabricating capacitor
- fabricating
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9819061A GB2341271B (en) | 1998-09-01 | 1998-09-01 | Method of fabricating capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9819061A GB2341271B (en) | 1998-09-01 | 1998-09-01 | Method of fabricating capacitor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9819061D0 GB9819061D0 (en) | 1998-10-28 |
GB2341271A GB2341271A (en) | 2000-03-08 |
GB2341271B true GB2341271B (en) | 2001-04-18 |
Family
ID=10838179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9819061A Expired - Fee Related GB2341271B (en) | 1998-09-01 | 1998-09-01 | Method of fabricating capacitor |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2341271B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3337067B2 (en) * | 1999-05-07 | 2002-10-21 | 日本電気株式会社 | Manufacturing method of cylindrical capacitor lower electrode |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0448374A1 (en) * | 1990-03-20 | 1991-09-25 | Nec Corporation | Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface |
EP0595360A1 (en) * | 1992-10-30 | 1994-05-04 | Nec Corporation | Method of manufacturing a semiconductor device having a cylindrical electrode |
US5399518A (en) * | 1992-07-15 | 1995-03-21 | Samsung Electronics Co., Ltd. | Method for manufacturing a multiple walled capacitor of a semiconductor device |
US5443993A (en) * | 1993-11-24 | 1995-08-22 | Samsung Electronics Co., Ltd. | Method for manufacturing a capacitor for a semiconductor device |
GB2314976A (en) * | 1996-07-04 | 1998-01-14 | Nec Corp | Stacked capacitors for DRAMs |
US5733808A (en) * | 1996-01-16 | 1998-03-31 | Vanguard International Semiconductor Corporation | Method for fabricating a cylindrical capacitor for a semiconductor device |
-
1998
- 1998-09-01 GB GB9819061A patent/GB2341271B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0448374A1 (en) * | 1990-03-20 | 1991-09-25 | Nec Corporation | Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface |
US5399518A (en) * | 1992-07-15 | 1995-03-21 | Samsung Electronics Co., Ltd. | Method for manufacturing a multiple walled capacitor of a semiconductor device |
EP0595360A1 (en) * | 1992-10-30 | 1994-05-04 | Nec Corporation | Method of manufacturing a semiconductor device having a cylindrical electrode |
US5443993A (en) * | 1993-11-24 | 1995-08-22 | Samsung Electronics Co., Ltd. | Method for manufacturing a capacitor for a semiconductor device |
US5733808A (en) * | 1996-01-16 | 1998-03-31 | Vanguard International Semiconductor Corporation | Method for fabricating a cylindrical capacitor for a semiconductor device |
GB2314976A (en) * | 1996-07-04 | 1998-01-14 | Nec Corp | Stacked capacitors for DRAMs |
Also Published As
Publication number | Publication date |
---|---|
GB9819061D0 (en) | 1998-10-28 |
GB2341271A (en) | 2000-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090901 |