GB2341271B - Method of fabricating capacitor - Google Patents

Method of fabricating capacitor

Info

Publication number
GB2341271B
GB2341271B GB9819061A GB9819061A GB2341271B GB 2341271 B GB2341271 B GB 2341271B GB 9819061 A GB9819061 A GB 9819061A GB 9819061 A GB9819061 A GB 9819061A GB 2341271 B GB2341271 B GB 2341271B
Authority
GB
United Kingdom
Prior art keywords
fabricating capacitor
fabricating
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9819061A
Other versions
GB9819061D0 (en
GB2341271A (en
Inventor
Gary Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
United Semiconductor Corp
Original Assignee
United Microelectronics Corp
United Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp, United Semiconductor Corp filed Critical United Microelectronics Corp
Priority to GB9819061A priority Critical patent/GB2341271B/en
Publication of GB9819061D0 publication Critical patent/GB9819061D0/en
Publication of GB2341271A publication Critical patent/GB2341271A/en
Application granted granted Critical
Publication of GB2341271B publication Critical patent/GB2341271B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9819061A 1998-09-01 1998-09-01 Method of fabricating capacitor Expired - Fee Related GB2341271B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9819061A GB2341271B (en) 1998-09-01 1998-09-01 Method of fabricating capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9819061A GB2341271B (en) 1998-09-01 1998-09-01 Method of fabricating capacitor

Publications (3)

Publication Number Publication Date
GB9819061D0 GB9819061D0 (en) 1998-10-28
GB2341271A GB2341271A (en) 2000-03-08
GB2341271B true GB2341271B (en) 2001-04-18

Family

ID=10838179

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9819061A Expired - Fee Related GB2341271B (en) 1998-09-01 1998-09-01 Method of fabricating capacitor

Country Status (1)

Country Link
GB (1) GB2341271B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3337067B2 (en) * 1999-05-07 2002-10-21 日本電気株式会社 Manufacturing method of cylindrical capacitor lower electrode

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448374A1 (en) * 1990-03-20 1991-09-25 Nec Corporation Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
EP0595360A1 (en) * 1992-10-30 1994-05-04 Nec Corporation Method of manufacturing a semiconductor device having a cylindrical electrode
US5399518A (en) * 1992-07-15 1995-03-21 Samsung Electronics Co., Ltd. Method for manufacturing a multiple walled capacitor of a semiconductor device
US5443993A (en) * 1993-11-24 1995-08-22 Samsung Electronics Co., Ltd. Method for manufacturing a capacitor for a semiconductor device
GB2314976A (en) * 1996-07-04 1998-01-14 Nec Corp Stacked capacitors for DRAMs
US5733808A (en) * 1996-01-16 1998-03-31 Vanguard International Semiconductor Corporation Method for fabricating a cylindrical capacitor for a semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448374A1 (en) * 1990-03-20 1991-09-25 Nec Corporation Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
US5399518A (en) * 1992-07-15 1995-03-21 Samsung Electronics Co., Ltd. Method for manufacturing a multiple walled capacitor of a semiconductor device
EP0595360A1 (en) * 1992-10-30 1994-05-04 Nec Corporation Method of manufacturing a semiconductor device having a cylindrical electrode
US5443993A (en) * 1993-11-24 1995-08-22 Samsung Electronics Co., Ltd. Method for manufacturing a capacitor for a semiconductor device
US5733808A (en) * 1996-01-16 1998-03-31 Vanguard International Semiconductor Corporation Method for fabricating a cylindrical capacitor for a semiconductor device
GB2314976A (en) * 1996-07-04 1998-01-14 Nec Corp Stacked capacitors for DRAMs

Also Published As

Publication number Publication date
GB9819061D0 (en) 1998-10-28
GB2341271A (en) 2000-03-08

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090901