GB2337159B - Method for manufacturing capacitor's lower electrode - Google Patents

Method for manufacturing capacitor's lower electrode

Info

Publication number
GB2337159B
GB2337159B GB9809770A GB9809770A GB2337159B GB 2337159 B GB2337159 B GB 2337159B GB 9809770 A GB9809770 A GB 9809770A GB 9809770 A GB9809770 A GB 9809770A GB 2337159 B GB2337159 B GB 2337159B
Authority
GB
United Kingdom
Prior art keywords
lower electrode
manufacturing capacitor
capacitor
manufacturing
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9809770A
Other versions
GB2337159A (en
GB9809770D0 (en
Inventor
Jhy-Jyi Sze
Hsiu-Wen Huang
Gary Hong
Anchor Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
United Semiconductor Corp
Original Assignee
United Microelectronics Corp
United Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW087101622A external-priority patent/TW374242B/en
Application filed by United Microelectronics Corp, United Semiconductor Corp filed Critical United Microelectronics Corp
Priority to GB9809770A priority Critical patent/GB2337159B/en
Priority to DE19823253A priority patent/DE19823253C1/en
Priority to FR9806657A priority patent/FR2774804B1/en
Priority to JP10146282A priority patent/JP2936326B1/en
Publication of GB9809770D0 publication Critical patent/GB9809770D0/en
Publication of GB2337159A publication Critical patent/GB2337159A/en
Application granted granted Critical
Publication of GB2337159B publication Critical patent/GB2337159B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB9809770A 1998-02-07 1998-05-07 Method for manufacturing capacitor's lower electrode Expired - Fee Related GB2337159B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB9809770A GB2337159B (en) 1998-02-07 1998-05-07 Method for manufacturing capacitor's lower electrode
DE19823253A DE19823253C1 (en) 1998-02-07 1998-05-26 Capacitor lower electrode is produced especially for a DRAM capacitor
FR9806657A FR2774804B1 (en) 1998-02-07 1998-05-27 METHOD FOR FORMING THE LOWER ELECTRODE OF A CAPACITOR
JP10146282A JP2936326B1 (en) 1998-02-07 1998-05-27 Method of manufacturing lower electrode of capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW087101622A TW374242B (en) 1998-02-07 1998-02-07 Method for manufacturing an underside electrode of a capacitor
GB9809770A GB2337159B (en) 1998-02-07 1998-05-07 Method for manufacturing capacitor's lower electrode

Publications (3)

Publication Number Publication Date
GB9809770D0 GB9809770D0 (en) 1998-07-08
GB2337159A GB2337159A (en) 1999-11-10
GB2337159B true GB2337159B (en) 2000-12-06

Family

ID=26313614

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9809770A Expired - Fee Related GB2337159B (en) 1998-02-07 1998-05-07 Method for manufacturing capacitor's lower electrode

Country Status (4)

Country Link
JP (1) JP2936326B1 (en)
DE (1) DE19823253C1 (en)
FR (1) FR2774804B1 (en)
GB (1) GB2337159B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3344482B2 (en) * 1999-10-01 2002-11-11 日本電気株式会社 Semiconductor memory device and method of manufacturing the same
JP4731025B2 (en) * 2001-02-07 2011-07-20 Ｏｋｉセミコンダクタ株式会社 Cylinder type capacitor and method of manufacturing cylinder type capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622889A (en) * 1995-01-26 1997-04-22 Samsung Electronics Co., Ltd. High capacitance capacitor manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
KR970054170A (en) * 1995-12-25 1997-07-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622889A (en) * 1995-01-26 1997-04-22 Samsung Electronics Co., Ltd. High capacitance capacitor manufacturing method

Also Published As

Publication number Publication date
DE19823253C1 (en) 1999-07-15
JP2936326B1 (en) 1999-08-23
JPH11238848A (en) 1999-08-31
FR2774804A1 (en) 1999-08-13
FR2774804B1 (en) 2000-08-11
GB2337159A (en) 1999-11-10
GB9809770D0 (en) 1998-07-08

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030507