GB2336714B - Method of fabricating capacitor - Google Patents

Method of fabricating capacitor

Info

Publication number
GB2336714B
GB2336714B GB9805951A GB9805951A GB2336714B GB 2336714 B GB2336714 B GB 2336714B GB 9805951 A GB9805951 A GB 9805951A GB 9805951 A GB9805951 A GB 9805951A GB 2336714 B GB2336714 B GB 2336714B
Authority
GB
United Kingdom
Prior art keywords
fabricating capacitor
fabricating
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9805951A
Other versions
GB2336714A (en
GB9805951D0 (en
Inventor
Gary Hong
Anchor Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Semiconductor Corp
Original Assignee
United Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW086119673A external-priority patent/TW427014B/en
Application filed by United Semiconductor Corp filed Critical United Semiconductor Corp
Priority to GB9805951A priority Critical patent/GB2336714B/en
Priority to DE19815158A priority patent/DE19815158A1/en
Priority to NL1008802A priority patent/NL1008802C2/en
Priority to FR9804376A priority patent/FR2772988B1/en
Publication of GB9805951D0 publication Critical patent/GB9805951D0/en
Publication of GB2336714A publication Critical patent/GB2336714A/en
Application granted granted Critical
Publication of GB2336714B publication Critical patent/GB2336714B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9805951A 1997-12-24 1998-03-19 Method of fabricating capacitor Expired - Fee Related GB2336714B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB9805951A GB2336714B (en) 1997-12-24 1998-03-19 Method of fabricating capacitor
DE19815158A DE19815158A1 (en) 1997-12-24 1998-04-03 Production of DRAM capacitor having increased surface area
NL1008802A NL1008802C2 (en) 1997-12-24 1998-04-03 Method of manufacturing a capacitor.
FR9804376A FR2772988B1 (en) 1997-12-24 1998-04-08 METHOD FOR MANUFACTURING A CAPACITOR IN A DYNAMIC RAM

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW086119673A TW427014B (en) 1997-12-24 1997-12-24 The manufacturing method of the capacitors of DRAM
GB9805951A GB2336714B (en) 1997-12-24 1998-03-19 Method of fabricating capacitor
NL1008802A NL1008802C2 (en) 1997-12-24 1998-04-03 Method of manufacturing a capacitor.

Publications (3)

Publication Number Publication Date
GB9805951D0 GB9805951D0 (en) 1998-05-20
GB2336714A GB2336714A (en) 1999-10-27
GB2336714B true GB2336714B (en) 2000-03-08

Family

ID=27269250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9805951A Expired - Fee Related GB2336714B (en) 1997-12-24 1998-03-19 Method of fabricating capacitor

Country Status (4)

Country Link
DE (1) DE19815158A1 (en)
FR (1) FR2772988B1 (en)
GB (1) GB2336714B (en)
NL (1) NL1008802C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330397A (en) * 1998-05-20 1999-11-30 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444653A (en) * 1993-04-26 1995-08-22 Sanyo Electric Co., Ltd. Semiconductor memory device with stack type memory cell
US5478768A (en) * 1992-08-03 1995-12-26 Nec Corporation Method of manufacturing a semiconductor memory device having improved hold characteristic of a storage capacitor
US5482886A (en) * 1993-08-30 1996-01-09 Hyundai Electronics Industries Co., Ltd. Method for fabricating dynamic random access memory capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1245495B (en) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp DYNAMIC RANDOM ACCESS MEMORY HAVING A STACKED TYPE CAPACITOR AND ITS MANUFACTURING PROCEDURE
US5484744A (en) * 1995-04-14 1996-01-16 United Microelectronics Corporation Method for fabricating a stacked capacitor for dynamic random access memory cell
JPH0964179A (en) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp Semiconductor device and its fabrication method
KR0186069B1 (en) * 1995-12-28 1999-03-20 문정환 Method of manufacturing capacitor of stacked dram cell
US5552334A (en) * 1996-01-22 1996-09-03 Vanguard International Semiconductor Company Method for fabricating a Y-shaped capacitor in a DRAM cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478768A (en) * 1992-08-03 1995-12-26 Nec Corporation Method of manufacturing a semiconductor memory device having improved hold characteristic of a storage capacitor
US5444653A (en) * 1993-04-26 1995-08-22 Sanyo Electric Co., Ltd. Semiconductor memory device with stack type memory cell
US5482886A (en) * 1993-08-30 1996-01-09 Hyundai Electronics Industries Co., Ltd. Method for fabricating dynamic random access memory capacitor

Also Published As

Publication number Publication date
NL1008802C2 (en) 1999-10-05
FR2772988B1 (en) 2001-05-25
FR2772988A1 (en) 1999-06-25
GB2336714A (en) 1999-10-27
GB9805951D0 (en) 1998-05-20
DE19815158A1 (en) 1999-07-08

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040319