JPWO2023223454A5 - - Google Patents
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- Publication number
- JPWO2023223454A5 JPWO2023223454A5 JP2022564749A JP2022564749A JPWO2023223454A5 JP WO2023223454 A5 JPWO2023223454 A5 JP WO2023223454A5 JP 2022564749 A JP2022564749 A JP 2022564749A JP 2022564749 A JP2022564749 A JP 2022564749A JP WO2023223454 A5 JPWO2023223454 A5 JP WO2023223454A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- dielectric film
- cover
- electrode
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims 4
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/020652 WO2023223454A1 (ja) | 2022-05-18 | 2022-05-18 | 活性ガス生成装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7297399B1 JP7297399B1 (ja) | 2023-06-26 |
| JPWO2023223454A1 JPWO2023223454A1 (https=) | 2023-11-23 |
| JPWO2023223454A5 true JPWO2023223454A5 (https=) | 2024-04-25 |
Family
ID=86900451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022564749A Active JP7297399B1 (ja) | 2022-05-18 | 2022-05-18 | 活性ガス生成装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12424418B2 (https=) |
| EP (1) | EP4340548B1 (https=) |
| JP (1) | JP7297399B1 (https=) |
| KR (1) | KR102805775B1 (https=) |
| CN (1) | CN117426143A (https=) |
| TW (1) | TWI841245B (https=) |
| WO (1) | WO2023223454A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114916255B (zh) * | 2020-12-07 | 2025-09-23 | 株式会社Tmeic | 活性气体生成装置 |
| EP4340548B1 (en) * | 2022-05-18 | 2025-10-15 | TMEIC Corporation | Active-gas-generating apparatus |
| WO2024084640A1 (ja) * | 2022-10-20 | 2024-04-25 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| KR20250002602A (ko) * | 2023-05-01 | 2025-01-07 | 가부시키가이샤 티마이크 | 활성 가스 생성 장치 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
| US5982100A (en) * | 1997-07-28 | 1999-11-09 | Pars, Inc. | Inductively coupled plasma reactor |
| US9490106B2 (en) * | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
| JP6239483B2 (ja) * | 2014-10-29 | 2017-11-29 | 東芝三菱電機産業システム株式会社 | 窒素ラジカル生成システム |
| US10573496B2 (en) * | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| CN104812154A (zh) * | 2015-04-22 | 2015-07-29 | 西安交通大学 | 一种三电极介质阻挡放电等离子体发生装置 |
| US10504754B2 (en) * | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) * | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| WO2018104988A1 (ja) * | 2016-12-05 | 2018-06-14 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| WO2019049230A1 (ja) * | 2017-09-06 | 2019-03-14 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| US10854426B2 (en) * | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| WO2019138456A1 (ja) * | 2018-01-10 | 2019-07-18 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| US10593560B2 (en) * | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| JP2019160714A (ja) * | 2018-03-16 | 2019-09-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US11532458B2 (en) * | 2018-05-30 | 2022-12-20 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation apparatus |
| KR102510329B1 (ko) * | 2018-06-25 | 2023-03-17 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 및 성막 처리 장치 |
| US10892198B2 (en) * | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| JP6844937B2 (ja) * | 2019-02-13 | 2021-03-17 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| CN113170567B (zh) * | 2019-11-12 | 2023-11-28 | 东芝三菱电机产业系统株式会社 | 活性气体生成装置 |
| US11839014B2 (en) * | 2019-11-27 | 2023-12-05 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generating apparatus |
| US12295089B2 (en) * | 2020-02-27 | 2025-05-06 | Tmeic Corporation | Active gas generation apparatus |
| JP7351245B2 (ja) * | 2020-03-13 | 2023-09-27 | ウシオ電機株式会社 | 誘電体バリア式プラズマ発生装置、及び、誘電体バリア式プラズマ発生装置のプラズマ放電開始方法 |
| US12512304B2 (en) * | 2020-07-23 | 2025-12-30 | Applied Materials, Inc. | Plasma source for semiconductor processing |
| JP2022049503A (ja) * | 2020-09-16 | 2022-03-29 | 株式会社東芝 | 誘電体バリア放電電極及び誘電体バリア放電装置 |
| KR102606837B1 (ko) * | 2021-11-02 | 2023-11-29 | 피에스케이 주식회사 | 상부 전극 유닛, 그리고 이를 포함하는 기판 처리 장치 |
| US12080516B2 (en) * | 2021-11-23 | 2024-09-03 | Applied Materials, Inc. | High density plasma enhanced process chamber |
| EP4340548B1 (en) * | 2022-05-18 | 2025-10-15 | TMEIC Corporation | Active-gas-generating apparatus |
| WO2024084640A1 (ja) * | 2022-10-20 | 2024-04-25 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
-
2022
- 2022-05-18 EP EP22942659.8A patent/EP4340548B1/en active Active
- 2022-05-18 KR KR1020237040733A patent/KR102805775B1/ko active Active
- 2022-05-18 US US18/570,654 patent/US12424418B2/en active Active
- 2022-05-18 WO PCT/JP2022/020652 patent/WO2023223454A1/ja not_active Ceased
- 2022-05-18 JP JP2022564749A patent/JP7297399B1/ja active Active
- 2022-05-18 CN CN202280037972.0A patent/CN117426143A/zh active Pending
-
2023
- 2023-02-16 TW TW112105618A patent/TWI841245B/zh active
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