JPWO2023223454A5 - - Google Patents

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Publication number
JPWO2023223454A5
JPWO2023223454A5 JP2022564749A JP2022564749A JPWO2023223454A5 JP WO2023223454 A5 JPWO2023223454 A5 JP WO2023223454A5 JP 2022564749 A JP2022564749 A JP 2022564749A JP 2022564749 A JP2022564749 A JP 2022564749A JP WO2023223454 A5 JPWO2023223454 A5 JP WO2023223454A5
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JP
Japan
Prior art keywords
dielectric
dielectric film
cover
electrode
hole
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JP2022564749A
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English (en)
Japanese (ja)
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JPWO2023223454A1 (https=
JP7297399B1 (ja
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Priority claimed from PCT/JP2022/020652 external-priority patent/WO2023223454A1/ja
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Publication of JPWO2023223454A1 publication Critical patent/JPWO2023223454A1/ja
Publication of JPWO2023223454A5 publication Critical patent/JPWO2023223454A5/ja
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JP2022564749A 2022-05-18 2022-05-18 活性ガス生成装置 Active JP7297399B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020652 WO2023223454A1 (ja) 2022-05-18 2022-05-18 活性ガス生成装置

Publications (3)

Publication Number Publication Date
JP7297399B1 JP7297399B1 (ja) 2023-06-26
JPWO2023223454A1 JPWO2023223454A1 (https=) 2023-11-23
JPWO2023223454A5 true JPWO2023223454A5 (https=) 2024-04-25

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ID=86900451

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Application Number Title Priority Date Filing Date
JP2022564749A Active JP7297399B1 (ja) 2022-05-18 2022-05-18 活性ガス生成装置

Country Status (7)

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US (1) US12424418B2 (https=)
EP (1) EP4340548B1 (https=)
JP (1) JP7297399B1 (https=)
KR (1) KR102805775B1 (https=)
CN (1) CN117426143A (https=)
TW (1) TWI841245B (https=)
WO (1) WO2023223454A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114916255B (zh) * 2020-12-07 2025-09-23 株式会社Tmeic 活性气体生成装置
EP4340548B1 (en) * 2022-05-18 2025-10-15 TMEIC Corporation Active-gas-generating apparatus
WO2024084640A1 (ja) * 2022-10-20 2024-04-25 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20250002602A (ko) * 2023-05-01 2025-01-07 가부시키가이샤 티마이크 활성 가스 생성 장치

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US9490106B2 (en) * 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
JP6239483B2 (ja) * 2014-10-29 2017-11-29 東芝三菱電機産業システム株式会社 窒素ラジカル生成システム
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
CN104812154A (zh) * 2015-04-22 2015-07-29 西安交通大学 一种三电极介质阻挡放电等离子体发生装置
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
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US10854426B2 (en) * 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
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JP2019160714A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
US11532458B2 (en) * 2018-05-30 2022-12-20 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus
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US12295089B2 (en) * 2020-02-27 2025-05-06 Tmeic Corporation Active gas generation apparatus
JP7351245B2 (ja) * 2020-03-13 2023-09-27 ウシオ電機株式会社 誘電体バリア式プラズマ発生装置、及び、誘電体バリア式プラズマ発生装置のプラズマ放電開始方法
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KR102606837B1 (ko) * 2021-11-02 2023-11-29 피에스케이 주식회사 상부 전극 유닛, 그리고 이를 포함하는 기판 처리 장치
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