JPWO2025062637A5 - - Google Patents

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Publication number
JPWO2025062637A5
JPWO2025062637A5 JP2024517145A JP2024517145A JPWO2025062637A5 JP WO2025062637 A5 JPWO2025062637 A5 JP WO2025062637A5 JP 2024517145 A JP2024517145 A JP 2024517145A JP 2024517145 A JP2024517145 A JP 2024517145A JP WO2025062637 A5 JPWO2025062637 A5 JP WO2025062637A5
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
conductive portion
mounting substrate
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024517145A
Other languages
English (en)
Japanese (ja)
Other versions
JP7678934B1 (ja
JPWO2025062637A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/034522 external-priority patent/WO2025062637A1/ja
Publication of JPWO2025062637A1 publication Critical patent/JPWO2025062637A1/ja
Application granted granted Critical
Publication of JP7678934B1 publication Critical patent/JP7678934B1/ja
Publication of JPWO2025062637A5 publication Critical patent/JPWO2025062637A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2024517145A 2023-09-22 2023-09-22 半導体装置 Active JP7678934B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/034522 WO2025062637A1 (ja) 2023-09-22 2023-09-22 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2025062637A1 JPWO2025062637A1 (https=) 2025-03-27
JP7678934B1 JP7678934B1 (ja) 2025-05-16
JPWO2025062637A5 true JPWO2025062637A5 (https=) 2025-08-27

Family

ID=95072624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024517145A Active JP7678934B1 (ja) 2023-09-22 2023-09-22 半導体装置

Country Status (3)

Country Link
JP (1) JP7678934B1 (https=)
CN (1) CN121890330A (https=)
WO (1) WO2025062637A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
JP2000114413A (ja) * 1998-09-29 2000-04-21 Sony Corp 半導体装置、その製造方法および部品の実装方法
JP3639515B2 (ja) * 2000-09-04 2005-04-20 三洋電機株式会社 Ｍｏｓｆｅｔの実装構造の製造方法
US7786558B2 (en) * 2005-10-20 2010-08-31 Infineon Technologies Ag Semiconductor component and methods to produce a semiconductor component
ITMI20111213A1 (it) * 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
US9673163B2 (en) * 2011-10-18 2017-06-06 Rohm Co., Ltd. Semiconductor device with flip chip structure and fabrication method of the semiconductor device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
EP3648159B1 (en) * 2018-10-31 2021-12-15 Infineon Technologies Austria AG Semiconductor package and method of fabricating a semiconductor package
WO2021112590A2 (ko) * 2019-12-05 2021-06-10 주식회사 아모센스 전력반도체 모듈
IT202000032267A1 (it) * 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

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