JPWO2025062637A1 - - Google Patents

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Publication number
JPWO2025062637A1
JPWO2025062637A1 JP2024517145A JP2024517145A JPWO2025062637A1 JP WO2025062637 A1 JPWO2025062637 A1 JP WO2025062637A1 JP 2024517145 A JP2024517145 A JP 2024517145A JP 2024517145 A JP2024517145 A JP 2024517145A JP WO2025062637 A1 JPWO2025062637 A1 JP WO2025062637A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024517145A
Other languages
Japanese (ja)
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JP7678934B1 (ja
JPWO2025062637A5 (https=
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Publication of JP7678934B1 publication Critical patent/JP7678934B1/ja
Publication of JPWO2025062637A5 publication Critical patent/JPWO2025062637A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
JP2024517145A 2023-09-22 2023-09-22 半導体装置 Active JP7678934B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/034522 WO2025062637A1 (ja) 2023-09-22 2023-09-22 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2025062637A1 true JPWO2025062637A1 (https=) 2025-03-27
JP7678934B1 JP7678934B1 (ja) 2025-05-16
JPWO2025062637A5 JPWO2025062637A5 (https=) 2025-08-27

Family

ID=95072624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024517145A Active JP7678934B1 (ja) 2023-09-22 2023-09-22 半導体装置

Country Status (3)

Country Link
JP (1) JP7678934B1 (https=)
CN (1) CN121890330A (https=)
WO (1) WO2025062637A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
JP2000114413A (ja) * 1998-09-29 2000-04-21 Sony Corp 半導体装置、その製造方法および部品の実装方法
JP3639515B2 (ja) * 2000-09-04 2005-04-20 三洋電機株式会社 Mosfetの実装構造の製造方法
US7786558B2 (en) * 2005-10-20 2010-08-31 Infineon Technologies Ag Semiconductor component and methods to produce a semiconductor component
ITMI20111213A1 (it) * 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
US9673163B2 (en) * 2011-10-18 2017-06-06 Rohm Co., Ltd. Semiconductor device with flip chip structure and fabrication method of the semiconductor device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
EP3648159B1 (en) * 2018-10-31 2021-12-15 Infineon Technologies Austria AG Semiconductor package and method of fabricating a semiconductor package
WO2021112590A2 (ko) * 2019-12-05 2021-06-10 주식회사 아모센스 전력반도체 모듈
IT202000032267A1 (it) * 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

Also Published As

Publication number Publication date
CN121890330A (zh) 2026-04-17
WO2025062637A1 (ja) 2025-03-27
JP7678934B1 (ja) 2025-05-16

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