JP7678934B1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7678934B1
JP7678934B1 JP2024517145A JP2024517145A JP7678934B1 JP 7678934 B1 JP7678934 B1 JP 7678934B1 JP 2024517145 A JP2024517145 A JP 2024517145A JP 2024517145 A JP2024517145 A JP 2024517145A JP 7678934 B1 JP7678934 B1 JP 7678934B1
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Japan
Prior art keywords
semiconductor device
electrode
conductive portion
recess
substrate
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JP2024517145A
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English (en)
Japanese (ja)
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JPWO2025062637A1 (https=
JPWO2025062637A5 (https=
Inventor
浩 小林
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2024517145A 2023-09-22 2023-09-22 半導体装置 Active JP7678934B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/034522 WO2025062637A1 (ja) 2023-09-22 2023-09-22 半導体装置

Publications (3)

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JPWO2025062637A1 JPWO2025062637A1 (https=) 2025-03-27
JP7678934B1 true JP7678934B1 (ja) 2025-05-16
JPWO2025062637A5 JPWO2025062637A5 (https=) 2025-08-27

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ID=95072624

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Application Number Title Priority Date Filing Date
JP2024517145A Active JP7678934B1 (ja) 2023-09-22 2023-09-22 半導体装置

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JP (1) JP7678934B1 (https=)
CN (1) CN121890330A (https=)
WO (1) WO2025062637A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076195A (ja) * 2000-09-04 2002-03-15 Sanyo Electric Co Ltd Ｍｏｓｆｅｔの実装構造およびその製造方法
US20070090523A1 (en) * 2005-10-20 2007-04-26 Ralf Otremba Semiconductor component and methods to produce a semiconductor component
US20130003309A1 (en) * 2011-06-30 2013-01-03 Stmicroelectronics S.R.L. Half-bridge electronic device with common auxiliary heat sink
JP2013089948A (ja) * 2011-10-18 2013-05-13 Rohm Co Ltd 半導体装置およびその製造方法
US20160111356A1 (en) * 2014-10-16 2016-04-21 International Rectifier Corporation Compact Multi-Die Power Semiconductor Package
US20200135619A1 (en) * 2018-10-31 2020-04-30 Infineon Technologies Austria Ag Semiconductor Package and Method of Fabricating a Semiconductor Package
KR20210070928A (ko) * 2019-12-05 2021-06-15 주식회사 아모센스 전력반도체 모듈
US20220199563A1 (en) * 2020-12-23 2022-06-23 Stmicroelectronics S.R.L. High thermal dissipation, packaged electronic device and manufacturing process thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
JP2000114413A (ja) * 1998-09-29 2000-04-21 Sony Corp 半導体装置、その製造方法および部品の実装方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076195A (ja) * 2000-09-04 2002-03-15 Sanyo Electric Co Ltd Ｍｏｓｆｅｔの実装構造およびその製造方法
US20070090523A1 (en) * 2005-10-20 2007-04-26 Ralf Otremba Semiconductor component and methods to produce a semiconductor component
US20130003309A1 (en) * 2011-06-30 2013-01-03 Stmicroelectronics S.R.L. Half-bridge electronic device with common auxiliary heat sink
JP2013089948A (ja) * 2011-10-18 2013-05-13 Rohm Co Ltd 半導体装置およびその製造方法
US20160111356A1 (en) * 2014-10-16 2016-04-21 International Rectifier Corporation Compact Multi-Die Power Semiconductor Package
US20200135619A1 (en) * 2018-10-31 2020-04-30 Infineon Technologies Austria Ag Semiconductor Package and Method of Fabricating a Semiconductor Package
KR20210070928A (ko) * 2019-12-05 2021-06-15 주식회사 아모센스 전력반도체 모듈
US20220199563A1 (en) * 2020-12-23 2022-06-23 Stmicroelectronics S.R.L. High thermal dissipation, packaged electronic device and manufacturing process thereof

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Publication number Publication date
CN121890330A (zh) 2026-04-17
WO2025062637A1 (ja) 2025-03-27
JPWO2025062637A1 (https=) 2025-03-27

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