CN121890330A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN121890330A
CN121890330A CN202380102351.0A CN202380102351A CN121890330A CN 121890330 A CN121890330 A CN 121890330A CN 202380102351 A CN202380102351 A CN 202380102351A CN 121890330 A CN121890330 A CN 121890330A
Authority
CN
China
Prior art keywords
semiconductor device
electrode
conductive portion
conductive
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380102351.0A
Other languages
English (en)
Chinese (zh)
Inventor
小林浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN121890330A publication Critical patent/CN121890330A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN202380102351.0A 2023-09-22 2023-09-22 半导体装置 Pending CN121890330A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/034522 WO2025062637A1 (ja) 2023-09-22 2023-09-22 半導体装置

Publications (1)

Publication Number Publication Date
CN121890330A true CN121890330A (zh) 2026-04-17

Family

ID=95072624

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380102351.0A Pending CN121890330A (zh) 2023-09-22 2023-09-22 半导体装置

Country Status (3)

Country Link
JP (1) JP7678934B1 (https=)
CN (1) CN121890330A (https=)
WO (1) WO2025062637A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167565A (ja) * 1990-10-31 1992-06-15 Fujitsu Ltd フリップチップ型受光素子
JP2000114413A (ja) * 1998-09-29 2000-04-21 Sony Corp 半導体装置、その製造方法および部品の実装方法
JP3639515B2 (ja) * 2000-09-04 2005-04-20 三洋電機株式会社 Ｍｏｓｆｅｔの実装構造の製造方法
US7786558B2 (en) * 2005-10-20 2010-08-31 Infineon Technologies Ag Semiconductor component and methods to produce a semiconductor component
ITMI20111213A1 (it) * 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
US9673163B2 (en) * 2011-10-18 2017-06-06 Rohm Co., Ltd. Semiconductor device with flip chip structure and fabrication method of the semiconductor device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
EP3648159B1 (en) * 2018-10-31 2021-12-15 Infineon Technologies Austria AG Semiconductor package and method of fabricating a semiconductor package
WO2021112590A2 (ko) * 2019-12-05 2021-06-10 주식회사 아모센스 전력반도체 모듈
IT202000032267A1 (it) * 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

Also Published As

Publication number Publication date
WO2025062637A1 (ja) 2025-03-27
JP7678934B1 (ja) 2025-05-16
JPWO2025062637A1 (https=) 2025-03-27

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