CN117426143A - 活性气体生成装置 - Google Patents

活性气体生成装置 Download PDF

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Publication number
CN117426143A
CN117426143A CN202280037972.0A CN202280037972A CN117426143A CN 117426143 A CN117426143 A CN 117426143A CN 202280037972 A CN202280037972 A CN 202280037972A CN 117426143 A CN117426143 A CN 117426143A
Authority
CN
China
Prior art keywords
electrode
dielectric film
space
dielectric
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280037972.0A
Other languages
English (en)
Chinese (zh)
Inventor
有田廉
渡边谦资
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mitsubishi Electric Industrial Systems Corp
Original Assignee
Toshiba Mitsubishi Electric Industrial Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mitsubishi Electric Industrial Systems Corp filed Critical Toshiba Mitsubishi Electric Industrial Systems Corp
Publication of CN117426143A publication Critical patent/CN117426143A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/036—Spacing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
CN202280037972.0A 2022-05-18 2022-05-18 活性气体生成装置 Pending CN117426143A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020652 WO2023223454A1 (ja) 2022-05-18 2022-05-18 活性ガス生成装置

Publications (1)

Publication Number Publication Date
CN117426143A true CN117426143A (zh) 2024-01-19

Family

ID=86900451

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280037972.0A Pending CN117426143A (zh) 2022-05-18 2022-05-18 活性气体生成装置

Country Status (7)

Country Link
US (1) US12424418B2 (https=)
EP (1) EP4340548B1 (https=)
JP (1) JP7297399B1 (https=)
KR (1) KR102805775B1 (https=)
CN (1) CN117426143A (https=)
TW (1) TWI841245B (https=)
WO (1) WO2023223454A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114916255B (zh) * 2020-12-07 2025-09-23 株式会社Tmeic 活性气体生成装置
EP4340548B1 (en) * 2022-05-18 2025-10-15 TMEIC Corporation Active-gas-generating apparatus
WO2024084640A1 (ja) * 2022-10-20 2024-04-25 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20250002602A (ko) * 2023-05-01 2025-01-07 가부시키가이샤 티마이크 활성 가스 생성 장치

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US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5982100A (en) * 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US9490106B2 (en) * 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
JP6239483B2 (ja) * 2014-10-29 2017-11-29 東芝三菱電機産業システム株式会社 窒素ラジカル生成システム
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
CN104812154A (zh) * 2015-04-22 2015-07-29 西安交通大学 一种三电极介质阻挡放电等离子体发生装置
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) * 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2019049230A1 (ja) * 2017-09-06 2019-03-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
US10854426B2 (en) * 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
US10593560B2 (en) * 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
JP2019160714A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
US11532458B2 (en) * 2018-05-30 2022-12-20 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus
KR102510329B1 (ko) * 2018-06-25 2023-03-17 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치 및 성막 처리 장치
US10892198B2 (en) * 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
JP6844937B2 (ja) * 2019-02-13 2021-03-17 東芝三菱電機産業システム株式会社 活性ガス生成装置
CN113170567B (zh) * 2019-11-12 2023-11-28 东芝三菱电机产业系统株式会社 活性气体生成装置
US11839014B2 (en) * 2019-11-27 2023-12-05 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generating apparatus
US12295089B2 (en) * 2020-02-27 2025-05-06 Tmeic Corporation Active gas generation apparatus
JP7351245B2 (ja) * 2020-03-13 2023-09-27 ウシオ電機株式会社 誘電体バリア式プラズマ発生装置、及び、誘電体バリア式プラズマ発生装置のプラズマ放電開始方法
US12512304B2 (en) * 2020-07-23 2025-12-30 Applied Materials, Inc. Plasma source for semiconductor processing
JP2022049503A (ja) * 2020-09-16 2022-03-29 株式会社東芝 誘電体バリア放電電極及び誘電体バリア放電装置
KR102606837B1 (ko) * 2021-11-02 2023-11-29 피에스케이 주식회사 상부 전극 유닛, 그리고 이를 포함하는 기판 처리 장치
US12080516B2 (en) * 2021-11-23 2024-09-03 Applied Materials, Inc. High density plasma enhanced process chamber
EP4340548B1 (en) * 2022-05-18 2025-10-15 TMEIC Corporation Active-gas-generating apparatus
WO2024084640A1 (ja) * 2022-10-20 2024-04-25 東芝三菱電機産業システム株式会社 活性ガス生成装置

Also Published As

Publication number Publication date
JPWO2023223454A1 (https=) 2023-11-23
US20240297024A1 (en) 2024-09-05
TWI841245B (zh) 2024-05-01
WO2023223454A1 (ja) 2023-11-23
JP7297399B1 (ja) 2023-06-26
EP4340548A1 (en) 2024-03-20
TW202405233A (zh) 2024-02-01
EP4340548B1 (en) 2025-10-15
US12424418B2 (en) 2025-09-23
KR20240004639A (ko) 2024-01-11
KR102805775B1 (ko) 2025-05-14
EP4340548A4 (en) 2025-04-16

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