KR102805775B1 - 활성 가스 생성 장치 - Google Patents

활성 가스 생성 장치 Download PDF

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Publication number
KR102805775B1
KR102805775B1 KR1020237040733A KR20237040733A KR102805775B1 KR 102805775 B1 KR102805775 B1 KR 102805775B1 KR 1020237040733 A KR1020237040733 A KR 1020237040733A KR 20237040733 A KR20237040733 A KR 20237040733A KR 102805775 B1 KR102805775 B1 KR 102805775B1
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KR
South Korea
Prior art keywords
electrode
dielectric film
dielectric
space
cover
Prior art date
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KR1020237040733A
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English (en)
Korean (ko)
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KR20240004639A (ko
Inventor
렌 아리타
겐스케 와타나베
Original Assignee
가부시키가이샤 티마이크
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Publication of KR20240004639A publication Critical patent/KR20240004639A/ko
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/036—Spacing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
KR1020237040733A 2022-05-18 2022-05-18 활성 가스 생성 장치 Active KR102805775B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020652 WO2023223454A1 (ja) 2022-05-18 2022-05-18 活性ガス生成装置

Publications (2)

Publication Number Publication Date
KR20240004639A KR20240004639A (ko) 2024-01-11
KR102805775B1 true KR102805775B1 (ko) 2025-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237040733A Active KR102805775B1 (ko) 2022-05-18 2022-05-18 활성 가스 생성 장치

Country Status (7)

Country Link
US (1) US12424418B2 (https=)
EP (1) EP4340548B1 (https=)
JP (1) JP7297399B1 (https=)
KR (1) KR102805775B1 (https=)
CN (1) CN117426143A (https=)
TW (1) TWI841245B (https=)
WO (1) WO2023223454A1 (https=)

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* Cited by examiner, † Cited by third party
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CN114916255B (zh) * 2020-12-07 2025-09-23 株式会社Tmeic 活性气体生成装置
EP4340548B1 (en) * 2022-05-18 2025-10-15 TMEIC Corporation Active-gas-generating apparatus
WO2024084640A1 (ja) * 2022-10-20 2024-04-25 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20250002602A (ko) * 2023-05-01 2025-01-07 가부시키가이샤 티마이크 활성 가스 생성 장치

Citations (3)

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WO2019229873A1 (ja) 2018-05-30 2019-12-05 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2021095120A1 (ja) 2019-11-12 2021-05-20 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2021106100A1 (ja) 2019-11-27 2021-06-03 東芝三菱電機産業システム株式会社 活性ガス生成装置

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US5982100A (en) * 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US9490106B2 (en) * 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
JP6239483B2 (ja) * 2014-10-29 2017-11-29 東芝三菱電機産業システム株式会社 窒素ラジカル生成システム
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
CN104812154A (zh) * 2015-04-22 2015-07-29 西安交通大学 一种三电极介质阻挡放电等离子体发生装置
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
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WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2019049230A1 (ja) * 2017-09-06 2019-03-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
US10854426B2 (en) * 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
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JP2019160714A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
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KR102606837B1 (ko) * 2021-11-02 2023-11-29 피에스케이 주식회사 상부 전극 유닛, 그리고 이를 포함하는 기판 처리 장치
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EP4340548B1 (en) * 2022-05-18 2025-10-15 TMEIC Corporation Active-gas-generating apparatus
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WO2021095120A1 (ja) 2019-11-12 2021-05-20 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2021106100A1 (ja) 2019-11-27 2021-06-03 東芝三菱電機産業システム株式会社 活性ガス生成装置

Also Published As

Publication number Publication date
JPWO2023223454A1 (https=) 2023-11-23
CN117426143A (zh) 2024-01-19
US20240297024A1 (en) 2024-09-05
TWI841245B (zh) 2024-05-01
WO2023223454A1 (ja) 2023-11-23
JP7297399B1 (ja) 2023-06-26
EP4340548A1 (en) 2024-03-20
TW202405233A (zh) 2024-02-01
EP4340548B1 (en) 2025-10-15
US12424418B2 (en) 2025-09-23
KR20240004639A (ko) 2024-01-11
EP4340548A4 (en) 2025-04-16

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Patent event date: 20231127

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