WO2021106100A1 - 活性ガス生成装置 - Google Patents
活性ガス生成装置 Download PDFInfo
- Publication number
- WO2021106100A1 WO2021106100A1 PCT/JP2019/046328 JP2019046328W WO2021106100A1 WO 2021106100 A1 WO2021106100 A1 WO 2021106100A1 JP 2019046328 W JP2019046328 W JP 2019046328W WO 2021106100 A1 WO2021106100 A1 WO 2021106100A1
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- Prior art keywords
- electrode
- gas
- base flange
- dielectric film
- active gas
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- 239000002184 metal Substances 0.000 claims abstract description 144
- 239000000470 constituent Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 321
- 239000002994 raw material Substances 0.000 claims description 22
- 230000003213 activating effect Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 abstract description 36
- 230000005684 electric field Effects 0.000 abstract description 17
- 239000012789 electroconductive film Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
Definitions
- the present invention relates to an active gas generator that generates an active gas by a parallel plate type dielectric barrier discharge and supplies the active gas to the processing space in the subsequent stage.
- Patent Document 1 As an active gas generator that generates an active gas by a parallel plate type dielectric barrier discharge, for example, there is a nitrogen radical generation system disclosed in Patent Document 1.
- the nitrogen radical generation system which is an active gas generator, uses a dielectric barrier discharge to generate a nitrogen radical, which is an active gas, from a nitrogen gas, which is a raw material gas, and ejects the active gas into a processing chamber.
- the voltage applied to generate the dielectric barrier discharge in the discharge space between the first electrode and the second electrode causes dielectric breakdown even in the processing chamber of the processing chamber, which is the device after the active gas generator.
- An abnormal discharge which is a discharge that causes metal contamination, is generated in the processing chamber by creating a region having an electric field strength to be generated.
- the processing chamber Since the processing chamber is in a reduced pressure environment compared to the space inside the active gas generator, the ions generated by the abnormal discharge are accelerated by the electric field and collide with the wafer, which is the object to be processed in the processing chamber, causing damage to the wafer. There was a problem of giving.
- An object of the present invention is to solve the above-mentioned problems and to provide an active gas generator capable of intentionally weakening the electric field strength in the region where the active gas reaches the processing space in the subsequent stage.
- the active gas generating device in the present invention is an active gas generating device that generates an active gas obtained by activating the raw material gas supplied to the discharge space, and is a first electrode component and the first electrode component.
- a second electrode component provided below the above, and the first electrode component is formed on the upper surface of the first electrode dielectric film and the first electrode dielectric film. It has one metal electrode, and the second electrode component comprises a second electrode dielectric film and a second metal electrode formed on the lower surface of the second electrode dielectric film.
- the second metal electrode is set to a ground potential, and the first and second electrode dielectric films face each other.
- the discharge space includes a region where the first and second metal electrodes overlap in a plan view, and the dielectric film for the first electrode is a gas supply port for supplying the raw material gas to the discharge space.
- the gas supply port is provided in a central portion so as not to overlap with the first metal electrode in a plan view, and the second electrode dielectric film ejects the active gas downward.
- the first electrode component has an auxiliary conductive film formed on the upper surface of the first electrode dielectric film independently of the first metal electrode.
- the discharge space is formed so as to surround the gas supply port without overlapping with the gas supply port in a plan view, and the at least one gas ejection hole is formed in a plan view.
- the path leading to the active gas is defined as an active gas flow path
- the auxiliary conductive film surrounds the first metal electrode without overlapping with the first metal electrode in a plan view, and the active gas is viewed in a plan view.
- the active gas generator is provided in contact with a part of the upper surface of the auxiliary conductive film, further includes an electrode auxiliary member having conductivity, and the auxiliary conductive film is the electrode. The ground potential is set via the auxiliary member.
- the auxiliary conductive film set to the ground potential via the electrode auxiliary member is provided so as to overlap a part of the active gas flow path in a plan view.
- the active gas generator in the present invention can relax the electric field strength in the active gas flow path by the auxiliary conductive film set to the ground potential.
- the auxiliary conductive film is formed so as to surround the first metal electrode without overlapping with the first metal electrode in a plan view.
- the auxiliary conductive film can be set to the ground potential via the electrode auxiliary member without straddling the upper part of the first metal electrode, the auxiliary conductive film set to the ground potential and the AC voltage are applied.
- the insulation can be separated from the first metal electrode relatively easily.
- the electric field strength in the region where the active gas reaches the processing space is intentionally weakened, and the first metal electrode and the auxiliary conductive film have a relatively simple configuration. It has the effect of ensuring good insulation stability.
- FIG. 1 It is explanatory drawing which shows the basic structure of the active gas generator which is Embodiment 1 of this invention. It is a top view which shows the top surface structure of the high voltage application electrode part shown in FIG. It is sectional drawing which shows the cross-sectional structure of the high voltage application electrode part shown in FIG. It is a top view which shows the lower surface structure of the ground potential electrode part shown in FIG. It is sectional drawing which shows the cross-sectional structure of the ground potential electrode part shown in FIG. It is a top view which shows the lower surface structure of the base flange shown in FIG. It is sectional drawing which shows the cross-sectional structure of the base flange shown in FIG. It is a top view which shows the top surface structure of the electrode holding member shown in FIG.
- FIG. 13 is an explanatory diagram showing a basic configuration of an active gas generator which is a prerequisite technique of the present invention.
- FIG. 13 shows the XYZ Cartesian coordinate system.
- the gas generator 200 of the prerequisite technology is an active gas generating device that generates an active gas 7 (nitrogen radical or the like) obtained by activating the raw material gas 5 (nitrogen gas or the like) supplied to the discharge space 6.
- the gas generator 200 includes a metal housing 31, a gas supply port 32, an active gas generation electrode group 201, and an orifice portion 40 as main components.
- the metal housing 31 is a housing for the metal gas generator 200 set to the ground potential, and the gas supply port 32 is attached to the upper portion, and the raw material gas 5 is sent from the gas supply port 32 to the metal housing 31. It is supplied to the space 33 inside the housing.
- the active gas generation electrode group 201 is arranged in the housing internal space 33 of the metal housing 31 in the gas generator 200. Specifically, the active gas generation electrode group 201 is arranged on the bottom surface of the metal housing 31. An orifice portion 40 is incorporated in a part of the bottom surface of the metal housing 31.
- the active gas generation electrode group 201 is composed of a combination of the high voltage application electrode portion 1 which is the first electrode constituent portion and the ground potential electrode portion 2 which is the second electrode constituent portion, and is composed of the ground potential electrode portion 2. Is provided below the high voltage application electrode portion 1.
- the high voltage application electrode portion 1 includes an electrode dielectric film 11 which is a first electrode dielectric film, and a metal electrode 10 which is a first metal electrode formed on the upper surface of the electrode dielectric film 11. Is the main component.
- the high voltage application electrode portion 1 is formed on the upper surface of the electrode dielectric film 11 independently of the metal electrode 10, and further has a conductive metal auxiliary conductive film 12.
- the auxiliary conductive film 12 is provided between at least one gas ejection hole 25 and the metal metal electrode 10 in a plan view.
- the metal auxiliary conductive film 12 may overlap with at least one gas ejection hole 25 in a plan view.
- the metal electrode 10 and the auxiliary conductive film 12 are provided on the upper surface of the electrode dielectric film 11 by using, for example, a sputtering method or a printing firing method.
- the ground potential electrode portion 2 is mainly composed of an electrode dielectric film 21 which is a second electrode dielectric film and a metal electrode 20 which is a second metal electrode formed on the lower surface of the electrode dielectric film 21. It has as a component.
- the metal electrode 20 is provided on the lower surface of the electrode dielectric film 21 by using a sputtering method, a printing firing method, or the like.
- the electrode dielectric film 11 of the high voltage application electrode portion 1 and the electrode dielectric film 21 of the ground potential electrode portion 2 are installed so as to be provided with a predetermined constant interval by a spacer or the like (not shown). ..
- an AC voltage is applied between the metal electrode 10 and the metal electrode 20 from the high frequency power supply 9. Specifically, an AC voltage is applied to the metal electrode 10 from the high-frequency power source 9, and the metal electrode 20 and the auxiliary conductive film 12 are set to the ground potential via the metal housing 31 to which the ground potential is applied.
- a discharge space 6 is provided including a region where the metal electrodes 10 and 20 overlap in a plan view.
- the shape of the upper surface of the electrode dielectric film 11 and the lower surface of the electrode dielectric film 21 may be flush with each other, or may be provided with a predetermined shape.
- a concavo-convex shape that becomes an obstacle may be provided so that creepage discharge does not occur between the metal electrode 10 and the auxiliary conductive film 12.
- the electrode dielectric film 21 has at least one gas ejection hole 25 for finally ejecting the active gas 7 into the external processing space 63.
- the orifice portion 40 is provided below the dielectric film 21 for electrodes, and has at least one through hole 49 corresponding to at least one gas ejection hole 25.
- the orifice portion 40 uses one of ceramic, glass, and sapphire as a constituent material.
- an AC voltage is applied between the metal electrodes 10 and 20 from the high frequency power source 9 to generate a dielectric barrier discharge in the discharge space 6 of the active gas generation electrode group 201. ..
- the raw material gas 5 is supplied from the gas supply port 32 into the housing internal space 33 of the metal housing 31, and the raw material gas 5 is circulated from the outer peripheral portion of the active gas generation electrode group 201 to the inside.
- the active gas 7 is generated by activating the raw material gas 5 in the discharge space 6, and the generated active gas 7 is at least one from the discharge space 6 in the dielectric space. It flows through an active gas flow path, which is a path leading to one gas ejection hole 25.
- the active gas 7 flowing through the active gas flow path is finally supplied to the subsequent processing space 63 along the gas flow 15 via at least one gas ejection hole 25 and the through hole 49 of the orifice portion 40.
- the auxiliary conductive film 12 is provided so as to overlap a part of the active gas distribution path in a plan view.
- the gas generator 200 of the prerequisite technology has the following features (1) and (2).
- the auxiliary conductive film 12 is provided so as to overlap a part of the active gas flow path in a plan view.
- the auxiliary conductive film 12 is set to the ground potential.
- the gas generator 200 of the present embodiment has the above-mentioned features (1) and (2), and is provided with the auxiliary conductive film 12 which is an auxiliary conductive film set to the ground potential. The strength can be relaxed.
- the gas generator 200 of the present embodiment intentionally weakens the electric field strength of the active gas flow path and the processing space 63 provided below the orifice portion 40 without changing the structure of the orifice portion 40. It has the effect of being able to do it.
- the metal electrode 10 to which the high voltage is applied and the auxiliary conductive film 12 to be grounded are formed independently of each other in the high voltage application electrode portion 1.
- the auxiliary conductive film 12 is arranged inside the metal electrode 10 in a plan view.
- the auxiliary conductive film 12 and the bottom surface or the side surface of the metal housing 31 are electrically connected by using a conductive connecting member. There is a way to do it.
- the connecting member needs to be provided in the space 33 inside the housing, the connecting member needs to straddle the metal electrode 10. At this time, the connecting member and the metal electrode 10 are connected to each other. As a matter of course, it is necessary to ensure reliable insulation between them.
- the periphery of the conductive connecting member it is not preferable to cover the periphery of the conductive connecting member with an insulating member made of various materials. This is because when the insulating member covering the connecting member evaporates, the evaporated insulating member flows directly to the discharge space 6 and the processing space 63.
- the second setting method for setting the ground potential is a method of electrically connecting to the auxiliary conductive film 12 from the upper surface of the metal housing 31 by using a connecting member having conductivity.
- the connecting member is pressed by the elastic member using an elastic member such as a spring when the lid of the metal housing 31 is closed (Aspect A), or the metal housing 31.
- a mode (aspect B) in which a through hole is provided in the lid and an existing introduction terminal serving as a connecting member is used for connection is conceivable.
- the connecting member and its peripheral structure an elastic member is used, a hole is provided on the upper surface of the metal housing 31, and the connecting member is dedicated. There is a problem that it is unavoidable to complicate the operation (such as using an introduction terminal).
- the problems of the above-mentioned prerequisite technology are solved, the electric field strength in the region where the active gas reaches the processing space in the subsequent stage is intentionally weakened, and the electric field strength is relatively weakened. It is an object of the present invention to obtain an active gas generator capable of stably ensuring the insulating property between the first metal electrode and the auxiliary conductive film with a simple configuration.
- FIG. 1 is an explanatory diagram showing a basic configuration of an active gas generator according to a first embodiment of the present invention.
- FIG. 1 shows an XYZ Cartesian coordinate system.
- the active gas generator 101 of the first embodiment is an active gas generating device that generates an active gas 7 (nitrogen radical or the like) obtained by activating the raw material gas 5 (nitrogen gas or the like) supplied to the discharge space 6. ..
- the active gas generator 101 includes a metal housing 3, a base flange 4, a high voltage application electrode portion 1 (including an auxiliary conductive film 18), a ground potential electrode portion 2, and an electrode holding member 8 as main components. ..
- the metal housing 3 is a metal housing set to a ground potential and having an opening at the bottom.
- the metal housing 3 is fixed to the base flange 4 with the metal base flange 4 as the bottom surface. Therefore, the opening of the metal housing 3 is shielded by the base flange 4, and the space 33 inside the housing is formed by the metal housing 3 and the base flange 4.
- a gas supply port 30 is attached near the upper end of the metal housing 3, and the raw material gas 5 is supplied to the housing internal space 33 from the gas supply port 30.
- a laminated structure of the high voltage application electrode portion 1 and the ground potential electrode portion 2 is arranged in the housing internal space 33 of the active gas generator 101. Specifically, the ground potential electrode portion 2 is arranged on the upper surface of the base flange 4 in such a manner that the metal electrode 20 comes into contact with the upper surface of the base flange 4.
- the conductive base flange 4 contacts the metal electrode 20 to support the ground potential electrode portion 2.
- the combination of the high voltage application electrode portion 1 which is the first electrode constituent portion and the ground potential electrode portion 2 which is the second electrode constituent portion constitutes an electrode pair having a discharge space 6 inside, and the ground potential electrode portion 2 is provided below the high voltage application electrode portion 1.
- the high voltage application electrode portion 1 includes an electrode dielectric film 11 which is a first electrode dielectric film, and a metal electrode 10 which is a first metal electrode formed on the upper surface of the electrode dielectric film 11. Is the main component.
- the high voltage application electrode portion 1 is formed on the upper surface of the electrode dielectric film 11 independently of the metal electrode 10, and further has an auxiliary conductive film 18 made of metal and having conductivity.
- the metal electrode 10 and the auxiliary conductive film 18 are provided on the upper surface of the electrode dielectric film 11 by using, for example, a sputtering method or a printing firing method.
- the ground potential electrode portion 2 is mainly composed of an electrode dielectric film 21 which is a second electrode dielectric film and a metal electrode 20 which is a second metal electrode formed on the lower surface of the electrode dielectric film 21. It has as a component.
- the metal electrode 20 is provided on the lower surface of the electrode dielectric film 21 by using a sputtering method, a printing firing method, or the like.
- an AC voltage is applied between the metal electrode 10 and the metal electrode 20 from the high frequency power supply 9. Specifically, an AC voltage is applied to the metal electrode 10 from the high frequency power supply 9, and the metal electrode 20 is set to the ground potential via the base flange 4.
- a discharge space 6 is provided in a closed space 28 which is a dielectric space in which the electrode dielectric film 11 and the electrode dielectric film 21 face each other, including a region where the metal electrodes 10 and 20 overlap in a plan view.
- the shape of the upper surface of the electrode dielectric film 11 and the lower surface of the electrode dielectric film 21 may be flush with each other, or may be provided with a predetermined shape.
- a concavo-convex shape that becomes an obstacle may be provided so that creepage discharge does not occur between the metal electrode 10 and the auxiliary conductive film 18.
- the electrode dielectric film 21 has a plurality of gas ejection holes 23 (at least one gas ejection hole) for ejecting the active gas 7 into the lower (post-stage) processing space 63 through the gas ejection hole 43 of the base flange 4. )have.
- a part of the base flange 4 exists below the electrode dielectric film 21 without passing through the metal electrode 20, and a plurality of gas ejection holes 43 (at least one base flange gas) corresponding to the plurality of gas ejection holes 23. It has a ejection hole).
- FIG. 2 is a plan view showing the upper surface configuration of the high voltage application electrode portion 1 shown in FIG. 1, and FIG. 3 is a cross-sectional view showing the cross-sectional structure of the high voltage application electrode portion 1.
- the AA cross section of FIG. 2 is shown in FIG.
- the XYZ Cartesian coordinate system is shown in each of FIGS. 2 and 3.
- the electrode dielectric film 11 of the high voltage application electrode portion 1 has a circular shape in a plan view, and is used to supply the raw material gas 5 of the housing internal space 33 to the discharge space 6.
- the gas supply port 13 is provided in the central portion. The gas supply port 13 is formed so as to penetrate the dielectric film 11 for electrodes.
- the metal electrode 10 is formed in an annular shape so as to surround the gas supply port 13 without overlapping the gas supply port 13 in a plan view.
- the auxiliary conductive film 18 is formed in an annular shape so as to surround the metal electrode 10 along the outer circumference of the electrode dielectric film 11 without overlapping with the metal electrode 10 in a plan view.
- FIG. 4 is a plan view showing the lower surface configuration of the ground potential electrode portion 2 shown in FIG. 1, and FIG. 5 is a cross-sectional view showing the cross-sectional structure of the ground potential electrode portion 2.
- the BB cross section of FIG. 4 is shown in FIG.
- the XYZ Cartesian coordinate system is shown in FIGS. 4 and 5, respectively.
- the metal electrode 20 of the ground potential electrode portion 2 is formed in a circular shape in a plan view in the central region of the lower surface of the electrode dielectric film 21.
- the metal electrode 20 is formed so as to include all the metal electrodes 10 in a plan view
- the discharge space 6 in which the metal electrode 20 and the metal electrode 10 overlap in a plan view is substantially formed of the metal electrode 10. Specified by region.
- the electrode dielectric film 21 of the ground potential electrode portion 2 has a circular shape in a plan view, and a plurality of gas ejection holes 23 (at least one gas) for ejecting the active gas 7 generated in the discharge space 6 downward. It has a ejection hole). Each of the plurality of gas ejection holes 23 is formed so as to penetrate the electrode dielectric film 21.
- the plurality of gas ejection holes 23 are discretely provided along the circumferential direction so as to surround the metal electrode 20 without overlapping with the metal electrode 20 in a plan view.
- the electrode dielectric film 21 integrally has a protruding region 21t that protrudes upward along the outer circumference in a plan view.
- the electrode dielectric films 11 and 21 are laminated so that the lower surface of the electrode dielectric film 11 contacts the upper surface of the protruding region 21t of the electrode dielectric film 21.
- the electrodes dielectric films 11 and 21 are laminated by contacting the surfaces of the lower surface of the electrode dielectric film 11 and the upper surface of the protruding region 21t.
- a closed space 28 completely isolated from the outside is formed. can do. That is, the space inside the housing 33 and the closed space 28 are connected only via the gas supply port 13 for supplying the discharge space 6.
- the gap length of the discharge space 6 can be defined by the protruding height from the upper surface of the electrode dielectric film 21 in the protruding region 21t.
- the protruding region 21t may be formed of a separate component from the electrode dielectric film 21.
- This closed space 28 serves as a dielectric space in which the electrode dielectric films 11 and 21 face each other.
- a discharge space 6 is provided in the closed space 28, and the discharge space 6 is a space in the closed space 28 including a region in which the metal electrodes 10 and 20 overlap in a plan view.
- the metal electrode 10 does not overlap with the gas supply port 13 in a plan view
- the discharge space 6 does not overlap with the gas supply port 13 in a plan view
- the gas follows the plan shape of the metal electrode 10. It will be formed so as to surround the supply port 13.
- the plurality of gas ejection holes 23 are arranged so that the distance from the gas supply port 13 is longer than that of the discharge space 6 without overlapping the gas supply port 13 and the discharge space 6 (metal electrode 10) in a plan view.
- the path from the discharge space 6 to each of the plurality of gas ejection holes 23 in the closed space 28 is defined as an active gas flow path through which the active gas 7 flows.
- the auxiliary conductive film 18 when the gas supply port 13 is set as the center position, the auxiliary conductive film 18 is located outside the discharge space 6 in a plan view and inside a plurality of gas ejection holes 23 in a plan view. Become. Therefore, the auxiliary conductive film 18 overlaps a part of the active gas flow path in a plan view. As shown in FIG. 1, it is desirable that a part of the auxiliary conductive film 18 overlaps with a plurality of gas ejection holes 23 in a plan view. This is because the electric field strength at the end of the active gas flow path can be reliably reduced.
- the plurality of gas ejection holes 23 can have an orifice function.
- the "orifice function” means a function of lowering the pressure in the region after passage from the pressure in the region before passage with respect to the region before and after the passage of the gas passage portion (gas ejection hole 23). ing.
- FIG. 6 is a plan view showing the lower surface configuration of the base flange 4 shown in FIG. 1
- FIG. 7 is a cross-sectional view showing the cross-sectional structure of the base flange 4.
- the CC cross section of FIG. 6 is shown in FIG.
- the XYZ Cartesian coordinate system is shown in each of FIGS. 6 and 7.
- the base flange 4 has a circular shape in a plan view, and the base flange 4 has a plurality of gas ejection holes 43 (at least one gas ejection hole for the base flange). ing. Each of the plurality of gas ejection holes 43 penetrates the base flange 4. Further, a ground potential is applied to the base flange 4 made of metal and having conductivity.
- the plurality of gas ejection holes 43 are discretely provided along the circumferential direction so as to surround the gas supply port 13 in a plan view.
- the plurality of gas ejection holes 43 of the base flange 4 correspond to the plurality of gas ejection holes 23, and are formed at positions corresponding to the plurality of gas ejection holes 23 in a plan view on the upper surface. That is, a plurality of gas ejection holes 43 are provided directly below the plurality of gas ejection holes 23. Therefore, among the plurality of gas ejection holes 23 and the plurality of gas ejection holes 43, the gas ejection holes 43 are provided directly below the gas ejection holes 23 which are in a corresponding relationship with each other.
- the plurality of gas ejection holes 43 are formed so as to be inclined in the direction of the center position (the position where the gas supply port 13 is provided) from the upper surface to the lower surface of the base flange 4.
- the forming position on the lower surface is inside in a plan view as compared with the forming position on the upper surface.
- the plurality of gas ejection holes 43 can have an orifice function.
- the "orifice function” means a function of lowering the pressure in the region after passage from the pressure in the region before passage with respect to the regions before and after the passage of the plurality of gas ejection holes 43 which are gas passage portions. ..
- the plurality of gas ejection holes 23 closer to the discharge space 6 have an orifice function as compared with the plurality of gas ejection holes 43. It is desirable to let it.
- FIG. 8 is a plan view showing the upper surface configuration of the electrode pressing member 8 shown in FIG. 1, and FIG. 9 is a cross-sectional view showing the cross-sectional structure of the electrode pressing member 8.
- the DD cross section of FIG. 8 is shown in FIG.
- the XYZ Cartesian coordinate system is shown in FIGS. 8 and 9, respectively.
- the electrode pressing member 8 which is a metal electrode auxiliary member is a member for pressing the auxiliary conductive film 18 from above, exhibits an annular shape in a plan view, and is an upper surface of the auxiliary conductive film 18. It is provided in such a manner that it comes into contact with a part of.
- the electrode pressing member 8 includes an integrated standing portion 8a and pressing portion 8b.
- the erection portion 8a is erected on the upper surface of the base flange 4 along the outer circumferences of the electrode dielectric films 11 and 21 at a slight distance from the side surfaces of the electrode dielectric films 11 and 21.
- the pressing portion 8b is formed so as to extend in the horizontal direction (X direction) from the upper portion of the standing portion 8a toward the auxiliary conductive film 18.
- the pressing portion 8b of the electrode pressing member 8 is formed inward with a predetermined width along the outer circumference of the electrode dielectric film 11, and the predetermined width is the auxiliary conductive film 18.
- the value is set so that it contacts a part of the upper surface and does not overlap with the metal electrode 10 in a plan view.
- the pressing portion 8b of the electrode pressing member 8 is provided further away from the metal electrode 10 than the insulating distance ⁇ D1. Therefore, the electrode pressing member 8, the auxiliary conductive film 18, and the metal electrode 10 are electrically independent.
- the erection portion 8a comes into contact with the upper surface of the base flange 4 to electrically connect with the base flange 4, and the erection portion 8a is It is fixed on the upper surface of the base flange 4.
- the auxiliary conductive film 18 can be set to the ground potential relatively easily through the base flange 4 and the electrode pressing member 8.
- the electrode pressing member 8 Since the electrode pressing member 8 is provided on the opposite side of the metal electrode 10 with reference to the auxiliary conductive film 18, the electrode pressing member 8 does not straddle the upper part of the metal electrode 10.
- the auxiliary conductive film 18 sufficiently secures the insulation distance ⁇ D1 from the metal electrode 10 and the electrode pressing member 8 is formed further away from the insulating distance ⁇ D1, the auxiliary conductive film 18 and the electrode pressing member 8 are formed. It is not necessary to cover the member 8 and the like with an insulating member.
- the raw material gas 5 is activated in the discharge space 6 included in the closed space 28 which is a dielectric space, so that the active gas 7 can be obtained.
- the active gas 7 obtained from the discharge space 6 flows along the gas flow 15 along the active gas flow path in the closed space 28, and then is ejected from the plurality of gas ejection holes 23 toward the lower base flange 4. To.
- the active gas 7 ejected downward from the plurality of gas ejection holes 23 is supplied to the plurality of gas ejection holes 43 of the base flange 4 provided corresponding to the plurality of gas ejection holes 23. Further, the active gas 7 is supplied from the plurality of gas ejection holes 43 to the lower processing space 63 along the gas flow 15. In this way, the processing space 63 is provided after the active gas generator 101.
- a gap is shown between the plurality of gas ejection holes 23 and the plurality of gas ejection holes 43 in FIG. 1, in reality, a plurality of gas ejection holes 23 and a plurality of gas ejection holes 23 are used by using an O-ring or the like.
- the gas ejection hole 43 is sealed so that the active gas 7 flows only between the corresponding gas ejection holes 23 and 43.
- the flow path of the active gas 7 between the ground potential electrode portion 2 and the base flange 4 is also sealed by using an O-ring or the like to apply a high voltage to the metal electrode 10 and the metal electrode set to the ground potential. Ensure pressure between the space to which 20 is exposed (the space inside the housing 33 (including the space formed between the side surface of the end of the metal electrode 20 and the standing portion 8a of the electrode pressing member 8)) and the discharge space 6. It becomes possible to separate into.
- the auxiliary conductive film 18 set to the ground potential via the electrode pressing member 8 which is an electrode auxiliary member overlaps a part of the active gas distribution path in a plan view. It is provided to do so.
- the active gas generator 101 can relax the electric field strength in the active gas flow path by the auxiliary conductive film 18 set to the ground potential.
- the auxiliary conductive film 18 is formed so as to surround the metal electrode 10 without overlapping with the metal electrode 10 (first metal electrode) in a plan view.
- the auxiliary conductive film 18 can be set to the ground potential via the electrode pressing member 8 without straddling the upper part of the metal electrode 10, the ground potential is set as an auxiliary.
- the conductive film 18 and the metal electrode 10 to which an AC voltage is applied can be separated from each other by insulation relatively easily.
- the electric field strength in the region where the active gas 7 reaches the processing space 63 through the active gas flow path and the plurality of gas ejection holes 43 is intentionally weakened, and With a relatively simple configuration, the effect of ensuring stable insulation between the metal electrode 10 and the auxiliary conductive film 18 can be obtained.
- the electric field strength of the processing space 63 provided below (rear stage) of the plurality of gas ejection holes 23 can be intentionally weakened.
- a closed space 28 sealed from the outside is formed as a dielectric space between the high voltage application electrode portion 1 and the ground potential electrode portion 2. Therefore, by setting the diameter of the gas supply port 13 of the electrode dielectric film 11 to be sufficiently narrow to have an orifice function, the space inside the housing becomes the closed space 28 including the discharge space 6 and the space outside the closed space 28. A desired pressure difference can be provided between 33 and 33.
- the "orifice function" means a function of lowering the pressure in the region after passage from the pressure in the region before passage with respect to the region before and after the passage of the gas supply port 13 which is the gas passage portion.
- the pressure in the housing interior space 33 which is the space where the upper surface of the metal electrode 10 is mainly exposed, is sufficiently increased, the pressure in the closed space 28 including the discharge space 6 can be set relatively low. Therefore, by sufficiently increasing the pressure in the housing internal space 33, it is possible to effectively suppress the dielectric breakdown of the gas in the housing internal space 33.
- the metal housing 3 can be formed small and the active gas generator 101 can be miniaturized.
- the active gas generator 101 the auxiliary conductive film 18 is pressed from above by the electrode pressing member 8 fixed to the base flange 4. Therefore, the active gas generator 101 can stably fix the high voltage application electrode portion 1 and the ground potential electrode portion 2 on the base flange 4 by the electrode pressing member 8.
- the auxiliary conductive film 18 is formed on the outer peripheral region side of the metal electrode 10, the auxiliary conductive film 18 is compared by the electrode pressing member 8 provided on the outer peripheral region side of the electrode dielectric film 11. It can be easily pressed.
- a means for fixing the pressing portion 8b of the electrode pressing member 8 and a part of the upper surface of the auxiliary conductive film 18 in contact with each other for example, screwing using bolts, nuts, or the like can be considered.
- the auxiliary conductive film 18 can be set to the ground potential via the base flange 4 and the electrode pressing member 8. Therefore, the auxiliary conductive film 18 can be set to the ground potential without providing a connecting member above the metal electrode 10. Therefore, the insulating property between the auxiliary conductive film 18 and the metal electrode 10 can be ensured with a relatively simple configuration.
- the metal electrode 20, which is the second metal electrode can be set to the ground potential relatively easily via the base flange 4. Further, since the base flange 4 is made of metal and has conductivity, the electric field does not leak to the lower processing space 63.
- the active gas 7 can be ejected from the plurality of gas ejection holes 43 (at least one gas ejection hole for the base flange) into the lower (post-stage) processing space 63, the presence of the base flange 4 is the presence of the active gas 7. It does not interfere with the ejection function.
- FIG. 10 is an explanatory diagram showing a basic configuration of an active gas generator according to a second embodiment of the present invention.
- FIG. 10 shows the XYZ Cartesian coordinate system.
- the active gas generator 102 of the second embodiment is an active gas generator that activates the raw material gas 5 supplied to the discharge space 6 to generate the active gas 7.
- the active gas generator 102 of the second embodiment has the same structure as the active gas generator 101 of the first embodiment except that the base flange 4 is replaced with the base flange 4B.
- the same components of the first embodiment are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
- the active gas generator 102 includes a metal housing 3, a base flange 4B, a high voltage application electrode portion 1 (including an auxiliary conductive film 18), a ground potential electrode portion 2, and an electrode holding member 8 as main components. ..
- FIG. 11 is a plan view showing the lower surface configuration of the base flange 4B shown in FIG. 1
- FIG. 12 is a cross-sectional view showing the cross-sectional structure of the base flange 4B.
- the XYZ Cartesian coordinate system is shown in FIGS. 11 and 12, respectively.
- the base flange 4B has a circular shape in a plan view, has a plurality of gas supply ports 51 on the upper surface, and has a plurality of gas ejection holes 54 (plurality) on the lower surface. Has a gas ejection hole for the base flange). Further, a ground potential is applied to the base flange 4B.
- the upper surface of the base flange 4B is discretely arranged along the circumferential direction so as to surround the gas supply port 13 in the same manner as the plurality of gas ejection holes 43 of the first embodiment (see FIG. 6) in a plan view.
- a gas supply port 51 is provided.
- the plurality of gas supply ports 51 of the base flange 4B correspond to the plurality of gas ejection holes 23, and are formed at positions corresponding to the plurality of gas ejection holes 23 in a plan view on the upper surface. That is, a plurality of gas supply ports 51 are provided directly below the plurality of gas ejection holes 23. Therefore, among the plurality of gas ejection holes 23 and the plurality of gas supply ports 51, the gas supply port 51 is provided directly below the gas ejection holes 23 which are in a corresponding relationship with each other.
- each of the plurality of gas supply ports 51 is connected to an intermediate region 52 provided inside the base flange 4B, and a plurality of gas ejection holes 54 are connected to the intermediate region 52, respectively.
- the combination structure of the plurality of gas supply ports 51 and the intermediate region 52 is the gas relay passage 50.
- the intermediate region 52 extends in the horizontal direction (X direction) and is provided inside the base flange 4B. Therefore, the active gas 7 supplied to the plurality of gas supply ports 51 is finally ejected downward from the plurality of gas ejection holes 54 via the intermediate region 52.
- the plurality of gas ejection holes 54 are arranged on the lower surface of the base flange 4B in a so-called shower plate shape which is radially separated and arranged in a plan view.
- the plurality of gas ejection holes 54 can be provided with an orifice function. Since the lower the pressure of the active gas, the longer the life of the active gas, it is desirable that the plurality of gas ejection holes 23 closer to the discharge space 6 have an orifice function as compared with the plurality of gas ejection holes 54.
- the plurality of active gases 7 ejected downward from the plurality of gas ejection holes 23 of the electrode dielectric film 21 are plural. It is supplied to a plurality of gas supply ports 51 of the base flange 4B provided corresponding to the gas ejection holes 23 of the above.
- the active gas 7 is supplied from the plurality of gas supply ports 51 to the processing space 63 below from the plurality of gas ejection holes 54 via the intermediate region 52. In this way, the processing space 63 is provided after the active gas generator 102.
- the active gas 7 is the active gas flow path, the gas relay passage 50, and the plurality of gases.
- the active gas generator 102 In the active gas generator 102, the auxiliary conductive film 18 is pressed from above by the electrode pressing member 8 fixed to the base flange 4B. Therefore, the active gas generator 102 can stably fix the high voltage application electrode portion 1 and the ground potential electrode portion 2 on the base flange 4B by the electrode pressing member 8.
- the auxiliary conductive film 18 is set to the ground potential via the base flange 4B and the electrode pressing member 8, so that the metal electrode has a relatively simple configuration.
- the auxiliary conductive film 18 can be set to the ground potential while ensuring the insulation property with 10.
- the metal electrode 20, which is the second metal electrode can be set to the ground potential relatively easily via the base flange 4B. Further, since the base flange 4 is made of metal and has conductivity, the electric field does not leak to the lower processing space 63.
- the base flange 4B can eject the active gas 7 from the plurality of gas ejection holes 54 (the plurality of gas ejection holes for the base flange) into the lower processing space 63 via the gas relay passage 50. , The presence of the base flange 4B does not interfere with the ejection function of the active gas 7.
- the plurality of gas ejection holes 54 of the base flange 4B are radially separated and arranged in a plan view, that is, arranged in a shower plate shape, the wafer and the like in the processing space 63 to which the active gas 7 is ejected, etc.
- the active gas 7 can be uniformly ejected over the entire surface of the object to be treated.
- the raw material gas 5 used in the active gas generators 101 and 102 of the above-described embodiment is preferably a gas containing at least one of hydrogen, nitrogen, oxygen, fluorine, and chlorine gas.
- nitrogen or oxygen is used as the raw material gas 5
- an insulating film of a nitride film or an oxide film can be formed.
- fluorine or chlorine gas is used as the raw material gas 5
- the activated fluorine gas or chlorine gas can be used as the etching gas or the cleaning gas.
- hydrogen or nitrogen is used as the raw material gas 5
- the surface of a predetermined object such as a substrate can be hydrogenated or nitrided by the activated hydrogen gas or nitriding gas to perform surface modification treatment.
- planar shapes of the electrode dielectric film 11, the metal electrode 20, the electrode dielectric film 21, and the base flanges 4 and 4B are circular, but other planar shapes such as a rectangular shape. May be formed with.
- the planar shape of the electrode pressing member 8 and the auxiliary conductive film 18 is an annular shape, but it may be formed in another planar shape such as a rectangular shape having an internal space.
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Abstract
Description
(基本構成)
図13はこの発明の前提技術である活性ガス生成装置の基本構成を示す説明図である。図13にXYZ直交座標系を記している。前提技術のガス発生装置200は、放電空間6に供給された原料ガス5(窒素ガス等)を活性化して得られる活性ガス7(窒素ラジカル等)を生成する活性ガス生成装置である。
このように、前提技術のガス発生装置200は、以下の特徴(1)及び特徴(2)を有している。
(1) 補助導電膜12は平面視して上記活性ガス流通経路の一部と重複するように設けられる。
(2) 補助導電膜12は接地電位に設定されている。
前提技術において、高電圧印加電極部1には高電圧が印加される金属電極10と接地される補助導電膜12とが互いに独立して形成されている。しかしながら、平面視してガス噴出孔25を中心とした場合、補助導電膜12は平面視して金属電極10の内側に配置されている。
(基本構成)
図1はこの発明の実施の形態1である活性ガス生成装置の基本構成を示す説明図である。図1にXYZ直交座標系を記している。実施の形態1の活性ガス発生装置101は、放電空間6に供給された原料ガス5(窒素ガス等)を活性化して得られる活性ガス7(窒素ラジカル等)を生成する活性ガス生成装置である。
図2は図1で示した高電圧印加電極部1の上面構成を示す平面図であり、図3は高電圧印加電極部1の断面構造を示す断面図である。図2のA-A断面が図3となる。図2及び図3それぞれにXYZ直交座標系を記す。
図4は図1で示した接地電位電極部2の下面構成を示す平面図であり、図5は接地電位電極部2の断面構造を示す断面図である。図4のB-B断面が図5となる。図4及び図5それぞれにXYZ直交座標系を記す。
図6は図1で示したベースフランジ4の下面構成を示す平面図であり、図7はベースフランジ4の断面構造を示す断面図である。図6のC-C断面が図7となる。図6及び図7それぞれにXYZ直交座標系を記す。
図8は図1で示した電極押え部材8の上面構成を示す平面図であり、図9は電極押え部材8の断面構造を示す断面図である。図8のD-D断面が図9となる。図8及び図9それぞれにXYZ直交座標系を記す。
このような構成の活性ガス発生装置101において、金属筐体3のガス供給口30から筐体内空間33内に供給された原料ガス5は、電極用誘電体膜11のガス供給口13のみから閉鎖空間28内に供給される。
実施の形態1の活性ガス発生装置101において、電極補助部材である電極押え部材8を介して接地電位に設定される補助導電膜18は、平面視して上記活性ガス流通経路の一部と重複するように設けられている。
(基本構成)
図10はこの発明の実施の形態2である活性ガス生成装置の基本構成を示す説明図である。図10にXYZ直交座標系を記している。実施の形態2の活性ガス発生装置102は、活性ガス発生装置101同様、放電空間6に供給された原料ガス5を活性化して得られる活性ガス7を生成する活性ガス生成装置である。
図11は図1で示したベースフランジ4Bの下面構成を示す平面図であり、図12はベースフランジ4Bの断面構造を示す断面図である。図11及び図12それぞれにXYZ直交座標系を記す。
このような構成の活性ガス発生装置102において、実施の形態1の活性ガス発生装置101と同様、電極用誘電体膜21の複数のガス噴出孔23から下方に噴出された活性ガス7は、複数のガス噴出孔23に対応して設けられたベースフランジ4Bの複数のガス供給口51に供給される。
実施の形態2の活性ガス発生装置102は、実施の形態1と同様、電極押え部材8及び補助導電膜18を有するため、活性ガス7が上記活性ガス流通経路、ガス中継通路50及び複数のガス噴出孔54を経て処理空間63に至る領域の電界強度を意図的に弱め、かつ、比較的簡単な構成で金属電極10と補助導電膜18との絶縁性を安定性良く確保することができる効果を奏する。
また、上述した実施の形態の活性ガス発生装置101及び102で用いる原料ガス5は、水素、窒素、酸素、弗素、塩素ガスのうち少なくとも一つを含むガスであることが望ましい。
2 接地電位電極部
3 金属筐体
4,4B ベースフランジ
5 原料ガス
6 放電空間
7 活性ガス
8 電極押え部材
10,20 金属電極
11,21 電極用誘電体膜
13 ガス供給口
18 補助導電膜
23,43,54 ガス噴出孔
28 閉鎖空間
101,102 活性ガス発生装置
Claims (4)
- 放電空間に供給された原料ガスを活性化して得られる活性ガスを生成する活性ガス生成装置であって、
第1の電極構成部と
前記第1の電極構成部の下方に設けられる第2の電極構成部とを備え、
前記第1の電極構成部は、第1の電極用誘電体膜と前記第1の電極用誘電体膜の上面上に形成される第1の金属電極とを有し、前記第2の電極構成部は、第2の電極用誘電体膜と前記第2の電極用誘電体膜の下面上に形成される第2の金属電極とを有し、前記第1の金属電極に交流電圧が印加され、前記第2の金属電極が接地電位に設定され、前記第1及び第2の電極用誘電体膜が対向する誘電体空間内において、前記第1及び第2の金属電極が平面視して重複する領域を前記放電空間として含み、
前記第1の電極用誘電体膜は、前記原料ガスを前記放電空間に供給するためのガス供給口を中央部に有し、前記ガス供給口は平面視して前記第1の金属電極と重複することなく設けられ、
前記第2の電極用誘電体膜は、前記活性ガスを下方に噴出するための少なくとも一つのガス噴出孔を有し、
前記第1の電極構成部は、前記第1の電極用誘電体膜の上面上に前記第1の金属電極と独立して形成される補助導電膜をさらに有し、
前記放電空間は、平面視して、前記ガス供給口と重複することなく、前記ガス供給口を囲むように形成され、
前記少なくとも一つのガス噴出孔は、平面視して、前記ガス供給口及び前記放電空間と重複することなく、前記ガス供給口からの距離が前記放電空間よりも遠くなるように配置され、前記誘電体空間において前記放電空間から前記少なくとも一つのガス噴出孔に至る経路が活性ガス流通経路として規定され、
前記補助導電膜は、平面視して前記第1の金属電極と重複することなく前記第1の金属電極を囲み、かつ、平面視して前記活性ガス流通経路の一部と重複し、
前記活性ガス生成装置は、
前記補助導電膜の上面の一部に接触して設けられ、導電性を有する電極補助部材をさらに備え、
前記補助導電膜は前記電極補助部材を介して接地電位に設定される、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記第2の電極用誘電体膜は、平面視して外周に沿って上方が突出した突出領域を有し、
前記第1の電極用誘電体膜の下面が前記第2の電極用誘電体膜の前記突出領域の上面に接触するように、前記第1及び第2の電極用誘電体膜が積層され、前記第1の電極用誘電体膜の下面と前記第2の電極用誘電体膜の上面との間に外部から遮断された閉鎖空間が前記誘電体空間として形成される、
活性ガス生成装置。 - 請求項1または請求項2記載の活性ガス生成装置であって、
前記第2の電極構成部の下方に設けられ、前記第2の金属電極と接触して前記第2の電極構成部を支持し、導電性を有するベースフランジをさらに備え、
前記ベースフランジは、前記少なくとも一つのガス噴出孔から噴出される活性ガスを下方に噴出するための少なくとも一つのベースフランジ用ガス噴出孔を有し、
前記電極補助部材は、前記ベースフランジに電気的に接続される状態で、前記ベースフランジに固定され、
前記ベースフランジには接地電位が付与される、
活性ガス生成装置。 - 請求項3記載の活性ガス生成装置であって、
前記ベースフランジに設けられる前記少なくとも一つのベースフランジ用ガス噴出孔は、複数のベースフランジ用ガス噴出孔を含み、複数のベースフランジ用ガス噴出孔は平面視して放射状に分離配置される、
活性ガス生成装置。
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US17/416,531 US11839014B2 (en) | 2019-11-27 | 2019-11-27 | Active gas generating apparatus |
KR1020217017511A KR102524433B1 (ko) | 2019-11-27 | 2019-11-27 | 활성 가스 생성 장치 |
JP2020522880A JP6858477B1 (ja) | 2019-11-27 | 2019-11-27 | 活性ガス生成装置 |
EP19954057.6A EP3886540B1 (en) | 2019-11-27 | 2019-11-27 | Active gas generation device |
CN201980080397.0A CN113179676B (zh) | 2019-11-27 | 2019-11-27 | 活性气体生成装置 |
PCT/JP2019/046328 WO2021106100A1 (ja) | 2019-11-27 | 2019-11-27 | 活性ガス生成装置 |
TW109123064A TWI737396B (zh) | 2019-11-27 | 2020-07-08 | 活性氣體生成裝置 |
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WO2023105682A1 (ja) * | 2021-12-08 | 2023-06-15 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
JP7297399B1 (ja) * | 2022-05-18 | 2023-06-26 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
JP7493905B1 (ja) | 2023-05-01 | 2024-06-03 | 株式会社Tmeic | 活性ガス生成装置 |
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Also Published As
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TW202120742A (zh) | 2021-06-01 |
US11839014B2 (en) | 2023-12-05 |
JPWO2021106100A1 (ja) | 2021-12-02 |
EP3886540B1 (en) | 2023-05-03 |
EP3886540A1 (en) | 2021-09-29 |
US20220046781A1 (en) | 2022-02-10 |
EP3886540A4 (en) | 2022-07-06 |
JP6858477B1 (ja) | 2021-04-14 |
KR102524433B1 (ko) | 2023-04-24 |
CN113179676B (zh) | 2024-04-09 |
TWI737396B (zh) | 2021-08-21 |
KR20210087531A (ko) | 2021-07-12 |
CN113179676A (zh) | 2021-07-27 |
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