JPWO2023189039A5 - - Google Patents

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Publication number
JPWO2023189039A5
JPWO2023189039A5 JP2024511458A JP2024511458A JPWO2023189039A5 JP WO2023189039 A5 JPWO2023189039 A5 JP WO2023189039A5 JP 2024511458 A JP2024511458 A JP 2024511458A JP 2024511458 A JP2024511458 A JP 2024511458A JP WO2023189039 A5 JPWO2023189039 A5 JP WO2023189039A5
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JP
Japan
Prior art keywords
trench
nitride semiconductor
layer
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511458A
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English (en)
Japanese (ja)
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JPWO2023189039A1 (https=
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Application filed filed Critical
Priority claimed from PCT/JP2023/006474 external-priority patent/WO2023189039A1/ja
Publication of JPWO2023189039A1 publication Critical patent/JPWO2023189039A1/ja
Publication of JPWO2023189039A5 publication Critical patent/JPWO2023189039A5/ja
Pending legal-status Critical Current

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JP2024511458A 2022-03-30 2023-02-22 Pending JPWO2023189039A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022057076 2022-03-30
PCT/JP2023/006474 WO2023189039A1 (ja) 2022-03-30 2023-02-22 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189039A1 JPWO2023189039A1 (https=) 2023-10-05
JPWO2023189039A5 true JPWO2023189039A5 (https=) 2024-12-10

Family

ID=88200551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511458A Pending JPWO2023189039A1 (https=) 2022-03-30 2023-02-22

Country Status (3)

Country Link
US (1) US20250015136A1 (https=)
JP (1) JPWO2023189039A1 (https=)
WO (1) WO2023189039A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
JP2007194411A (ja) * 2006-01-19 2007-08-02 Sanyo Electric Co Ltd スイッチ集積回路装置およびその製造方法
JP4755961B2 (ja) * 2006-09-29 2011-08-24 パナソニック株式会社 窒化物半導体装置及びその製造方法
JP2008306083A (ja) * 2007-06-11 2008-12-18 Nec Corp Ｉｉｉ−ｖ族窒化物半導体電界効果型トランジスタおよびその製造方法
JP2010165987A (ja) * 2009-01-19 2010-07-29 Panasonic Corp 半導体装置及びその製造方法
JP5923712B2 (ja) * 2011-06-13 2016-05-25 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
JP7113233B2 (ja) * 2017-06-13 2022-08-05 パナソニックＩｐマネジメント株式会社 窒化物半導体装置

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