JPWO2023238745A5 - - Google Patents
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- Publication number
- JPWO2023238745A5 JPWO2023238745A5 JP2024526395A JP2024526395A JPWO2023238745A5 JP WO2023238745 A5 JPWO2023238745 A5 JP WO2023238745A5 JP 2024526395 A JP2024526395 A JP 2024526395A JP 2024526395 A JP2024526395 A JP 2024526395A JP WO2023238745 A5 JPWO2023238745 A5 JP WO2023238745A5
- Authority
- JP
- Japan
- Prior art keywords
- gate
- nitride semiconductor
- semiconductor device
- gate electrode
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 19
- 238000002161 passivation Methods 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022091655 | 2022-06-06 | ||
| PCT/JP2023/020198 WO2023238745A1 (ja) | 2022-06-06 | 2023-05-31 | 窒化物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023238745A1 JPWO2023238745A1 (https=) | 2023-12-14 |
| JPWO2023238745A5 true JPWO2023238745A5 (https=) | 2025-02-13 |
Family
ID=89118274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024526395A Pending JPWO2023238745A1 (https=) | 2022-06-06 | 2023-05-31 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023238745A1 (https=) |
| WO (1) | WO2023238745A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118299415A (zh) * | 2024-03-29 | 2024-07-05 | 厦门市三安集成电路有限公司 | 功率器件和功率器件的制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260672A (ja) * | 1996-03-25 | 1997-10-03 | Toshiba Corp | 薄膜半導体装置及び液晶表示装置 |
| JP4285120B2 (ja) * | 2003-07-10 | 2009-06-24 | セイコーエプソン株式会社 | 半導体装置、及び半導体装置の製造方法 |
| WO2022113536A1 (ja) * | 2020-11-26 | 2022-06-02 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
-
2023
- 2023-05-31 JP JP2024526395A patent/JPWO2023238745A1/ja active Pending
- 2023-05-31 WO PCT/JP2023/020198 patent/WO2023238745A1/ja not_active Ceased
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