JPWO2023276972A5 - - Google Patents

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Publication number
JPWO2023276972A5
JPWO2023276972A5 JP2023531953A JP2023531953A JPWO2023276972A5 JP WO2023276972 A5 JPWO2023276972 A5 JP WO2023276972A5 JP 2023531953 A JP2023531953 A JP 2023531953A JP 2023531953 A JP2023531953 A JP 2023531953A JP WO2023276972 A5 JPWO2023276972 A5 JP WO2023276972A5
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JP
Japan
Prior art keywords
layer
opening
nitride semiconductor
gate
electron supply
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Pending
Application number
JP2023531953A
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English (en)
Japanese (ja)
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JPWO2023276972A1 (https=
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Priority claimed from PCT/JP2022/025617 external-priority patent/WO2023276972A1/ja
Publication of JPWO2023276972A1 publication Critical patent/JPWO2023276972A1/ja
Publication of JPWO2023276972A5 publication Critical patent/JPWO2023276972A5/ja
Pending legal-status Critical Current

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JP2023531953A 2021-07-01 2022-06-27 Pending JPWO2023276972A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021110131 2021-07-01
PCT/JP2022/025617 WO2023276972A1 (ja) 2021-07-01 2022-06-27 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023276972A1 JPWO2023276972A1 (https=) 2023-01-05
JPWO2023276972A5 true JPWO2023276972A5 (https=) 2024-04-02

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ID=84689846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023531953A Pending JPWO2023276972A1 (https=) 2021-07-01 2022-06-27

Country Status (5)

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US (1) US20240120387A1 (https=)
JP (1) JPWO2023276972A1 (https=)
CN (1) CN117546303A (https=)
DE (1) DE112022002854T5 (https=)
WO (1) WO2023276972A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240105828A1 (en) * 2022-09-26 2024-03-28 Rohm Co., Ltd. Nitride semiconductor device and method for manufacturing nitride semiconductor device
TW202508052A (zh) * 2023-01-09 2025-02-16 美商高效電源轉換公司 具有均勻電場的氮化鎵(GaN)裝置
IT202300004551A1 (it) * 2023-03-10 2024-09-10 St Microelectronics Int Nv Dispositivo hemt avente migliorate prestazioni in stato acceso e relativo processo di fabbricazione
JP7703809B2 (ja) * 2023-03-30 2025-07-07 ヌヴォトンテクノロジージャパン株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048866A (ja) * 2005-08-09 2007-02-22 Toshiba Corp 窒化物半導体素子
JP6220161B2 (ja) * 2013-06-03 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP6642883B2 (ja) * 2015-10-08 2020-02-12 ローム株式会社 窒化物半導体装置およびその製造方法
JP6767741B2 (ja) * 2015-10-08 2020-10-14 ローム株式会社 窒化物半導体装置およびその製造方法
JP6974049B2 (ja) * 2017-06-28 2021-12-01 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
WO2019098193A1 (ja) * 2017-11-20 2019-05-23 ローム株式会社 半導体装置
JP7097708B2 (ja) * 2018-01-30 2022-07-08 ローム株式会社 窒化物半導体装置
JP7137947B2 (ja) * 2018-03-22 2022-09-15 ローム株式会社 窒化物半導体装置
US11908927B2 (en) * 2019-02-28 2024-02-20 Rohm Co., Ltd. Nitride semiconductor device
KR102767849B1 (ko) * 2019-12-12 2025-02-14 삼성전자주식회사 반도체 장치 및 그 제조 방법

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