CN117546303A - 氮化物半导体装置 - Google Patents

氮化物半导体装置 Download PDF

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Publication number
CN117546303A
CN117546303A CN202280044791.0A CN202280044791A CN117546303A CN 117546303 A CN117546303 A CN 117546303A CN 202280044791 A CN202280044791 A CN 202280044791A CN 117546303 A CN117546303 A CN 117546303A
Authority
CN
China
Prior art keywords
layer
opening
gate
nitride semiconductor
electron supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280044791.0A
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English (en)
Chinese (zh)
Inventor
大岳浩隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN117546303A publication Critical patent/CN117546303A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
CN202280044791.0A 2021-07-01 2022-06-27 氮化物半导体装置 Pending CN117546303A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021110131 2021-07-01
JP2021-110131 2021-07-01
PCT/JP2022/025617 WO2023276972A1 (ja) 2021-07-01 2022-06-27 窒化物半導体装置

Publications (1)

Publication Number Publication Date
CN117546303A true CN117546303A (zh) 2024-02-09

Family

ID=84689846

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280044791.0A Pending CN117546303A (zh) 2021-07-01 2022-06-27 氮化物半导体装置

Country Status (5)

Country Link
US (1) US20240120387A1 (https=)
JP (1) JPWO2023276972A1 (https=)
CN (1) CN117546303A (https=)
DE (1) DE112022002854T5 (https=)
WO (1) WO2023276972A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240105828A1 (en) * 2022-09-26 2024-03-28 Rohm Co., Ltd. Nitride semiconductor device and method for manufacturing nitride semiconductor device
TW202508052A (zh) * 2023-01-09 2025-02-16 美商高效電源轉換公司 具有均勻電場的氮化鎵(GaN)裝置
IT202300004551A1 (it) * 2023-03-10 2024-09-10 St Microelectronics Int Nv Dispositivo hemt avente migliorate prestazioni in stato acceso e relativo processo di fabbricazione
JP7703809B2 (ja) * 2023-03-30 2025-07-07 ヌヴォトンテクノロジージャパン株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048866A (ja) * 2005-08-09 2007-02-22 Toshiba Corp 窒化物半導体素子
JP6220161B2 (ja) * 2013-06-03 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP6642883B2 (ja) * 2015-10-08 2020-02-12 ローム株式会社 窒化物半導体装置およびその製造方法
JP6767741B2 (ja) * 2015-10-08 2020-10-14 ローム株式会社 窒化物半導体装置およびその製造方法
JP6974049B2 (ja) * 2017-06-28 2021-12-01 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
WO2019098193A1 (ja) * 2017-11-20 2019-05-23 ローム株式会社 半導体装置
JP7097708B2 (ja) * 2018-01-30 2022-07-08 ローム株式会社 窒化物半導体装置
JP7137947B2 (ja) * 2018-03-22 2022-09-15 ローム株式会社 窒化物半導体装置
US11908927B2 (en) * 2019-02-28 2024-02-20 Rohm Co., Ltd. Nitride semiconductor device
KR102767849B1 (ko) * 2019-12-12 2025-02-14 삼성전자주식회사 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JPWO2023276972A1 (https=) 2023-01-05
US20240120387A1 (en) 2024-04-11
WO2023276972A1 (ja) 2023-01-05
DE112022002854T5 (de) 2024-03-14

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