JPWO2023189082A5 - - Google Patents
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- Publication number
- JPWO2023189082A5 JPWO2023189082A5 JP2024511492A JP2024511492A JPWO2023189082A5 JP WO2023189082 A5 JPWO2023189082 A5 JP WO2023189082A5 JP 2024511492 A JP2024511492 A JP 2024511492A JP 2024511492 A JP2024511492 A JP 2024511492A JP WO2023189082 A5 JPWO2023189082 A5 JP WO2023189082A5
- Authority
- JP
- Japan
- Prior art keywords
- field plate
- elevation angle
- drain electrode
- insulating layer
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263324976P | 2022-03-29 | 2022-03-29 | |
| US63/324,976 | 2022-03-29 | ||
| PCT/JP2023/006838 WO2023189082A1 (ja) | 2022-03-29 | 2023-02-24 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189082A1 JPWO2023189082A1 (https=) | 2023-10-05 |
| JPWO2023189082A5 true JPWO2023189082A5 (https=) | 2024-08-16 |
| JP7575639B2 JP7575639B2 (ja) | 2024-10-29 |
Family
ID=88200564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511492A Active JP7575639B2 (ja) | 2022-03-29 | 2023-02-24 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12224331B2 (https=) |
| JP (1) | JP7575639B2 (https=) |
| CN (1) | CN118974948B (https=) |
| WO (1) | WO2023189082A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024057311A (ja) * | 2022-10-12 | 2024-04-24 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09306926A (ja) | 1996-05-10 | 1997-11-28 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2004288952A (ja) | 2003-03-24 | 2004-10-14 | Fujitsu Ltd | 電界効果トランジスタ及びその製造方法 |
| JP4968067B2 (ja) * | 2005-06-10 | 2012-07-04 | 日本電気株式会社 | 電界効果トランジスタ |
| US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
| US7709269B2 (en) * | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
| JP2008288289A (ja) * | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
| US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
| JP2011077123A (ja) | 2009-09-29 | 2011-04-14 | Oki Electric Industry Co Ltd | ゲート電極の形成方法、ＡｌＧａＮ／ＧａＮ−ＨＥＭＴの製造方法及びＡｌＧａＮ／ＧａＮ−ＨＥＭＴ |
| US8357571B2 (en) | 2010-09-10 | 2013-01-22 | Cree, Inc. | Methods of forming semiconductor contacts |
| JP6065393B2 (ja) * | 2012-03-14 | 2017-01-25 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP6522521B2 (ja) * | 2013-02-15 | 2019-05-29 | トランスフォーム インコーポレーテッド | 半導体デバイスの電極及びその製造方法 |
| JP2015195288A (ja) * | 2014-03-31 | 2015-11-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2015220430A (ja) * | 2014-05-21 | 2015-12-07 | シャープ株式会社 | 電界効果トランジスタ |
| JP2018110138A (ja) * | 2015-05-12 | 2018-07-12 | シャープ株式会社 | 電界効果トランジスタ |
| JP6408503B2 (ja) * | 2016-03-11 | 2018-10-17 | 株式会社東芝 | 半導体装置 |
| JP6472839B2 (ja) * | 2017-06-20 | 2019-02-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN109841677A (zh) | 2019-03-28 | 2019-06-04 | 英诺赛科（珠海）科技有限公司 | 高电子迁移率晶体管及其制造方法 |
| US11075271B2 (en) * | 2019-10-14 | 2021-07-27 | Cree, Inc. | Stepped field plates with proximity to conduction channel and related fabrication methods |
| US12538512B2 (en) * | 2021-10-14 | 2026-01-27 | Nxp Usa, Inc. | Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor |
-
2023
- 2023-02-24 CN CN202380030384.9A patent/CN118974948B/zh active Active
- 2023-02-24 WO PCT/JP2023/006838 patent/WO2023189082A1/ja not_active Ceased
- 2023-02-24 JP JP2024511492A patent/JP7575639B2/ja active Active
-
2024
- 2024-09-25 US US18/895,947 patent/US12224331B2/en active Active
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