JP7575639B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7575639B2
JP7575639B2 JP2024511492A JP2024511492A JP7575639B2 JP 7575639 B2 JP7575639 B2 JP 7575639B2 JP 2024511492 A JP2024511492 A JP 2024511492A JP 2024511492 A JP2024511492 A JP 2024511492A JP 7575639 B2 JP7575639 B2 JP 7575639B2
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Prior art keywords
insulating layer
field plate
drain electrode
elevation angle
sidewall
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JP2024511492A
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Japanese (ja)
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JPWO2023189082A1 (https=
JPWO2023189082A5 (https=
Inventor
克彦 川島
義則 高見
大 元嶋
裕介 神田
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/018—Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2024511492A 2022-03-29 2023-02-24 半導体装置 Active JP7575639B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263324976P 2022-03-29 2022-03-29
US63/324,976 2022-03-29
PCT/JP2023/006838 WO2023189082A1 (ja) 2022-03-29 2023-02-24 半導体装置

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JPWO2023189082A1 JPWO2023189082A1 (https=) 2023-10-05
JPWO2023189082A5 JPWO2023189082A5 (https=) 2024-08-16
JP7575639B2 true JP7575639B2 (ja) 2024-10-29

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US (1) US12224331B2 (https=)
JP (1) JP7575639B2 (https=)
CN (1) CN118974948B (https=)
WO (1) WO2023189082A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024057311A (ja) * 2022-10-12 2024-04-24 住友電気工業株式会社 半導体装置及び半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009524242A (ja) 2006-01-17 2009-06-25 クリー インコーポレイテッド 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス
JP2013191759A (ja) 2012-03-14 2013-09-26 Fujitsu Ltd 半導体装置及びその製造方法
JP2015220430A (ja) 2014-05-21 2015-12-07 シャープ株式会社 電界効果トランジスタ
JP2016511544A (ja) 2013-02-15 2016-04-14 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
JP2018110138A (ja) 2015-05-12 2018-07-12 シャープ株式会社 電界効果トランジスタ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09306926A (ja) 1996-05-10 1997-11-28 Hitachi Ltd 半導体装置およびその製造方法
JP2004288952A (ja) 2003-03-24 2004-10-14 Fujitsu Ltd 電界効果トランジスタ及びその製造方法
JP4968067B2 (ja) * 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
JP2008288289A (ja) * 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP2011077123A (ja) 2009-09-29 2011-04-14 Oki Electric Industry Co Ltd ゲート電極の形成方法、ＡｌＧａＮ／ＧａＮ−ＨＥＭＴの製造方法及びＡｌＧａＮ／ＧａＮ−ＨＥＭＴ
US8357571B2 (en) 2010-09-10 2013-01-22 Cree, Inc. Methods of forming semiconductor contacts
JP2015195288A (ja) * 2014-03-31 2015-11-05 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP6408503B2 (ja) * 2016-03-11 2018-10-17 株式会社東芝 半導体装置
JP6472839B2 (ja) * 2017-06-20 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置
CN109841677A (zh) 2019-03-28 2019-06-04 英诺赛科（珠海）科技有限公司 高电子迁移率晶体管及其制造方法
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
US12538512B2 (en) * 2021-10-14 2026-01-27 Nxp Usa, Inc. Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009524242A (ja) 2006-01-17 2009-06-25 クリー インコーポレイテッド 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス
JP2013191759A (ja) 2012-03-14 2013-09-26 Fujitsu Ltd 半導体装置及びその製造方法
JP2016511544A (ja) 2013-02-15 2016-04-14 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
JP2015220430A (ja) 2014-05-21 2015-12-07 シャープ株式会社 電界効果トランジスタ
JP2018110138A (ja) 2015-05-12 2018-07-12 シャープ株式会社 電界効果トランジスタ

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WO2023189082A1 (ja) 2023-10-05
US12224331B2 (en) 2025-02-11
JPWO2023189082A1 (https=) 2023-10-05
CN118974948B (zh) 2025-12-26
US20250022933A1 (en) 2025-01-16
CN118974948A (zh) 2024-11-15

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