JPWO2023281998A5 - - Google Patents
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- Publication number
- JPWO2023281998A5 JPWO2023281998A5 JP2023533487A JP2023533487A JPWO2023281998A5 JP WO2023281998 A5 JPWO2023281998 A5 JP WO2023281998A5 JP 2023533487 A JP2023533487 A JP 2023533487A JP 2023533487 A JP2023533487 A JP 2023533487A JP WO2023281998 A5 JPWO2023281998 A5 JP WO2023281998A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- type transistor
- semiconductor device
- layer
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021113581 | 2021-07-08 | ||
| PCT/JP2022/023968 WO2023281998A1 (ja) | 2021-07-08 | 2022-06-15 | 窒化物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023281998A1 JPWO2023281998A1 (https=) | 2023-01-12 |
| JPWO2023281998A5 true JPWO2023281998A5 (https=) | 2024-04-05 |
Family
ID=84800252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023533487A Pending JPWO2023281998A1 (https=) | 2021-07-08 | 2022-06-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240162300A1 (https=) |
| JP (1) | JPWO2023281998A1 (https=) |
| CN (1) | CN117581385A (https=) |
| DE (1) | DE112022002944T5 (https=) |
| WO (1) | WO2023281998A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240283351A1 (en) * | 2023-02-17 | 2024-08-22 | Power Integrations, Inc. | Detecting signals from cascode power devices |
| WO2024203114A1 (ja) * | 2023-03-30 | 2024-10-03 | ローム株式会社 | 窒化物半導体装置、および窒化物半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009049358A (ja) * | 2007-07-24 | 2009-03-05 | Mitsubishi Electric Corp | 半導体装置 |
| JP2011029386A (ja) * | 2009-07-24 | 2011-02-10 | Sharp Corp | 半導体装置および電子機器 |
| US8748244B1 (en) * | 2010-01-13 | 2014-06-10 | Hrl Laboratories, Llc | Enhancement and depletion mode GaN HMETs on the same substrate |
| JP2013153027A (ja) * | 2012-01-24 | 2013-08-08 | Fujitsu Ltd | 半導体装置及び電源装置 |
| US9160326B2 (en) * | 2012-07-10 | 2015-10-13 | The Hong Kong University Of Science And Technology | Gate protected semiconductor devices |
| JP6237038B2 (ja) | 2013-09-20 | 2017-11-29 | 富士通株式会社 | カスコードトランジスタ及びカスコードトランジスタの制御方法 |
| US20200083360A1 (en) * | 2018-09-10 | 2020-03-12 | Intel Corporation | Iii-n transistors with polarization modulation |
| US11380679B2 (en) * | 2018-09-25 | 2022-07-05 | Intel Corporation | FET capacitor circuit architectures for tunable load and input matching |
| JP7300840B2 (ja) * | 2019-02-04 | 2023-06-30 | ローム株式会社 | 窒化物半導体装置の製造方法 |
| TWI761704B (zh) * | 2019-09-12 | 2022-04-21 | 黃知澍 | Ga-face III族/氮化物磊晶結構及其主動元件與其閘極保護元件 |
| US11152364B1 (en) * | 2020-04-21 | 2021-10-19 | Vanguard International Semiconductor Corporation | Semiconductor structure and methods for manufacturing the same |
| WO2022000362A1 (en) * | 2020-07-01 | 2022-01-06 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
| CN116325158A (zh) * | 2020-08-05 | 2023-06-23 | 创世舫科技有限公司 | 包含耗尽层的iii族氮化物器件 |
| CN112789731A (zh) * | 2020-12-25 | 2021-05-11 | 英诺赛科(苏州)科技有限公司 | 半导体器件及其制造方法 |
-
2022
- 2022-06-15 WO PCT/JP2022/023968 patent/WO2023281998A1/ja not_active Ceased
- 2022-06-15 JP JP2023533487A patent/JPWO2023281998A1/ja active Pending
- 2022-06-15 CN CN202280045854.4A patent/CN117581385A/zh active Pending
- 2022-06-15 DE DE112022002944.7T patent/DE112022002944T5/de not_active Withdrawn
-
2023
- 2023-12-22 US US18/393,713 patent/US20240162300A1/en active Pending
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