JP2022185100A5 - - Google Patents
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- JP2022185100A5 JP2022185100A5 JP2022163051A JP2022163051A JP2022185100A5 JP 2022185100 A5 JP2022185100 A5 JP 2022185100A5 JP 2022163051 A JP2022163051 A JP 2022163051A JP 2022163051 A JP2022163051 A JP 2022163051A JP 2022185100 A5 JP2022185100 A5 JP 2022185100A5
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- JP
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- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 10
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762559378P | 2017-09-15 | 2017-09-15 | |
| US62/559,378 | 2017-09-15 | ||
| JP2020515181A JP2020534687A (ja) | 2017-09-15 | 2018-09-17 | 劈開技法を用いて基板を除去する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515181A Division JP2020534687A (ja) | 2017-09-15 | 2018-09-17 | 劈開技法を用いて基板を除去する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022185100A JP2022185100A (ja) | 2022-12-13 |
| JP2022185100A5 true JP2022185100A5 (https=) | 2023-01-06 |
Family
ID=65723150
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515181A Pending JP2020534687A (ja) | 2017-09-15 | 2018-09-17 | 劈開技法を用いて基板を除去する方法 |
| JP2022163051A Pending JP2022185100A (ja) | 2017-09-15 | 2022-10-11 | 劈開技法を用いて基板を除去する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515181A Pending JP2020534687A (ja) | 2017-09-15 | 2018-09-17 | 劈開技法を用いて基板を除去する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11508620B2 (https=) |
| EP (1) | EP3682465A4 (https=) |
| JP (2) | JP2020534687A (https=) |
| CN (1) | CN111095483B (https=) |
| WO (1) | WO2019055936A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110603651B (zh) | 2017-05-05 | 2023-07-18 | 加利福尼亚大学董事会 | 移除衬底的方法 |
| EP3682465A4 (en) | 2017-09-15 | 2021-06-02 | The Regents of The University of California | METHOD OF REMOVING A SUBSTRATE USING A SPREADING TECHNIQUE |
| WO2019191760A1 (en) * | 2018-03-30 | 2019-10-03 | The Regents Of The University Of California | Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth |
| US12087577B2 (en) | 2018-05-17 | 2024-09-10 | The Regents Of The University Of California | Method for dividing a bar of one or more devices |
| CN112204754B (zh) * | 2018-05-30 | 2024-08-13 | 加利福尼亚大学董事会 | 从半导体衬底移除半导体层的方法 |
| CN111211477B (zh) * | 2018-11-21 | 2023-07-28 | 深圳市中光工业技术研究院 | 半导体激光器及其制备方法 |
| US12417913B2 (en) | 2019-03-01 | 2025-09-16 | The Regents Of The University Of California | Method for flattening a surface on an epitaxial lateral growth layer |
| JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して１つ以上の素子のバーを除去するための方法 |
| WO2021081308A1 (en) * | 2019-10-23 | 2021-04-29 | The Regents Of The University Of California | Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth region |
| EP4053881B1 (en) * | 2019-10-29 | 2024-10-09 | Kyocera Corporation | Semiconductor element and method for producing semiconductor element |
| CN111048635B (zh) * | 2019-12-27 | 2021-06-18 | 广东省半导体产业技术研究院 | 一种芯片制备方法与待剥离芯片结构 |
| CN111129242B (zh) * | 2019-12-27 | 2021-06-18 | 广东省半导体产业技术研究院 | 一种led制备方法与待剥离led结构 |
| CN116057715A (zh) * | 2020-06-19 | 2023-05-02 | 加利福尼亚大学董事会 | 实现半导体器件的转移过程 |
| CN116325183A (zh) * | 2020-10-14 | 2023-06-23 | 苏州晶湛半导体有限公司 | 微型led结构的制作方法 |
| US20230411554A1 (en) * | 2020-10-23 | 2023-12-21 | The Regents Of The University Of California | Small size light emiting diodes fabricated via regrowth |
| CN116508137A (zh) * | 2020-10-28 | 2023-07-28 | 加利福尼亚大学董事会 | 将图案转移到发光器件的外延层的方法 |
| DE102021207298A1 (de) * | 2021-07-09 | 2023-01-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip |
| JP2024540892A (ja) * | 2021-10-22 | 2024-11-06 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 垂直共振器型面発光レーザを製作する方法 |
| WO2023153358A1 (ja) * | 2022-02-10 | 2023-08-17 | 京セラ株式会社 | レーザ素子の製造方法および製造装置 |
| CN115642211B (zh) * | 2022-10-31 | 2025-07-29 | 江苏第三代半导体研究院有限公司 | 一种Micro-LED芯片及其制作方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5194334B2 (ja) | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体デバイスの製造方法 |
| JP2007096114A (ja) * | 2005-09-29 | 2007-04-12 | Sanyo Electric Co Ltd | 半導体発光素子及び半導体発光素子の製造方法 |
| JP2010512301A (ja) * | 2006-12-12 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 様々な基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）ＮのＭ面および半極性面の結晶成長 |
| US8259769B1 (en) * | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
| US8284810B1 (en) * | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
| JP4971508B1 (ja) * | 2011-01-21 | 2012-07-11 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
| JP2013201412A (ja) | 2011-08-05 | 2013-10-03 | Mitsubishi Chemicals Corp | 半導体構造、その製造方法、および六角棒状結晶の製造方法 |
| JP5561489B2 (ja) | 2011-09-02 | 2014-07-30 | 信越半導体株式会社 | ＧａＮ自立基板の製造方法 |
| US20140339566A1 (en) * | 2011-12-14 | 2014-11-20 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP2013247362A (ja) * | 2012-05-29 | 2013-12-09 | Samsung Corning Precision Materials Co Ltd | 半導体素子用薄膜貼り合わせ基板の製造方法 |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| DE102012109594A1 (de) * | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| WO2014061906A1 (ko) | 2012-10-15 | 2014-04-24 | 서울바이오시스 주식회사 | 성장 기판 분리 방법, 발광 다이오드 제조 방법 및 그것에 의해 제조된 발광 다이오드 |
| KR102108196B1 (ko) * | 2013-04-05 | 2020-05-08 | 서울바이오시스 주식회사 | 성장 기판이 분리된 자외선 발광소자 및 그 제조 방법 |
| JP5561409B2 (ja) * | 2013-06-24 | 2014-07-30 | パナソニック株式会社 | 誘導加熱調理器 |
| US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
| US20170236807A1 (en) | 2014-10-28 | 2017-08-17 | The Regents Of The University Of California | Iii-v micro-led arrays and methods for preparing the same |
| US10050172B2 (en) * | 2015-07-01 | 2018-08-14 | Sensor Electronic Technology, Inc. | Substrate structure removal |
| JP6245239B2 (ja) * | 2015-09-11 | 2017-12-13 | 日亜化学工業株式会社 | 半導体レーザ素子の製造方法 |
| EP3682465A4 (en) | 2017-09-15 | 2021-06-02 | The Regents of The University of California | METHOD OF REMOVING A SUBSTRATE USING A SPREADING TECHNIQUE |
-
2018
- 2018-09-17 EP EP18857235.8A patent/EP3682465A4/en not_active Withdrawn
- 2018-09-17 CN CN201880060140.4A patent/CN111095483B/zh active Active
- 2018-09-17 US US16/642,298 patent/US11508620B2/en active Active
- 2018-09-17 WO PCT/US2018/051375 patent/WO2019055936A1/en not_active Ceased
- 2018-09-17 JP JP2020515181A patent/JP2020534687A/ja active Pending
-
2022
- 2022-09-15 US US17/945,717 patent/US12205847B2/en active Active
- 2022-10-11 JP JP2022163051A patent/JP2022185100A/ja active Pending
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