JP2022185100A - 劈開技法を用いて基板を除去する方法 - Google Patents
劈開技法を用いて基板を除去する方法 Download PDFInfo
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- JP2022185100A JP2022185100A JP2022163051A JP2022163051A JP2022185100A JP 2022185100 A JP2022185100 A JP 2022185100A JP 2022163051 A JP2022163051 A JP 2022163051A JP 2022163051 A JP2022163051 A JP 2022163051A JP 2022185100 A JP2022185100 A JP 2022185100A
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
本願は、以下の同時係属中かつ本発明の譲受人に譲渡された出願の35 U.S.C.Section 119(e)(米国特許法第119条(e))下の利益を主張する。
Takeshi Kamikawa、Srinivas Gandrothula、およびHongjian Liによる、「METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE」と題され、2017年9月15日に出願された米国仮特許出願第62/559,378号(弁理士整理番号第30794.0659USP1 (UC 2018-086-1)号)。
本願は、以下の同時係属中かつ本発明の譲受人に譲渡された出願に関する。
したがって、当分野において、特に、GaN薄膜がGaN基板上に成長させられる場合、III族窒化物系半導体層からIII族窒化物系基板を除去する改良された方法の必要性が、存在する。本発明は、この必要性を充足する。
本発明は、例えば、以下の項目を提供する。
(項目1)
基板を除去する方法であって、前記方法は、
基板の上または上方に成長制限マスクを形成することと、
前記成長制限マスクを使用して、前記基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含む、方法。
(項目2)
前記III族窒化物基板と、前記III族窒化物系半導体層に接触させられた前記支持基板または膜との間の熱膨張の差異によって、前記III族窒化物系半導体層に応力を生じさせることをさらに含む、項目1に記載の方法。
(項目3)
前記基板は、III族窒化物系基板または異種もしくはヘテロ基板である、項目1に記載の方法。
(項目4)
前記基板は、前記III族窒化物系半導体層が除去された後、再生利用される、項目1に記載の方法。
(項目5)
前記劈開技法は、前記基板のm面表面に対して使用される、項目1に記載の方法。
(項目6)
前記III族窒化物系半導体層は、前記基板から除去された後、劈開表面を有する、項目1に記載の方法。
(項目7)
前記劈開表面は、少なくともm面表面を備えている、項目6に記載の方法。
(項目8)
前記成長制限マスクは、前記III族窒化物系半導体層が前記基板から除去されることに先立って、少なくとも部分的に除去される、項目1に記載の方法。
(項目9)
前記成長制限マスクは、パターン化されている、項目1に記載の方法。
(項目10)
前記成長制限マスクは、複数の開口エリアを含む、項目9に記載の方法。
(項目11)
前記III族窒化物系半導体層のうちの少なくとも1つは、エピタキシャル側方過成長(ELO)によって成長させられる、項目1に記載の方法。
(項目12)
前記ELOは、前記III族窒化物系半導体層が合体する前に停止させられる、項目11に記載の方法。
(項目13)
前記基板から前記III族窒化物系半導体層をはぐことをさらに含む、項目1に記載の方法。
(項目14)
項目1に記載の方法によって製作された素子。
(項目15)
基板を除去する方法であって、前記方法は、
基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含み、
前記劈開技法は、劈開長に対して実施され、前記劈開長は、前記III族窒化物系半導体層から形成される素子のサイズより狭い、方法。
(項目16)
前記劈開技法が実施される前記基板の表面は、前記基板のm面表面である、項目15に記載の方法。
(項目17)
前記III族窒化物系半導体層は、少なくとも部分的にm面層から成る、項目15に記載の方法。
(項目18)
項目15に記載の方法によって製作された素子。
(項目19)
基板を除去する方法であって、前記方法は、
前記基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることであって、前記III族窒化物系半導体層は、犠牲層を含む、ことと、
前記犠牲層が露出させられるまで、前記III族窒化物系半導体層をエッチングすることと、
前記犠牲層を選択的にエッチングし、選択的にアンダーカットノッチを形成することと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含む、方法。
(概要)
(第1の実施形態)
具体的に、方法は、以下のステップを含む。
(1.基板、ELO+III族窒化物系半導体層)
(7.素子を分離すること)
(用語の定義)
本発明では、以下の用語が、定義される。
(III族窒化物系基板)
(成長制限マスク)
(ELO III族窒化物系層)
(追加のIII族窒化物系半導体層)
(平坦な表面領域)
(層曲がり領域)
(島状III族窒化物系半導体層)
(素子)
(ファセット)
GaN系層105、平坦な表面領域107、および層曲がり領域108を示す。図7(b)は、図7(a)の丸が付けられた部分の拡大図であり、図7(a)のELO GaN系層105上の隆起ストライプ構造701およびエッチングされたミラー領域702を示す。エッチングされたミラー領域702は、光共振長に基づいて位置する。
(支持基板)
(追加の支持基板)
(基板除去)
(支持膜)
(n電極の堆積)
(チップ分割方法)
(第2の実施形態)
(第3の実施形態)
AlGaN層105は、高いAl含有量を有する。
(第4の実施形態)
(第5の実施形態)
(第6の実施形態)
(第7の実施形態)
特に、方法は、以下のステップを含む。
(InAlGaN犠牲層)
(犠牲層のエッチング)
(InAlGaN犠牲層内のアンダーカットノッチ)
(PECエッチングによって基板を除去すること)
(プロセスステップ)
(利点および恩恵)
本発明は、いくつかの利点および恩恵を提供する。
(修正および代替)
(結論)
Claims (1)
- 本明細書に記載の発明。
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CN112204754A (zh) * | 2018-05-30 | 2021-01-08 | 加利福尼亚大学董事会 | 从半导体衬底移除半导体层的方法 |
US20220108883A1 (en) * | 2019-03-01 | 2022-04-07 | The Regents Of The University Of California | Method for flattening a surface on an epitaxial lateral growth layer |
JP2022523861A (ja) * | 2019-03-12 | 2022-04-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 支持板を使用して1つ以上の素子のバーを除去するための方法 |
US20240079856A1 (en) * | 2019-10-23 | 2024-03-07 | The Regents Of The University Of California | Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth region |
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