JP2020534687A - 劈開技法を用いて基板を除去する方法 - Google Patents
劈開技法を用いて基板を除去する方法 Download PDFInfo
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- JP2020534687A JP2020534687A JP2020515181A JP2020515181A JP2020534687A JP 2020534687 A JP2020534687 A JP 2020534687A JP 2020515181 A JP2020515181 A JP 2020515181A JP 2020515181 A JP2020515181 A JP 2020515181A JP 2020534687 A JP2020534687 A JP 2020534687A
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- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
Description
本願は、以下の同時係属中かつ本発明の譲受人に譲渡された出願の35 U.S.C.Section 119(e)(米国特許法第119条(e))下の利益を主張する。
Takeshi Kamikawa、Srinivas Gandrothula、およびHongjian Liによる、「METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE」と題され、2017年9月15日に出願された米国仮特許出願第62/559,378号(弁理士整理番号第30794.0659USP1 (UC 2018−086−1)号)。
本願は、以下の同時係属中かつ本発明の譲受人に譲渡された出願に関する。
したがって、当分野において、特に、GaN薄膜がGaN基板上に成長させられる場合、III族窒化物系半導体層からIII族窒化物系基板を除去する改良された方法の必要性が、存在する。本発明は、この必要性を充足する。
(概要)
(第1の実施形態)
具体的に、方法は、以下のステップを含む。
(1.基板、ELO+III族窒化物系半導体層)
(7.素子を分離すること)
(用語の定義)
本発明では、以下の用語が、定義される。
(III族窒化物系基板)
(成長制限マスク)
(ELO III族窒化物系層)
(追加のIII族窒化物系半導体層)
(平坦な表面領域)
(層曲がり領域)
(島状III族窒化物系半導体層)
(素子)
(ファセット)
(支持基板)
(追加の支持基板)
(基板除去)
(支持膜)
(n電極の堆積)
(チップ分割方法)
(第2の実施形態)
(第3の実施形態)
(第4の実施形態)
(第5の実施形態)
(第6の実施形態)
(第7の実施形態)
特に、方法は、以下のステップを含む。
(InAlGaN犠牲層)
(犠牲層のエッチング)
(InAlGaN犠牲層内のアンダーカットノッチ)
(PECエッチングによって基板を除去すること)
(プロセスステップ)
(利点および恩恵)
本発明は、いくつかの利点および恩恵を提供する。
(修正および代替)
(結論)
Claims (19)
- 基板を除去する方法であって、前記方法は、
基板の上または上方に成長制限マスクを形成することと、
前記成長制限マスクを使用して、前記基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含む、方法。 - 前記III族窒化物基板と、前記III族窒化物系半導体層に接触させられた前記支持基板または膜との間の熱膨張の差異によって、前記III族窒化物系半導体層に応力を生じさせることをさらに含む、請求項1に記載の方法。
- 前記基板は、III族窒化物系基板または異種もしくはヘテロ基板である、請求項1に記載の方法。
- 前記基板は、前記III族窒化物系半導体層が除去された後、再生利用される、請求項1に記載の方法。
- 前記劈開技法は、前記基板のm面表面に対して使用される、請求項1に記載の方法。
- 前記III族窒化物系半導体層は、前記基板から除去された後、劈開表面を有する、請求項1に記載の方法。
- 前記劈開表面は、少なくともm面表面を備えている、請求項6に記載の方法。
- 前記成長制限マスクは、前記III族窒化物系半導体層が前記基板から除去されることに先立って、少なくとも部分的に除去される、請求項1に記載の方法。
- 前記成長制限マスクは、パターン化されている、請求項1に記載の方法。
- 前記成長制限マスクは、複数の開口エリアを含む、請求項9に記載の方法。
- 前記III族窒化物系半導体層のうちの少なくとも1つは、エピタキシャル側方過成長(ELO)によって成長させられる、請求項1に記載の方法。
- 前記ELOは、前記III族窒化物系半導体層が合体する前に停止させられる、請求項11に記載の方法。
- 前記基板から前記III族窒化物系半導体層をはぐことをさらに含む、請求項1に記載の方法。
- 請求項1に記載の方法によって製作された素子。
- 基板を除去する方法であって、前記方法は、
基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含み、
前記劈開技法は、劈開長に対して実施され、前記劈開長は、前記III族窒化物系半導体層から形成される素子のサイズより狭い、方法。 - 前記劈開技法が実施される前記基板の表面は、前記基板のm面表面である、請求項15に記載の方法。
- 前記III族窒化物系半導体層は、少なくとも部分的にm面層から成る、請求項15に記載の方法。
- 請求項15に記載の方法によって製作された素子。
- 基板を除去する方法であって、前記方法は、
前記基板の上または上方に1つ以上のIII族窒化物系半導体層を成長させることであって、前記III族窒化物系半導体層は、犠牲層を含む、ことと、
前記犠牲層が露出させられるまで、前記III族窒化物系半導体層をエッチングすることと、
前記犠牲層を選択的にエッチングし、選択的にアンダーカットノッチを形成することと、
前記III族窒化物系半導体層を支持基板または膜に接触させることと、
劈開技法を使用して、前記基板から前記III族窒化物系半導体層を除去することと
を含む、方法。
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JP7295888B2 (ja) * | 2018-05-30 | 2023-06-21 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半導体層を半導体基板から取り外す方法 |
CN113632200A (zh) * | 2019-03-01 | 2021-11-09 | 加利福尼亚大学董事会 | 平坦化外延横向生长层上的表面的方法 |
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WO2021081308A1 (en) * | 2019-10-23 | 2021-04-29 | The Regents Of The University Of California | Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth region |
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WO2021258039A1 (en) * | 2020-06-19 | 2021-12-23 | The Regents Of The University Of California | Transfer process to realize semiconductor devices |
WO2022077254A1 (zh) * | 2020-10-14 | 2022-04-21 | 苏州晶湛半导体有限公司 | 微型led结构的制作方法 |
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