JPWO2024143377A5 - - Google Patents

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Publication number
JPWO2024143377A5
JPWO2024143377A5 JP2024567868A JP2024567868A JPWO2024143377A5 JP WO2024143377 A5 JPWO2024143377 A5 JP WO2024143377A5 JP 2024567868 A JP2024567868 A JP 2024567868A JP 2024567868 A JP2024567868 A JP 2024567868A JP WO2024143377 A5 JPWO2024143377 A5 JP WO2024143377A5
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JP
Japan
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mark
layer
semiconductor device
semiconductor
marks
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Pending
Application number
JP2024567868A
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English (en)
Japanese (ja)
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JPWO2024143377A1 (https=
Filing date
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Application filed filed Critical
Priority claimed from PCT/JP2023/046698 external-priority patent/WO2024143377A1/ja
Publication of JPWO2024143377A1 publication Critical patent/JPWO2024143377A1/ja
Publication of JPWO2024143377A5 publication Critical patent/JPWO2024143377A5/ja
Pending legal-status Critical Current

Links

JP2024567868A 2022-12-28 2023-12-26 Pending JPWO2024143377A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022212610 2022-12-28
PCT/JP2023/046698 WO2024143377A1 (ja) 2022-12-28 2023-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024143377A1 JPWO2024143377A1 (https=) 2024-07-04
JPWO2024143377A5 true JPWO2024143377A5 (https=) 2025-09-11

Family

ID=91718027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567868A Pending JPWO2024143377A1 (https=) 2022-12-28 2023-12-26

Country Status (5)

Country Link
US (1) US20250316611A1 (https=)
JP (1) JPWO2024143377A1 (https=)
CN (1) CN120435924A (https=)
DE (1) DE112023004901T5 (https=)
WO (1) WO2024143377A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3636345B2 (ja) * 2000-03-17 2005-04-06 富士電機デバイステクノロジー株式会社 半導体素子および半導体素子の製造方法
JP2007036213A (ja) * 2005-06-20 2007-02-08 Toshiba Corp 半導体素子
JP2007243092A (ja) * 2006-03-13 2007-09-20 Toyota Motor Corp 半導体装置とその製造方法
JP2014003191A (ja) * 2012-06-20 2014-01-09 Hitachi Ltd 半導体装置
US9768259B2 (en) * 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
JP2015216182A (ja) * 2014-05-09 2015-12-03 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
JP7472477B2 (ja) * 2019-12-02 2024-04-23 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素基板の製造方法
JP7540320B2 (ja) * 2020-12-11 2024-08-27 株式会社デンソー 炭化珪素半導体装置およびその製造方法

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