JPWO2024143385A5 - - Google Patents
Info
- Publication number
- JPWO2024143385A5 JPWO2024143385A5 JP2024567876A JP2024567876A JPWO2024143385A5 JP WO2024143385 A5 JPWO2024143385 A5 JP WO2024143385A5 JP 2024567876 A JP2024567876 A JP 2024567876A JP 2024567876 A JP2024567876 A JP 2024567876A JP WO2024143385 A5 JPWO2024143385 A5 JP WO2024143385A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- sic
- semiconductor device
- sic semiconductor
- extension direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022212609 | 2022-12-28 | ||
| PCT/JP2023/046706 WO2024143385A1 (ja) | 2022-12-28 | 2023-12-26 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024143385A1 JPWO2024143385A1 (https=) | 2024-07-04 |
| JPWO2024143385A5 true JPWO2024143385A5 (https=) | 2025-09-11 |
Family
ID=91718130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567876A Pending JPWO2024143385A1 (https=) | 2022-12-28 | 2023-12-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250318214A1 (https=) |
| JP (1) | JPWO2024143385A1 (https=) |
| CN (1) | CN120419308A (https=) |
| DE (1) | DE112023004912T5 (https=) |
| WO (1) | WO2024143385A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6287469B2 (ja) * | 2014-03-28 | 2018-03-07 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP5757355B2 (ja) * | 2014-04-23 | 2015-07-29 | 富士電機株式会社 | 超接合半導体装置の製造方法 |
| JP7081087B2 (ja) * | 2017-06-02 | 2022-06-07 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| JP7140642B2 (ja) * | 2018-11-15 | 2022-09-21 | トヨタ自動車株式会社 | スイッチング素子 |
| JP7293750B2 (ja) * | 2019-03-14 | 2023-06-20 | 富士電機株式会社 | 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法 |
| JP2022090527A (ja) * | 2020-12-07 | 2022-06-17 | 株式会社デンソー | 電界効果トランジスタの製造方法 |
| CN116848643A (zh) * | 2021-02-01 | 2023-10-03 | 罗姆股份有限公司 | SiC半导体装置 |
-
2023
- 2023-12-26 WO PCT/JP2023/046706 patent/WO2024143385A1/ja not_active Ceased
- 2023-12-26 DE DE112023004912.2T patent/DE112023004912T5/de active Pending
- 2023-12-26 CN CN202380088507.4A patent/CN120419308A/zh active Pending
- 2023-12-26 JP JP2024567876A patent/JPWO2024143385A1/ja active Pending
-
2025
- 2025-06-20 US US19/243,725 patent/US20250318214A1/en active Pending
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