JPWO2024143383A5 - - Google Patents
Info
- Publication number
- JPWO2024143383A5 JPWO2024143383A5 JP2024567874A JP2024567874A JPWO2024143383A5 JP WO2024143383 A5 JPWO2024143383 A5 JP WO2024143383A5 JP 2024567874 A JP2024567874 A JP 2024567874A JP 2024567874 A JP2024567874 A JP 2024567874A JP WO2024143383 A5 JPWO2024143383 A5 JP WO2024143383A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- sic
- sic layer
- sic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022212608 | 2022-12-28 | ||
| PCT/JP2023/046704 WO2024143383A1 (ja) | 2022-12-28 | 2023-12-26 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024143383A1 JPWO2024143383A1 (https=) | 2024-07-04 |
| JPWO2024143383A5 true JPWO2024143383A5 (https=) | 2025-09-11 |
Family
ID=91717832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567874A Pending JPWO2024143383A1 (https=) | 2022-12-28 | 2023-12-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250324691A1 (https=) |
| JP (1) | JPWO2024143383A1 (https=) |
| CN (1) | CN120419309A (https=) |
| DE (1) | DE112023004899T5 (https=) |
| WO (1) | WO2024143383A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6287469B2 (ja) * | 2014-03-28 | 2018-03-07 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP5757355B2 (ja) * | 2014-04-23 | 2015-07-29 | 富士電機株式会社 | 超接合半導体装置の製造方法 |
| JP7081087B2 (ja) * | 2017-06-02 | 2022-06-07 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| JP7140642B2 (ja) * | 2018-11-15 | 2022-09-21 | トヨタ自動車株式会社 | スイッチング素子 |
| JP7293750B2 (ja) * | 2019-03-14 | 2023-06-20 | 富士電機株式会社 | 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法 |
| JP2022090527A (ja) * | 2020-12-07 | 2022-06-17 | 株式会社デンソー | 電界効果トランジスタの製造方法 |
| CN116848643A (zh) * | 2021-02-01 | 2023-10-03 | 罗姆股份有限公司 | SiC半导体装置 |
-
2023
- 2023-12-26 DE DE112023004899.1T patent/DE112023004899T5/de active Pending
- 2023-12-26 WO PCT/JP2023/046704 patent/WO2024143383A1/ja not_active Ceased
- 2023-12-26 CN CN202380088399.0A patent/CN120419309A/zh active Pending
- 2023-12-26 JP JP2024567874A patent/JPWO2024143383A1/ja active Pending
-
2025
- 2025-06-23 US US19/245,480 patent/US20250324691A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022082603A5 (https=) | ||
| US8963245B2 (en) | Integrated circuit having lateral compensation component | |
| JP2010080963A (ja) | 縦型高電圧電界効果トランジスタ | |
| JP5414715B2 (ja) | 窒化物半導体ダイオード | |
| WO2016173394A1 (zh) | 一种半导体超级结功率器件及其制造方法 | |
| JP4940535B2 (ja) | 半導体装置 | |
| JP6213522B2 (ja) | 半導体装置 | |
| JP6264334B2 (ja) | 半導体装置 | |
| CN104992971B (zh) | 具有复合低k电流阻挡层的垂直氮化镓基异质结场效应管 | |
| JP2016149566A5 (ja) | 炭化珪素半導体装置 | |
| JP4865260B2 (ja) | 半導体装置 | |
| JPWO2024143383A5 (https=) | ||
| CN116344586A (zh) | 折叠沟道氮化镓基场效应晶体管及其制备方法 | |
| JP5374886B2 (ja) | 半導体装置 | |
| CN112599524B (zh) | 一种具有增强可靠性的碳化硅功率mosfet器件 | |
| JP5741642B2 (ja) | 半導体装置 | |
| JPWO2023008054A5 (https=) | ||
| JP7388027B2 (ja) | 炭化珪素半導体装置 | |
| JPWO2024143385A5 (https=) | ||
| JP2016096307A (ja) | 半導体装置 | |
| JPWO2024143379A5 (https=) | ||
| TWI670757B (zh) | 半導體裝置 | |
| JPWO2024143381A5 (https=) | ||
| JPWO2023181749A5 (https=) | ||
| CN117810251A (zh) | 功率半导体器件的终端结构、制造方法及功率器件 |