JPWO2024143381A5 - - Google Patents
Info
- Publication number
- JPWO2024143381A5 JPWO2024143381A5 JP2024567872A JP2024567872A JPWO2024143381A5 JP WO2024143381 A5 JPWO2024143381 A5 JP WO2024143381A5 JP 2024567872 A JP2024567872 A JP 2024567872A JP 2024567872 A JP2024567872 A JP 2024567872A JP WO2024143381 A5 JPWO2024143381 A5 JP WO2024143381A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- sic
- sic semiconductor
- trench structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022212613 | 2022-12-28 | ||
| PCT/JP2023/046702 WO2024143381A1 (ja) | 2022-12-28 | 2023-12-26 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024143381A1 JPWO2024143381A1 (https=) | 2024-07-04 |
| JPWO2024143381A5 true JPWO2024143381A5 (https=) | 2025-09-11 |
Family
ID=91717772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567872A Pending JPWO2024143381A1 (https=) | 2022-12-28 | 2023-12-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250318183A1 (https=) |
| JP (1) | JPWO2024143381A1 (https=) |
| CN (1) | CN120419306A (https=) |
| DE (1) | DE112023004896T5 (https=) |
| WO (1) | WO2024143381A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012142537A (ja) * | 2010-12-16 | 2012-07-26 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタとその製造方法 |
| JP7007971B2 (ja) * | 2018-03-29 | 2022-01-25 | ローム株式会社 | 半導体装置 |
| GB2590716B (en) * | 2019-12-30 | 2023-12-20 | Mqsemi Ag | Fortified trench planar MOS power transistor |
| US11961903B2 (en) * | 2020-05-26 | 2024-04-16 | Hyundai Mobis Co., Ltd. | Power semiconductor device and method of fabricating the same |
| DE112021006730T5 (de) * | 2021-02-01 | 2023-10-12 | Rohm Co., Ltd. | Sic-halbleiterbauelement |
-
2023
- 2023-12-26 JP JP2024567872A patent/JPWO2024143381A1/ja active Pending
- 2023-12-26 CN CN202380088377.4A patent/CN120419306A/zh active Pending
- 2023-12-26 WO PCT/JP2023/046702 patent/WO2024143381A1/ja not_active Ceased
- 2023-12-26 DE DE112023004896.7T patent/DE112023004896T5/de active Pending
-
2025
- 2025-06-20 US US19/243,740 patent/US20250318183A1/en active Pending
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