JPWO2023008054A5 - - Google Patents

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Publication number
JPWO2023008054A5
JPWO2023008054A5 JP2023538356A JP2023538356A JPWO2023008054A5 JP WO2023008054 A5 JPWO2023008054 A5 JP WO2023008054A5 JP 2023538356 A JP2023538356 A JP 2023538356A JP 2023538356 A JP2023538356 A JP 2023538356A JP WO2023008054 A5 JPWO2023008054 A5 JP WO2023008054A5
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JP
Japan
Prior art keywords
silicon carbide
carbide substrate
resistivity
center
downstream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023538356A
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English (en)
Japanese (ja)
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JPWO2023008054A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/025747 external-priority patent/WO2023008054A1/ja
Publication of JPWO2023008054A1 publication Critical patent/JPWO2023008054A1/ja
Publication of JPWO2023008054A5 publication Critical patent/JPWO2023008054A5/ja
Pending legal-status Critical Current

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JP2023538356A 2021-07-30 2022-06-28 Pending JPWO2023008054A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021125364 2021-07-30
PCT/JP2022/025747 WO2023008054A1 (ja) 2021-07-30 2022-06-28 炭化珪素基板

Publications (2)

Publication Number Publication Date
JPWO2023008054A1 JPWO2023008054A1 (https=) 2023-02-02
JPWO2023008054A5 true JPWO2023008054A5 (https=) 2024-04-22

Family

ID=85087897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023538356A Pending JPWO2023008054A1 (https=) 2021-07-30 2022-06-28

Country Status (3)

Country Link
US (1) US12116696B2 (https=)
JP (1) JPWO2023008054A1 (https=)
WO (1) WO2023008054A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT524251B1 (de) * 2020-09-28 2023-04-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Einkristallen
CN119041030B (zh) * 2024-11-01 2025-04-18 山东天岳先进科技股份有限公司 一种大尺寸、低电阻4h碳化硅晶棒、低电阻4h碳化硅晶片及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6235875B2 (ja) 2013-11-12 2017-11-22 一般財団法人電力中央研究所 炭化珪素単結晶の製造方法及び炭化珪素単結晶の製造装置
CN103614779B (zh) 2013-11-28 2016-03-16 中国电子科技集团公司第五十五研究所 一种提高碳化硅外延片片内n型掺杂浓度均匀性的方法
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
JP6624868B2 (ja) * 2015-09-29 2019-12-25 昭和電工株式会社 ｐ型低抵抗率炭化珪素単結晶基板
JP6678437B2 (ja) * 2015-11-26 2020-04-08 昭和電工株式会社 ＳｉＣ単結晶インゴットの製造方法及びＳｉＣ単結晶インゴット並びにＳｉＣ単結晶ウェハ
JP6852605B2 (ja) * 2017-07-13 2021-03-31 日立金属株式会社 炭化ケイ素積層基板およびその製造方法
JP7185087B1 (ja) * 2022-06-02 2022-12-06 昭和電工株式会社 ＳｉＣ基板及びＳｉＣインゴット

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