JP2017055086A - SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハの製造装置 - Google Patents
SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハの製造装置 Download PDFInfo
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Abstract
Description
すなわち、本発明は、上記課題を解決するため、以下の手順を提供する。
なお、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などは実際とは異なっていることがある。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。
また「ドーパントキャリアガス」は、ドーパントガスを含んでいるガスを意味し、ドーパントガスとキャリアガスが混ざったガスも含む。例えば、ドーパントキャリアガスが、窒素ガスのみからなってもよいし、窒素ガスと希ガス等のガスが混合したガスでもよい。
構成を理解しやすい様に、SiCエピタキシャルウェハの製造装置から説明する。図1は、本発明の一実施形態にかかるSiCエピタキシャルウェハの製造装置の断面を模式的に説明する図である。
搭載プレート10は、平面視円形状の回転台13と回転台13の中央に接続された回転軸12とからなる。回転台13には、回転台13の周方向(回転方向)に等間隔に複数並んで凹状収容部11が設けられている。図2では、凹状収容部11が等間隔に6個並んで設けられている場合を例示している。簡単のため搭載プレート10の一つの凹状収容部11にのみサテライト20を収容したが、当該構成には限られない。
搭載プレート10は、耐熱性を有していればよく、公知の材料を用いることができる。例えば、黒鉛、TaCコートした黒鉛、SiCコートした黒鉛等を用いることができる。
サテライト20は、搭載プレート10の凹状収容部11に収容されている。サテライト20は、凹状収容部11内部で回転駆動手段によって自転することができる。すなわち、サテライト20は回転軸12に対して自公転できる。サテライト20は、搭載プレート10と同様の材質を用いることができる。
シーリング50も、搭載プレート10およびサテライト20と同様に、黒鉛を材料とする基材の表面をコーティングされてなる円盤状部材である。シーリング50の表面をコーティングする被覆膜も、従来公知のTaCやSiC等を用いて形成することが可能である。
本発明のSiCエピタキシャルウェハの製造方法は、凹状収容部を有する搭載プレートと、凹状収容部内に配置され上面にSiC基板が載置されるサテライトと、を備えるSiCエピタキシャルウェハの製造方法であって、凹状収容部とサテライトの間からSiCエピタキシャルウェハの外周にドーパントガスを含んでいるドーパントキャリアガスを供給する。
図1のSiCエピタキシャルウェハの製造装置100を用いた例を基に、SiCエピタキシャルウェハの製造方法について説明する。
まず、上述のSiCエピタキシャルウェハの製造装置100のサテライト20上にSiC基板Wを載置する。
また、第2のガス供給管から供給されるドーパントキャリアガスは、ウェハに対し、ウェハの周辺部近傍から、全方向均一に供給される。これにより、ウェハの外周部に対して周方向に均一に確実にドーパントガスを供給することができる。
さらに複数のエピタキシャル層を積むような場合、それぞれのエピタキシャル層毎に、第2ガス供給管40から供給されるガスを、ドーパントガスを含まないキャリアガスをとする成長段階と、ドーパントガスを含むドーパントキャリアガスとする成長段階が交互に混在するエピタキシャル成長としてもよい。
以上は、自公転のエピタキシャル成長装置で説明したが、凹状収容部とサテライトの間から前記SiCエピタキシャルウェハの外周にドーパントガスを含むドーパントキャリアガスを供給する構成を含めば、自公転のエピタキシャル成長装置に限定されるものではない。例えばウェハが自転のみする装置であってもよいし、公転のみする装置でサテライトが浮揚しているだけの装置でもよい。
実施例1においては、まず、SiC基板(6インチ、4H−SiC−4°off基板)を準備した。またSiCエピタキシャル膜の製造装置として、6個の凹状収容部を有する搭載プレートに、6つのサテライトを設置した。そしてサテライト上に載置されたSiCウェハを自公転させながらSiCエピタキシャル膜を8〜10.5μm成長させた。第1ガス供給管からは、原料ガスとしてシラン、プロパン、キャリアガスとして水素を供給した。また第2ガス供給管からは、ドーパントガスとして窒素を含み、主として水素を含むドーパントキャリアガスを供給した。第1ガス供給管から供給したガスの総流量Aと第2ガス供給管から供給したガスの総流量Bの比(B/A)は0.0076倍であった。
またドーパントガスは、第1のガス供給管から供給される窒素ガスの量Cとし、第2のガス供給管から供給される窒素ガスの量Dの比(D/C)、すなわち、それぞれのガス供給管から供給されるガス、第1ガス供給管から流したドーパントガスの流量に対する第2ガス供給管から供給した窒素の流量の比は、0.056であった。また成膜温度は1600℃とした。
実施例2は、第2ガス供給管から供給したガスの総流量を変更した点のみが実施例1と異なる。第1ガス供給管から流したドーパントガスの流量に対する第2ガス供給管から供給した窒素の流量は、0.028倍であった。
比較例1は、ドーパントガスを第1のガス供給管からのみ流し、第2ガス供給管にはドーパントガスを含めなかった点が実施例1と異なる。その他の条件は、実施例1と同一とした。
Claims (5)
- 凹状収容部を有する搭載プレートと、前記凹状収容部内に配置され上面にSiC基板が載置されるサテライトと、を備えるSiCエピタキシャルウェハの製造方法であって、
前記凹状収容部と前記サテライトの間から前記SiCエピタキシャルウェハの外周にドーパントガスを含むドーパントキャリアガスを供給するSiCエピタキシャルウェハの製造方法。 - 前記ドーパントキャリアガスが、前記凹状収容部の底部から供給され、
前記ドーパントキャリアガスにより前記凹状収容部内で前記サテライトが回転することを特徴とする請求項1に記載のSiCエピタキシャルウェハの製造方法。 - 前記搭載プレートの上面に対して、前記SiC基板の上面の位置が同一又はそれより下方であることを特徴とする請求項1または請求項2に記載のSiCエピタキシャルウェハの製造方法。
- ドーパントガスが窒素ガスであることを特徴とする請求項1〜請求項3に記載のSiCエピタキシャルウェハの製造方法。
- SiC基板の主面上に、化学的気相成長法によってSiCエピタキシャル膜を成長させるSiCエピタキシャルウェハの製造装置であって、
凹状収容部を有する搭載プレートと、
前記凹状収容部内に配置され、上面にSiC基板が載置されるサテライトと、
前記サテライト上に載置されるSiC基板の主面上に、SiCエピタキシャル膜の原料ガスを供給する第1ガス供給管と、
前記凹状収容部内に供給口を有する第2ガス供給管と、
前記第2ガス供給管に接続され、前記第2ガス供給管にドーパントキャリアガスを含むガスを供給するガス供給部と、を有するSiCエピタキシャルウェハの製造装置。
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