JP2004088107A5 - - Google Patents

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Publication number
JP2004088107A5
JP2004088107A5 JP2003298196A JP2003298196A JP2004088107A5 JP 2004088107 A5 JP2004088107 A5 JP 2004088107A5 JP 2003298196 A JP2003298196 A JP 2003298196A JP 2003298196 A JP2003298196 A JP 2003298196A JP 2004088107 A5 JP2004088107 A5 JP 2004088107A5
Authority
JP
Japan
Prior art keywords
emitter
grading structure
bipolar transistor
base
conduction band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003298196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004088107A (ja
Filing date
Publication date
Priority claimed from US10/226,771 external-priority patent/US6768141B2/en
Application filed filed Critical
Publication of JP2004088107A publication Critical patent/JP2004088107A/ja
Publication of JP2004088107A5 publication Critical patent/JP2004088107A5/ja
Pending legal-status Critical Current

Links

JP2003298196A 2002-08-23 2003-08-22 エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ） Pending JP2004088107A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/226,771 US6768141B2 (en) 2002-08-23 2002-08-23 Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

Publications (2)

Publication Number Publication Date
JP2004088107A JP2004088107A (ja) 2004-03-18
JP2004088107A5 true JP2004088107A5 (https=) 2006-09-14

Family

ID=31188026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003298196A Pending JP2004088107A (ja) 2002-08-23 2003-08-22 エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ）

Country Status (3)

Country Link
US (1) US6768141B2 (https=)
EP (1) EP1391938A3 (https=)
JP (1) JP2004088107A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050035370A1 (en) * 2003-08-12 2005-02-17 Hrl Laboratories, Llc Semiconductor structure for a heterojunction bipolar transistor and a method of making same
US7655529B1 (en) * 2004-08-20 2010-02-02 Hrl Laboratories, Llc InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer
FR2878078B1 (fr) * 2004-11-18 2007-01-19 Cit Alcatel Transistor bipolaire et procede de fabrication de ce transistor
US7038256B1 (en) * 2004-12-03 2006-05-02 Northrop Grumman Corp. Low turn-on voltage, non-electron blocking double HBT structure
JP2006210452A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置
GB0612805D0 (en) * 2006-06-28 2006-08-09 Xact Pcb Ltd Registration system and method
US20080185038A1 (en) * 2007-02-02 2008-08-07 Emcore Corporation Inverted metamorphic solar cell with via for backside contacts
CN102646703B (zh) * 2012-05-07 2014-12-10 中国电子科技集团公司第五十五研究所 单晶InP基化合物半导体材料薄膜的外延结构
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
CN116344585B (zh) * 2023-03-29 2026-03-27 绍兴中芯集成电路制造股份有限公司 异质结双极晶体管及其制造方法
TWI848772B (zh) * 2023-07-19 2024-07-11 國立臺灣大學 異質接面雙極性電晶體與基極集極漸變層

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226358A (ja) * 1992-02-10 1993-09-03 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ
US5349201A (en) * 1992-05-28 1994-09-20 Hughes Aircraft Company NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
JP3252805B2 (ja) * 1998-08-20 2002-02-04 日本電気株式会社 バイポーラトランジスタ
US6670653B1 (en) * 1999-07-30 2003-12-30 Hrl Laboratories, Llc InP collector InGaAsSb base DHBT device and method of forming same
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
JP3341740B2 (ja) * 1999-11-15 2002-11-05 日本電気株式会社 ヘテロバイポーラ型トランジスタ及びその製造方法

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