JP2004088107A - エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ） - Google Patents

エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ） Download PDF

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Publication number
JP2004088107A
JP2004088107A JP2003298196A JP2003298196A JP2004088107A JP 2004088107 A JP2004088107 A JP 2004088107A JP 2003298196 A JP2003298196 A JP 2003298196A JP 2003298196 A JP2003298196 A JP 2003298196A JP 2004088107 A JP2004088107 A JP 2004088107A
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Japan
Prior art keywords
emitter
base
grading structure
conduction band
band energy
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JP2003298196A
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English (en)
Japanese (ja)
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JP2004088107A5 (https=
Inventor
Sandeep R Bahl
サンディープ・アール・バル
Nicolas J Moll
ニコラス・ジェイ・モール
Mark Hueschen
マーク・ヒューシェン
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Agilent Technologies Inc
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Agilent Technologies Inc
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004088107A publication Critical patent/JP2004088107A/ja
Publication of JP2004088107A5 publication Critical patent/JP2004088107A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 

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  • Bipolar Transistors (AREA)
JP2003298196A 2002-08-23 2003-08-22 エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ） Pending JP2004088107A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/226,771 US6768141B2 (en) 2002-08-23 2002-08-23 Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

Publications (2)

Publication Number Publication Date
JP2004088107A true JP2004088107A (ja) 2004-03-18
JP2004088107A5 JP2004088107A5 (https=) 2006-09-14

Family

ID=31188026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003298196A Pending JP2004088107A (ja) 2002-08-23 2003-08-22 エミッタ・ベース・グレーディング構造が改良されたヘテロ接合バイポーラ・トランジスタ（ｈｂｔ）

Country Status (3)

Country Link
US (1) US6768141B2 (https=)
EP (1) EP1391938A3 (https=)
JP (1) JP2004088107A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482643B2 (en) 2005-01-26 2009-01-27 Sony Corporation Semiconductor device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050035370A1 (en) * 2003-08-12 2005-02-17 Hrl Laboratories, Llc Semiconductor structure for a heterojunction bipolar transistor and a method of making same
US7655529B1 (en) * 2004-08-20 2010-02-02 Hrl Laboratories, Llc InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer
FR2878078B1 (fr) * 2004-11-18 2007-01-19 Cit Alcatel Transistor bipolaire et procede de fabrication de ce transistor
US7038256B1 (en) * 2004-12-03 2006-05-02 Northrop Grumman Corp. Low turn-on voltage, non-electron blocking double HBT structure
GB0612805D0 (en) * 2006-06-28 2006-08-09 Xact Pcb Ltd Registration system and method
US20080185038A1 (en) * 2007-02-02 2008-08-07 Emcore Corporation Inverted metamorphic solar cell with via for backside contacts
CN102646703B (zh) * 2012-05-07 2014-12-10 中国电子科技集团公司第五十五研究所 单晶InP基化合物半导体材料薄膜的外延结构
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
CN116344585B (zh) * 2023-03-29 2026-03-27 绍兴中芯集成电路制造股份有限公司 异质结双极晶体管及其制造方法
TWI848772B (zh) * 2023-07-19 2024-07-11 國立臺灣大學 異質接面雙極性電晶體與基極集極漸變層

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226358A (ja) * 1992-02-10 1993-09-03 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ
JPH10500257A (ja) * 1994-11-01 1998-01-06 インテバック・インコーポレイテッド ヘテロ接合エネルギー傾斜構造
JP2000068286A (ja) * 1998-08-20 2000-03-03 Nec Corp バイポーラトランジスタ
WO2001031685A2 (en) * 1999-10-28 2001-05-03 Hrl Laboratories, Llc InPSb/InAs BJT DEVICE AND METHOD OF MAKING

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349201A (en) * 1992-05-28 1994-09-20 Hughes Aircraft Company NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
US6670653B1 (en) * 1999-07-30 2003-12-30 Hrl Laboratories, Llc InP collector InGaAsSb base DHBT device and method of forming same
JP3341740B2 (ja) * 1999-11-15 2002-11-05 日本電気株式会社 ヘテロバイポーラ型トランジスタ及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226358A (ja) * 1992-02-10 1993-09-03 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ
JPH10500257A (ja) * 1994-11-01 1998-01-06 インテバック・インコーポレイテッド ヘテロ接合エネルギー傾斜構造
JP2000068286A (ja) * 1998-08-20 2000-03-03 Nec Corp バイポーラトランジスタ
WO2001031685A2 (en) * 1999-10-28 2001-05-03 Hrl Laboratories, Llc InPSb/InAs BJT DEVICE AND METHOD OF MAKING

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482643B2 (en) 2005-01-26 2009-01-27 Sony Corporation Semiconductor device

Also Published As

Publication number Publication date
EP1391938A2 (en) 2004-02-25
EP1391938A3 (en) 2005-10-26
US6768141B2 (en) 2004-07-27
US20040036082A1 (en) 2004-02-26

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