JPWO2023008054A1 - - Google Patents

Info

Publication number
JPWO2023008054A1
JPWO2023008054A1 JP2023538356A JP2023538356A JPWO2023008054A1 JP WO2023008054 A1 JPWO2023008054 A1 JP WO2023008054A1 JP 2023538356 A JP2023538356 A JP 2023538356A JP 2023538356 A JP2023538356 A JP 2023538356A JP WO2023008054 A1 JPWO2023008054 A1 JP WO2023008054A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023538356A
Other versions
JPWO2023008054A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023008054A1 publication Critical patent/JPWO2023008054A1/ja
Publication of JPWO2023008054A5 publication Critical patent/JPWO2023008054A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023538356A 2021-07-30 2022-06-28 Pending JPWO2023008054A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021125364 2021-07-30
PCT/JP2022/025747 WO2023008054A1 (ja) 2021-07-30 2022-06-28 炭化珪素基板

Publications (2)

Publication Number Publication Date
JPWO2023008054A1 true JPWO2023008054A1 (ja) 2023-02-02
JPWO2023008054A5 JPWO2023008054A5 (ja) 2024-04-22

Family

ID=85087897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023538356A Pending JPWO2023008054A1 (ja) 2021-07-30 2022-06-28

Country Status (2)

Country Link
JP (1) JPWO2023008054A1 (ja)
WO (1) WO2023008054A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103614779B (zh) * 2013-11-28 2016-03-16 中国电子科技集团公司第五十五研究所 一种提高碳化硅外延片片内n型掺杂浓度均匀性的方法
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
JP6624868B2 (ja) * 2015-09-29 2019-12-25 昭和電工株式会社 ｐ型低抵抗率炭化珪素単結晶基板
JP6678437B2 (ja) * 2015-11-26 2020-04-08 昭和電工株式会社 ＳｉＣ単結晶インゴットの製造方法及びＳｉＣ単結晶インゴット並びにＳｉＣ単結晶ウェハ
JP6852605B2 (ja) * 2017-07-13 2021-03-31 日立金属株式会社 炭化ケイ素積層基板およびその製造方法

Also Published As

Publication number Publication date
WO2023008054A1 (ja) 2023-02-02

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

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Effective date: 20240118