JPWO2023008054A1 - - Google Patents
Info
- Publication number
- JPWO2023008054A1 JPWO2023008054A1 JP2023538356A JP2023538356A JPWO2023008054A1 JP WO2023008054 A1 JPWO2023008054 A1 JP WO2023008054A1 JP 2023538356 A JP2023538356 A JP 2023538356A JP 2023538356 A JP2023538356 A JP 2023538356A JP WO2023008054 A1 JPWO2023008054 A1 JP WO2023008054A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021125364 | 2021-07-30 | ||
| PCT/JP2022/025747 WO2023008054A1 (ja) | 2021-07-30 | 2022-06-28 | 炭化珪素基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023008054A1 true JPWO2023008054A1 (https=) | 2023-02-02 |
| JPWO2023008054A5 JPWO2023008054A5 (https=) | 2024-04-22 |
Family
ID=85087897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023538356A Pending JPWO2023008054A1 (https=) | 2021-07-30 | 2022-06-28 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12116696B2 (https=) |
| JP (1) | JPWO2023008054A1 (https=) |
| WO (1) | WO2023008054A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT524251B1 (de) * | 2020-09-28 | 2023-04-15 | Ebner Ind Ofenbau | Vorrichtung zum Züchten von Einkristallen |
| CN119041030B (zh) * | 2024-11-01 | 2025-04-18 | 山东天岳先进科技股份有限公司 | 一种大尺寸、低电阻4h碳化硅晶棒、低电阻4h碳化硅晶片及制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6235875B2 (ja) | 2013-11-12 | 2017-11-22 | 一般財団法人電力中央研究所 | 炭化珪素単結晶の製造方法及び炭化珪素単結晶の製造装置 |
| CN103614779B (zh) | 2013-11-28 | 2016-03-16 | 中国电子科技集团公司第五十五研究所 | 一种提高碳化硅外延片片内n型掺杂浓度均匀性的方法 |
| JP2017055086A (ja) * | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置 |
| JP6624868B2 (ja) * | 2015-09-29 | 2019-12-25 | 昭和電工株式会社 | ｐ型低抵抗率炭化珪素単結晶基板 |
| JP6678437B2 (ja) * | 2015-11-26 | 2020-04-08 | 昭和電工株式会社 | ＳｉＣ単結晶インゴットの製造方法及びＳｉＣ単結晶インゴット並びにＳｉＣ単結晶ウェハ |
| JP6852605B2 (ja) * | 2017-07-13 | 2021-03-31 | 日立金属株式会社 | 炭化ケイ素積層基板およびその製造方法 |
| JP7185087B1 (ja) * | 2022-06-02 | 2022-12-06 | 昭和電工株式会社 | ＳｉＣ基板及びＳｉＣインゴット |
-
2022
- 2022-06-28 WO PCT/JP2022/025747 patent/WO2023008054A1/ja not_active Ceased
- 2022-06-28 US US18/291,816 patent/US12116696B2/en active Active
- 2022-06-28 JP JP2023538356A patent/JPWO2023008054A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023008054A1 (ja) | 2023-02-02 |
| US12116696B2 (en) | 2024-10-15 |
| US20240254656A1 (en) | 2024-08-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
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| A621 | Written request for application examination |
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| A711 | Notification of change in applicant |
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