JPWO2024143380A5 - - Google Patents

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Publication number
JPWO2024143380A5
JPWO2024143380A5 JP2024567871A JP2024567871A JPWO2024143380A5 JP WO2024143380 A5 JPWO2024143380 A5 JP WO2024143380A5 JP 2024567871 A JP2024567871 A JP 2024567871A JP 2024567871 A JP2024567871 A JP 2024567871A JP WO2024143380 A5 JPWO2024143380 A5 JP WO2024143380A5
Authority
JP
Japan
Prior art keywords
region
sic
semiconductor device
sic layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567871A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024143380A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/046701 external-priority patent/WO2024143380A1/ja
Publication of JPWO2024143380A1 publication Critical patent/JPWO2024143380A1/ja
Publication of JPWO2024143380A5 publication Critical patent/JPWO2024143380A5/ja
Pending legal-status Critical Current

Links

JP2024567871A 2022-12-28 2023-12-26 Pending JPWO2024143380A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022212615 2022-12-28
PCT/JP2023/046701 WO2024143380A1 (ja) 2022-12-28 2023-12-26 SiC半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024143380A1 JPWO2024143380A1 (https=) 2024-07-04
JPWO2024143380A5 true JPWO2024143380A5 (https=) 2025-09-11

Family

ID=91717771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567871A Pending JPWO2024143380A1 (https=) 2022-12-28 2023-12-26

Country Status (6)

Country Link
US (1) US20250338546A1 (https=)
EP (1) EP4645392A1 (https=)
JP (1) JPWO2024143380A1 (https=)
CN (1) CN120457786A (https=)
DE (1) DE112023004902T5 (https=)
WO (1) WO2024143380A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
US9768259B2 (en) 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
JP7263178B2 (ja) * 2019-08-02 2023-04-24 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7472477B2 (ja) * 2019-12-02 2024-04-23 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素基板の製造方法
JP7625833B2 (ja) * 2020-11-18 2025-02-04 富士電機株式会社 炭化珪素半導体装置
DE112021006730T5 (de) * 2021-02-01 2023-10-12 Rohm Co., Ltd. Sic-halbleiterbauelement

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