JPWO2023219046A5 - - Google Patents

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Publication number
JPWO2023219046A5
JPWO2023219046A5 JP2024520434A JP2024520434A JPWO2023219046A5 JP WO2023219046 A5 JPWO2023219046 A5 JP WO2023219046A5 JP 2024520434 A JP2024520434 A JP 2024520434A JP 2024520434 A JP2024520434 A JP 2024520434A JP WO2023219046 A5 JPWO2023219046 A5 JP WO2023219046A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
dummy
layer
guard ring
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024520434A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023219046A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/017197 external-priority patent/WO2023219046A1/ja
Publication of JPWO2023219046A1 publication Critical patent/JPWO2023219046A1/ja
Publication of JPWO2023219046A5 publication Critical patent/JPWO2023219046A5/ja
Pending legal-status Critical Current

Links

JP2024520434A 2022-05-12 2023-05-02 Pending JPWO2023219046A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022078855 2022-05-12
PCT/JP2023/017197 WO2023219046A1 (ja) 2022-05-12 2023-05-02 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023219046A1 JPWO2023219046A1 (https=) 2023-11-16
JPWO2023219046A5 true JPWO2023219046A5 (https=) 2025-01-23

Family

ID=88730454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024520434A Pending JPWO2023219046A1 (https=) 2022-05-12 2023-05-02

Country Status (2)

Country Link
JP (1) JPWO2023219046A1 (https=)
WO (1) WO2023219046A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124385A (ja) * 2009-12-10 2011-06-23 Sanken Electric Co Ltd 化合物半導体装置及びその製造方法
WO2016042861A1 (ja) * 2014-09-17 2016-03-24 シャープ株式会社 化合物半導体電界効果トランジスタ
JP2016131207A (ja) * 2015-01-14 2016-07-21 株式会社豊田中央研究所 集積した半導体装置
JP7216523B2 (ja) * 2018-11-12 2023-02-01 ローム株式会社 窒化物半導体装置
US20230045660A1 (en) * 2020-01-28 2023-02-09 Rohm Co., Ltd. Nitride semiconductor device
JP2021190501A (ja) * 2020-05-27 2021-12-13 ローム株式会社 窒化物半導体装置

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