JPWO2023042617A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023042617A5
JPWO2023042617A5 JP2023548380A JP2023548380A JPWO2023042617A5 JP WO2023042617 A5 JPWO2023042617 A5 JP WO2023042617A5 JP 2023548380 A JP2023548380 A JP 2023548380A JP 2023548380 A JP2023548380 A JP 2023548380A JP WO2023042617 A5 JPWO2023042617 A5 JP WO2023042617A5
Authority
JP
Japan
Prior art keywords
electrode
semiconductor layer
semiconductor device
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023548380A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023042617A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/031873 external-priority patent/WO2023042617A1/ja
Publication of JPWO2023042617A1 publication Critical patent/JPWO2023042617A1/ja
Publication of JPWO2023042617A5 publication Critical patent/JPWO2023042617A5/ja
Pending legal-status Critical Current

Links

JP2023548380A 2021-09-14 2022-08-24 Pending JPWO2023042617A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021149205 2021-09-14
PCT/JP2022/031873 WO2023042617A1 (ja) 2021-09-14 2022-08-24 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023042617A1 JPWO2023042617A1 (https=) 2023-03-23
JPWO2023042617A5 true JPWO2023042617A5 (https=) 2024-06-05

Family

ID=85602792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548380A Pending JPWO2023042617A1 (https=) 2021-09-14 2022-08-24

Country Status (4)

Country Link
US (1) US20240258389A1 (https=)
JP (1) JPWO2023042617A1 (https=)
CN (1) CN117916889A (https=)
WO (1) WO2023042617A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118136664B (zh) * 2024-05-07 2024-07-02 英诺赛科(苏州)半导体有限公司 一种半导体结构及其制备方法、半导体产品
CN121284999A (zh) * 2025-06-26 2026-01-06 厦门市三安集成电路有限公司 一种半导体芯片及应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5468761B2 (ja) * 2008-09-25 2014-04-09 古河電気工業株式会社 半導体装置、ウエハ構造体および半導体装置の製造方法
JP5608322B2 (ja) * 2008-10-21 2014-10-15 パナソニック株式会社 双方向スイッチ
JP2011124385A (ja) * 2009-12-10 2011-06-23 Sanken Electric Co Ltd 化合物半導体装置及びその製造方法
WO2012043334A1 (ja) * 2010-10-01 2012-04-05 シャープ株式会社 窒化物半導体装置
JP5607096B2 (ja) * 2012-03-23 2014-10-15 株式会社東芝 窒化物半導体装置
JPWO2016098390A1 (ja) * 2014-12-15 2017-09-07 シャープ株式会社 電界効果トランジスタ
JP6742301B2 (ja) * 2015-04-02 2020-08-19 パナソニック株式会社 窒化物半導体装置
JP6651901B2 (ja) * 2016-02-26 2020-02-19 株式会社豊田中央研究所 半導体装置
US10483356B2 (en) * 2018-02-27 2019-11-19 Siliconix Incorporated Power semiconductor device with optimized field-plate design
US20230045660A1 (en) * 2020-01-28 2023-02-09 Rohm Co., Ltd. Nitride semiconductor device

Similar Documents

Publication Publication Date Title
US10950524B2 (en) Heterojunction semiconductor device for reducing parasitic capacitance
JP5457046B2 (ja) 半導体装置
JP2011181934A (ja) デュアル・デプレションを示す高電子移動度トランジスタ及びその製造方法
WO2019187789A1 (ja) 窒化物半導体装置
US10312359B2 (en) Guard rings for cascode gallium nitride devices
TWI515903B (zh) 半導體裝置
US20200111877A1 (en) Nitride semiconductor device and method for manufacturing nitride semiconductor device
CN107768438B (zh) 半导体装置
JP7813766B2 (ja) 窒化物半導体デバイス
JP2019102756A (ja) 半導体装置
CN207458947U (zh) 半导体器件
WO2013008382A1 (ja) 窒化物半導体装置
JP7371724B2 (ja) 半導体装置とその製造方法
JP2000277733A (ja) 絶縁ゲート型電界効果トランジスタ
US8987838B2 (en) Field-effect transistor
CN104517962B (zh) 半导体装置
JPWO2023042617A5 (https=)
JP2001007322A (ja) 高破壊耐量電界効果型トランジスタ
JP4972293B2 (ja) 半導体装置およびその製造方法
JPWO2023189037A5 (https=)
WO2023203894A1 (ja) 半導体装置
JP2010192518A (ja) 半導体装置
JP5562921B2 (ja) 半導体装置
JP2024160523A (ja) 半導体装置
JP2011129616A (ja) 半導体装置