JPWO2023219046A1 - - Google Patents
Info
- Publication number
- JPWO2023219046A1 JPWO2023219046A1 JP2024520434A JP2024520434A JPWO2023219046A1 JP WO2023219046 A1 JPWO2023219046 A1 JP WO2023219046A1 JP 2024520434 A JP2024520434 A JP 2024520434A JP 2024520434 A JP2024520434 A JP 2024520434A JP WO2023219046 A1 JPWO2023219046 A1 JP WO2023219046A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/051—Manufacture or treatment of FETs having PN junction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022078855 | 2022-05-12 | ||
| PCT/JP2023/017197 WO2023219046A1 (ja) | 2022-05-12 | 2023-05-02 | 窒化物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023219046A1 true JPWO2023219046A1 (https=) | 2023-11-16 |
| JPWO2023219046A5 JPWO2023219046A5 (https=) | 2025-01-23 |
Family
ID=88730454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024520434A Pending JPWO2023219046A1 (https=) | 2022-05-12 | 2023-05-02 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023219046A1 (https=) |
| WO (1) | WO2023219046A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011124385A (ja) * | 2009-12-10 | 2011-06-23 | Sanken Electric Co Ltd | 化合物半導体装置及びその製造方法 |
| JP6227154B2 (ja) * | 2014-09-17 | 2017-11-08 | シャープ株式会社 | 化合物半導体電界効果トランジスタ |
| JP2016131207A (ja) * | 2015-01-14 | 2016-07-21 | 株式会社豊田中央研究所 | 集積した半導体装置 |
| JP7216523B2 (ja) * | 2018-11-12 | 2023-02-01 | ローム株式会社 | 窒化物半導体装置 |
| US20230045660A1 (en) * | 2020-01-28 | 2023-02-09 | Rohm Co., Ltd. | Nitride semiconductor device |
| JP2021190501A (ja) * | 2020-05-27 | 2021-12-13 | ローム株式会社 | 窒化物半導体装置 |
-
2023
- 2023-05-02 JP JP2024520434A patent/JPWO2023219046A1/ja active Pending
- 2023-05-02 WO PCT/JP2023/017197 patent/WO2023219046A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023219046A1 (ja) | 2023-11-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240927 |