JPWO2022097251A5 - - Google Patents

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JPWO2022097251A5
JPWO2022097251A5 JP2022534323A JP2022534323A JPWO2022097251A5 JP WO2022097251 A5 JPWO2022097251 A5 JP WO2022097251A5 JP 2022534323 A JP2022534323 A JP 2022534323A JP 2022534323 A JP2022534323 A JP 2022534323A JP WO2022097251 A5 JPWO2022097251 A5 JP WO2022097251A5
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impurity region
conductor layer
semiconductor
forming
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JP2022534323A
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JPWO2022097251A1 (https=
JP7251865B2 (ja
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Priority claimed from PCT/JP2020/041461 external-priority patent/WO2022097251A1/ja
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JP2022534323A 2020-11-06 2020-11-06 柱状半導体素子を用いたメモリ装置と、その製造方法 Active JP7251865B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/041461 WO2022097251A1 (ja) 2020-11-06 2020-11-06 柱状半導体素子を用いたメモリ装置と、その製造方法

Publications (3)

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JPWO2022097251A1 JPWO2022097251A1 (https=) 2022-05-12
JPWO2022097251A5 true JPWO2022097251A5 (https=) 2022-10-17
JP7251865B2 JP7251865B2 (ja) 2023-04-04

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JP2022534323A Active JP7251865B2 (ja) 2020-11-06 2020-11-06 柱状半導体素子を用いたメモリ装置と、その製造方法

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US (1) US12520479B2 (https=)
JP (1) JP7251865B2 (https=)
TW (1) TWI800947B (https=)
WO (1) WO2022097251A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117199052A (zh) * 2022-05-26 2023-12-08 长鑫存储技术有限公司 半导体结构及半导体存储器
CN117580358A (zh) 2022-08-04 2024-02-20 长鑫存储技术有限公司 一种半导体结构及其制备方法
EP4503129A4 (en) * 2022-08-19 2025-08-13 Changxin Memory Tech Inc SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP2748072B2 (ja) * 1992-07-03 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
KR100675297B1 (ko) * 2005-12-19 2007-01-29 삼성전자주식회사 캐패시터가 없는 동적 메모리 셀을 구비한 반도체 메모리장치 및 이 장치의 배치 방법
WO2009095996A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8212298B2 (en) * 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
SG166752A1 (en) * 2009-05-22 2010-12-29 Unisantis Electronics Jp Ltd Semiconductor memory device and production method therefor
US9559216B2 (en) * 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
WO2015059789A1 (ja) * 2013-10-23 2015-04-30 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP2015149413A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体記憶装置及びその製造方法
US10014316B2 (en) * 2016-10-18 2018-07-03 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US10453798B2 (en) * 2017-09-27 2019-10-22 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
US10366983B2 (en) * 2017-12-29 2019-07-30 Micron Technology, Inc. Semiconductor devices including control logic structures, electronic systems, and related methods
US20190312050A1 (en) * 2018-04-10 2019-10-10 Macronix International Co., Ltd. String select line gate oxide method for 3d vertical channel nand memory
US10763273B2 (en) * 2018-08-23 2020-09-01 Macronix International Co., Ltd. Vertical GAA flash memory including two-transistor memory cells
US11018151B2 (en) * 2018-09-26 2021-05-25 Sandisk Technologies Llc Three-dimensional flat NAND memory device including wavy word lines and method of making the same
JP2020150234A (ja) * 2019-03-15 2020-09-17 キオクシア株式会社 半導体記憶装置
US10854629B2 (en) * 2019-03-28 2020-12-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same

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