JPWO2024204492A5 - - Google Patents

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Publication number
JPWO2024204492A5
JPWO2024204492A5 JP2025511113A JP2025511113A JPWO2024204492A5 JP WO2024204492 A5 JPWO2024204492 A5 JP WO2024204492A5 JP 2025511113 A JP2025511113 A JP 2025511113A JP 2025511113 A JP2025511113 A JP 2025511113A JP WO2024204492 A5 JPWO2024204492 A5 JP WO2024204492A5
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JP
Japan
Prior art keywords
region
semiconductor device
surface layer
body region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025511113A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024204492A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/012559 external-priority patent/WO2024204492A1/ja
Publication of JPWO2024204492A1 publication Critical patent/JPWO2024204492A1/ja
Publication of JPWO2024204492A5 publication Critical patent/JPWO2024204492A5/ja
Pending legal-status Critical Current

Links

JP2025511113A 2023-03-30 2024-03-28 Pending JPWO2024204492A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023056619 2023-03-30
PCT/JP2024/012559 WO2024204492A1 (ja) 2023-03-30 2024-03-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2024204492A1 JPWO2024204492A1 (https=) 2024-10-03
JPWO2024204492A5 true JPWO2024204492A5 (https=) 2026-01-07

Family

ID=92905813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025511113A Pending JPWO2024204492A1 (https=) 2023-03-30 2024-03-28

Country Status (5)

Country Link
US (1) US20260032950A1 (https=)
JP (1) JPWO2024204492A1 (https=)
CN (1) CN121014270A (https=)
DE (1) DE112024001516T5 (https=)
WO (1) WO2024204492A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3968860B2 (ja) * 1998-03-20 2007-08-29 株式会社デンソー 炭化珪素半導体装置の製造方法
US6747312B2 (en) * 2002-05-01 2004-06-08 International Rectifier Corporation Rad hard MOSFET with graded body diode junction and reduced on resistance
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2016039263A (ja) * 2014-08-07 2016-03-22 株式会社東芝 半導体装置の製造方法

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