CN114175274A - 半导体结构及其制备方法 - Google Patents

半导体结构及其制备方法 Download PDF

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CN114175274A
CN114175274A CN201980098556.XA CN201980098556A CN114175274A CN 114175274 A CN114175274 A CN 114175274A CN 201980098556 A CN201980098556 A CN 201980098556A CN 114175274 A CN114175274 A CN 114175274A
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CN114175274B (zh
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程凯
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Enkris Semiconductor Inc
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract

本申请提供一种半导体结构及其制备方法。所述半导体结构包括：层叠设置的第一n型半导体层、p型半导体层以及第二n型半导体层，所述第一n型半导体层中设有掩埋层，所述掩埋层为AlGaN；凹槽，所述凹槽至少贯穿所述第二n型半导体层以及所述p型半导体层，且所述凹槽的下方至少留有部分所述掩埋层；设于凹槽内的栅极。所述制备方法用于制备所述半导体结构。本申请通过设置具有AlGaN的掩埋层，在接续高温生长其他半导体层的过程中，由于AlGaN在高温下不易分解，因此凹槽不会贯穿掩埋层，从而凹槽的深度不会低于具有AlGaN的掩埋层，而能够精确控制凹槽的深度。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201980098556.XA 2019-07-29 2019-07-29 半导体结构及其制备方法 Active CN114175274B (zh)

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Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060131688A1 (en) * 2003-01-31 2006-06-22 Koninklijke Philips Electronics N.V. Trench isolation structure, semiconductor assembly comprising such a trench isolation, and method for forming such a trench isolation
CN101079442A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 场效应晶体管
US20080002466A1 (en) * 2006-06-30 2008-01-03 Christoph Kleint Buried bitline with reduced resistance
CN101527427A (zh) * 2008-03-05 2009-09-09 三菱电机株式会社 半导体光元件的制造方法
JP2010232610A (ja) * 2009-03-30 2010-10-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
CN101930974A (zh) * 2009-06-17 2010-12-29 万国半导体股份有限公司 用于配置超低电压瞬态电压抑制器的底部源极n型金属氧化物半导体触发的齐纳箝位
CN102208506A (zh) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 掩埋式高亮度发光二极管结构
CN103262248A (zh) * 2010-12-10 2013-08-21 三菱电机株式会社 半导体装置及其制造方法
CN105845678A (zh) * 2015-01-30 2016-08-10 国际商业机器公司 形成半导体结构的方法及其半导体结构
CN106170832A (zh) * 2014-09-25 2016-11-30 克劳帕斯科技有限公司 交叉耦合晶闸管sram半导体结构及制造方法
CN106206711A (zh) * 2016-08-22 2016-12-07 东南大学 一种P型埋层AlGaN‑GaN高电子迁移率晶体管
US20170373177A1 (en) * 2016-06-27 2017-12-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor Device
CN107623032A (zh) * 2017-10-24 2018-01-23 电子科技大学 一种新型的GaN异质结场效应晶体管
CN109728084A (zh) * 2018-12-04 2019-05-07 电子科技大学 一种具有深槽电场屏蔽结构的平面栅igbt器件
CN110034176A (zh) * 2019-04-22 2019-07-19 东南大学 解决反向恢复失效的逆导型横向绝缘栅双极型晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311574A (ja) * 2006-05-18 2007-11-29 Nec Electronics Corp 半導体装置及びその製造方法
US8614478B2 (en) * 2010-07-26 2013-12-24 Infineon Technologies Austria Ag Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor
US8912570B2 (en) * 2012-08-09 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
TWI722166B (zh) * 2017-04-10 2021-03-21 聯穎光電股份有限公司 高電子遷移率電晶體
CN108493242B (zh) * 2018-05-31 2020-08-28 电子科技大学 一种优化体内电场的载流子增强型igbt器件

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060131688A1 (en) * 2003-01-31 2006-06-22 Koninklijke Philips Electronics N.V. Trench isolation structure, semiconductor assembly comprising such a trench isolation, and method for forming such a trench isolation
CN101079442A (zh) * 2006-05-22 2007-11-28 三菱电机株式会社 场效应晶体管
US20080002466A1 (en) * 2006-06-30 2008-01-03 Christoph Kleint Buried bitline with reduced resistance
CN101527427A (zh) * 2008-03-05 2009-09-09 三菱电机株式会社 半导体光元件的制造方法
JP2010232610A (ja) * 2009-03-30 2010-10-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
CN101930974A (zh) * 2009-06-17 2010-12-29 万国半导体股份有限公司 用于配置超低电压瞬态电压抑制器的底部源极n型金属氧化物半导体触发的齐纳箝位
CN102208506A (zh) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 掩埋式高亮度发光二极管结构
CN103262248A (zh) * 2010-12-10 2013-08-21 三菱电机株式会社 半导体装置及其制造方法
CN106170832A (zh) * 2014-09-25 2016-11-30 克劳帕斯科技有限公司 交叉耦合晶闸管sram半导体结构及制造方法
CN105845678A (zh) * 2015-01-30 2016-08-10 国际商业机器公司 形成半导体结构的方法及其半导体结构
US20170373177A1 (en) * 2016-06-27 2017-12-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor Device
CN106206711A (zh) * 2016-08-22 2016-12-07 东南大学 一种P型埋层AlGaN‑GaN高电子迁移率晶体管
CN107623032A (zh) * 2017-10-24 2018-01-23 电子科技大学 一种新型的GaN异质结场效应晶体管
CN109728084A (zh) * 2018-12-04 2019-05-07 电子科技大学 一种具有深槽电场屏蔽结构的平面栅igbt器件
CN110034176A (zh) * 2019-04-22 2019-07-19 东南大学 解决反向恢复失效的逆导型横向绝缘栅双极型晶体管

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TW202119637A (zh) 2021-05-16
TWI768410B (zh) 2022-06-21
WO2021016800A1 (zh) 2021-02-04
CN114175274B (zh) 2022-11-18
US20220246752A1 (en) 2022-08-04

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