TWI800947B - 使用柱狀半導體元件之記憶裝置及其製造方法 - Google Patents

使用柱狀半導體元件之記憶裝置及其製造方法 Download PDF

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Publication number
TWI800947B
TWI800947B TW110138012A TW110138012A TWI800947B TW I800947 B TWI800947 B TW I800947B TW 110138012 A TW110138012 A TW 110138012A TW 110138012 A TW110138012 A TW 110138012A TW I800947 B TWI800947 B TW I800947B
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TW
Taiwan
Prior art keywords
aforementioned
layer
semiconductor
layers
conductor layer
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TW110138012A
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English (en)
Chinese (zh)
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TW202224157A (zh
Inventor
原田望
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新加坡商新加坡優尼山帝斯電子私人有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW110138012A 2020-11-06 2021-10-13 使用柱狀半導體元件之記憶裝置及其製造方法 TWI800947B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2020/041461 WO2022097251A1 (ja) 2020-11-06 2020-11-06 柱状半導体素子を用いたメモリ装置と、その製造方法
WOPCT/JP2020/041461 2020-11-06

Publications (2)

Publication Number Publication Date
TW202224157A TW202224157A (zh) 2022-06-16
TWI800947B true TWI800947B (zh) 2023-05-01

Family

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TW110138012A TWI800947B (zh) 2020-11-06 2021-10-13 使用柱狀半導體元件之記憶裝置及其製造方法

Country Status (4)

Country Link
US (1) US12520479B2 (https=)
JP (1) JP7251865B2 (https=)
TW (1) TWI800947B (https=)
WO (1) WO2022097251A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117199052A (zh) * 2022-05-26 2023-12-08 长鑫存储技术有限公司 半导体结构及半导体存储器
CN117580358A (zh) 2022-08-04 2024-02-20 长鑫存储技术有限公司 一种半导体结构及其制备方法
EP4503129A4 (en) * 2022-08-19 2025-08-13 Changxin Memory Tech Inc SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201733081A (zh) * 2014-02-06 2017-09-16 東芝股份有限公司 半導體記憶裝置及其製造方法
US20180108671A1 (en) * 2016-10-18 2018-04-19 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US20190096808A1 (en) * 2017-09-27 2019-03-28 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
TW201944582A (zh) * 2018-04-10 2019-11-16 旺宏電子股份有限公司 立體垂直通道nand記憶體之串列選擇閘極的氧化方法
TW202010095A (zh) * 2018-08-23 2020-03-01 旺宏電子股份有限公司 記憶體元件及其製造方法
US20200098787A1 (en) * 2018-09-26 2020-03-26 Sandisk Technologies Llc Three-dimensional flat nand memory device including wavy word lines and method of making the same
US20200312865A1 (en) * 2019-03-28 2020-10-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same
TW202036861A (zh) * 2019-03-15 2020-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP2748072B2 (ja) * 1992-07-03 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
KR100675297B1 (ko) * 2005-12-19 2007-01-29 삼성전자주식회사 캐패시터가 없는 동적 메모리 셀을 구비한 반도체 메모리장치 및 이 장치의 배치 방법
WO2009095996A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8212298B2 (en) * 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
SG166752A1 (en) * 2009-05-22 2010-12-29 Unisantis Electronics Jp Ltd Semiconductor memory device and production method therefor
US9559216B2 (en) * 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
WO2015059789A1 (ja) * 2013-10-23 2015-04-30 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US10366983B2 (en) * 2017-12-29 2019-07-30 Micron Technology, Inc. Semiconductor devices including control logic structures, electronic systems, and related methods

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201733081A (zh) * 2014-02-06 2017-09-16 東芝股份有限公司 半導體記憶裝置及其製造方法
TW201909386A (zh) * 2014-02-06 2019-03-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202018912A (zh) * 2014-02-06 2020-05-16 日商東芝記憶體股份有限公司 半導體記憶裝置
US20180108671A1 (en) * 2016-10-18 2018-04-19 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US20190096808A1 (en) * 2017-09-27 2019-03-28 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
TW201944582A (zh) * 2018-04-10 2019-11-16 旺宏電子股份有限公司 立體垂直通道nand記憶體之串列選擇閘極的氧化方法
TW202010095A (zh) * 2018-08-23 2020-03-01 旺宏電子股份有限公司 記憶體元件及其製造方法
US20200098787A1 (en) * 2018-09-26 2020-03-26 Sandisk Technologies Llc Three-dimensional flat nand memory device including wavy word lines and method of making the same
TW202036861A (zh) * 2019-03-15 2020-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法
US20200312865A1 (en) * 2019-03-28 2020-10-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same

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Publication number Publication date
JPWO2022097251A1 (https=) 2022-05-12
JP7251865B2 (ja) 2023-04-04
WO2022097251A1 (ja) 2022-05-12
TW202224157A (zh) 2022-06-16
US20230276612A1 (en) 2023-08-31
US12520479B2 (en) 2026-01-06

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