TWI800947B - 使用柱狀半導體元件之記憶裝置及其製造方法 - Google Patents

使用柱狀半導體元件之記憶裝置及其製造方法 Download PDF

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Publication number
TWI800947B
TWI800947B TW110138012A TW110138012A TWI800947B TW I800947 B TWI800947 B TW I800947B TW 110138012 A TW110138012 A TW 110138012A TW 110138012 A TW110138012 A TW 110138012A TW I800947 B TWI800947 B TW I800947B
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TW
Taiwan
Prior art keywords
pillar
manufacturing
memory device
semiconductor element
shaped semiconductor
Prior art date
Application number
TW110138012A
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English (en)
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TW202224157A (zh
Inventor
原田望
Original Assignee
新加坡商新加坡優尼山帝斯電子私人有限公司
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Publication of TW202224157A publication Critical patent/TW202224157A/zh
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Publication of TWI800947B publication Critical patent/TWI800947B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
TW110138012A 2020-11-06 2021-10-13 使用柱狀半導體元件之記憶裝置及其製造方法 TWI800947B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/041461 2020-11-06
PCT/JP2020/041461 WO2022097251A1 (ja) 2020-11-06 2020-11-06 柱状半導体素子を用いたメモリ装置と、その製造方法

Publications (2)

Publication Number Publication Date
TW202224157A TW202224157A (zh) 2022-06-16
TWI800947B true TWI800947B (zh) 2023-05-01

Family

ID=81456983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110138012A TWI800947B (zh) 2020-11-06 2021-10-13 使用柱狀半導體元件之記憶裝置及其製造方法

Country Status (4)

Country Link
US (1) US20230276612A1 (zh)
JP (1) JP7251865B2 (zh)
TW (1) TWI800947B (zh)
WO (1) WO2022097251A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201733081A (zh) * 2014-02-06 2017-09-16 東芝股份有限公司 半導體記憶裝置及其製造方法
US20180108671A1 (en) * 2016-10-18 2018-04-19 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US20190096808A1 (en) * 2017-09-27 2019-03-28 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
TW201944582A (zh) * 2018-04-10 2019-11-16 旺宏電子股份有限公司 立體垂直通道nand記憶體之串列選擇閘極的氧化方法
TW202010095A (zh) * 2018-08-23 2020-03-01 旺宏電子股份有限公司 記憶體元件及其製造方法
US20200098787A1 (en) * 2018-09-26 2020-03-26 Sandisk Technologies Llc Three-dimensional flat nand memory device including wavy word lines and method of making the same
US20200312865A1 (en) * 2019-03-28 2020-10-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same
TW202036861A (zh) * 2019-03-15 2020-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748072B2 (ja) * 1992-07-03 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
WO2009095996A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US10366983B2 (en) 2017-12-29 2019-07-30 Micron Technology, Inc. Semiconductor devices including control logic structures, electronic systems, and related methods

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201733081A (zh) * 2014-02-06 2017-09-16 東芝股份有限公司 半導體記憶裝置及其製造方法
TW201909386A (zh) * 2014-02-06 2019-03-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202018912A (zh) * 2014-02-06 2020-05-16 日商東芝記憶體股份有限公司 半導體記憶裝置
US20180108671A1 (en) * 2016-10-18 2018-04-19 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US20190096808A1 (en) * 2017-09-27 2019-03-28 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
TW201944582A (zh) * 2018-04-10 2019-11-16 旺宏電子股份有限公司 立體垂直通道nand記憶體之串列選擇閘極的氧化方法
TW202010095A (zh) * 2018-08-23 2020-03-01 旺宏電子股份有限公司 記憶體元件及其製造方法
US20200098787A1 (en) * 2018-09-26 2020-03-26 Sandisk Technologies Llc Three-dimensional flat nand memory device including wavy word lines and method of making the same
TW202036861A (zh) * 2019-03-15 2020-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法
US20200312865A1 (en) * 2019-03-28 2020-10-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same

Also Published As

Publication number Publication date
JP7251865B2 (ja) 2023-04-04
JPWO2022097251A1 (zh) 2022-05-12
WO2022097251A1 (ja) 2022-05-12
US20230276612A1 (en) 2023-08-31
TW202224157A (zh) 2022-06-16

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