JP2020534687A - 劈開技法を用いて基板を除去する方法 - Google Patents

劈開技法を用いて基板を除去する方法 Download PDF

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Publication number
JP2020534687A
JP2020534687A JP2020515181A JP2020515181A JP2020534687A JP 2020534687 A JP2020534687 A JP 2020534687A JP 2020515181 A JP2020515181 A JP 2020515181A JP 2020515181 A JP2020515181 A JP 2020515181A JP 2020534687 A JP2020534687 A JP 2020534687A
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substrate
group iii
iii nitride
layer
semiconductor layer
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Japanese (ja)
Inventor
神川　剛
剛 神川
スリニヴァス ガンドロトゥーラ，
スリニヴァス ガンドロトゥーラ，
ホンジャン リー，
ホンジャン リー，
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University of California
University of California Los Angeles UCLA
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University of California San Diego UCSD
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2020515181A 2017-09-15 2018-09-17 劈開技法を用いて基板を除去する方法 Pending JP2020534687A (ja)

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JP2022163051A JP2022185100A (ja) 2017-09-15 2022-10-11 劈開技法を用いて基板を除去する方法

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US201762559378P 2017-09-15 2017-09-15
US62/559,378 2017-09-15
PCT/US2018/051375 WO2019055936A1 (en) 2017-09-15 2018-09-17 METHOD OF REMOVING A SUBSTRATE USING A CLEAVAGE TECHNIQUE

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EP (1) EP3682465A4 (https=)
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WO (1) WO2019055936A1 (https=)

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JP2022185100A (ja) * 2017-09-15 2022-12-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 劈開技法を用いて基板を除去する方法
JPWO2023153358A1 (https=) * 2022-02-10 2023-08-17
JP2024540892A (ja) * 2021-10-22 2024-11-06 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 垂直共振器型面発光レーザを製作する方法

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WO2019191760A1 (en) * 2018-03-30 2019-10-03 The Regents Of The University Of California Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth
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CN112204754B (zh) * 2018-05-30 2024-08-13 加利福尼亚大学董事会 从半导体衬底移除半导体层的方法
CN111211477B (zh) * 2018-11-21 2023-07-28 深圳市中光工业技术研究院 半导体激光器及其制备方法
US12417913B2 (en) 2019-03-01 2025-09-16 The Regents Of The University Of California Method for flattening a surface on an epitaxial lateral growth layer
JP2022523861A (ja) * 2019-03-12 2022-04-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 支持板を使用して１つ以上の素子のバーを除去するための方法
WO2021081308A1 (en) * 2019-10-23 2021-04-29 The Regents Of The University Of California Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth region
EP4053881B1 (en) * 2019-10-29 2024-10-09 Kyocera Corporation Semiconductor element and method for producing semiconductor element
CN111048635B (zh) * 2019-12-27 2021-06-18 广东省半导体产业技术研究院 一种芯片制备方法与待剥离芯片结构
CN111129242B (zh) * 2019-12-27 2021-06-18 广东省半导体产业技术研究院 一种led制备方法与待剥离led结构
CN116057715A (zh) * 2020-06-19 2023-05-02 加利福尼亚大学董事会 实现半导体器件的转移过程
CN116325183A (zh) * 2020-10-14 2023-06-23 苏州晶湛半导体有限公司 微型led结构的制作方法
US20230411554A1 (en) * 2020-10-23 2023-12-21 The Regents Of The University Of California Small size light emiting diodes fabricated via regrowth
CN116508137A (zh) * 2020-10-28 2023-07-28 加利福尼亚大学董事会 将图案转移到发光器件的外延层的方法
DE102021207298A1 (de) * 2021-07-09 2023-01-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip
CN115642211B (zh) * 2022-10-31 2025-07-29 江苏第三代半导体研究院有限公司 一种Micro-LED芯片及其制作方法

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JP2022185100A (ja) * 2017-09-15 2022-12-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 劈開技法を用いて基板を除去する方法
US12205847B2 (en) 2017-09-15 2025-01-21 The Regents Of The University Of California Method of removing a substrate with a cleaving technique
JP2024540892A (ja) * 2021-10-22 2024-11-06 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 垂直共振器型面発光レーザを製作する方法
JPWO2023153358A1 (https=) * 2022-02-10 2023-08-17
JP7813820B2 (ja) 2022-02-10 2026-02-13 京セラ株式会社 レーザ素子の製造方法および製造装置

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US20200203228A1 (en) 2020-06-25
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EP3682465A1 (en) 2020-07-22
CN111095483A (zh) 2020-05-01
JP2022185100A (ja) 2022-12-13
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CN111095483B (zh) 2023-11-28
US11508620B2 (en) 2022-11-22

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