JPWO2023189048A5 - - Google Patents

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Publication number
JPWO2023189048A5
JPWO2023189048A5 JP2024511465A JP2024511465A JPWO2023189048A5 JP WO2023189048 A5 JPWO2023189048 A5 JP WO2023189048A5 JP 2024511465 A JP2024511465 A JP 2024511465A JP 2024511465 A JP2024511465 A JP 2024511465A JP WO2023189048 A5 JPWO2023189048 A5 JP WO2023189048A5
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JP
Japan
Prior art keywords
layer
semiconductor device
nitride semiconductor
electron
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511465A
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English (en)
Japanese (ja)
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JPWO2023189048A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/006618 external-priority patent/WO2023189048A1/ja
Publication of JPWO2023189048A1 publication Critical patent/JPWO2023189048A1/ja
Publication of JPWO2023189048A5 publication Critical patent/JPWO2023189048A5/ja
Pending legal-status Critical Current

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JP2024511465A 2022-03-29 2023-02-24 Pending JPWO2023189048A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022053891 2022-03-29
PCT/JP2023/006618 WO2023189048A1 (ja) 2022-03-29 2023-02-24 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189048A1 JPWO2023189048A1 (https=) 2023-10-05
JPWO2023189048A5 true JPWO2023189048A5 (https=) 2024-12-10

Family

ID=88200436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511465A Pending JPWO2023189048A1 (https=) 2022-03-29 2023-02-24

Country Status (3)

Country Link
US (1) US20250015152A1 (https=)
JP (1) JPWO2023189048A1 (https=)
WO (1) WO2023189048A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20260068261A1 (en) * 2024-08-30 2026-03-05 Texas Instruments Incorporated Field plate integration for self-aligned contact and methods of manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2279806B (en) * 1993-07-05 1997-05-21 Toshiba Cambridge Res Center Semiconductor device and method of making same
JP4333652B2 (ja) * 2005-08-17 2009-09-16 沖電気工業株式会社 オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
JP2007329350A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008306083A (ja) * 2007-06-11 2008-12-18 Nec Corp Ｉｉｉ−ｖ族窒化物半導体電界効果型トランジスタおよびその製造方法
JP5564815B2 (ja) * 2009-03-31 2014-08-06 サンケン電気株式会社 半導体装置及び半導体装置の製造方法
JP5625314B2 (ja) * 2009-10-22 2014-11-19 サンケン電気株式会社 半導体装置
CN105074876A (zh) * 2013-03-19 2015-11-18 夏普株式会社 氮化物半导体器件和氮化物半导体器件的制造方法
JP7082508B2 (ja) * 2018-03-22 2022-06-08 ローム株式会社 窒化物半導体装置
US12225738B2 (en) * 2020-01-24 2025-02-11 Rohm Co., Ltd. Method for manufacturing nitride semiconductor device and nitride semiconductor device

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