WO2023189048A1 - 窒化物半導体装置 - Google Patents

窒化物半導体装置 Download PDF

Info

Publication number
WO2023189048A1
WO2023189048A1 PCT/JP2023/006618 JP2023006618W WO2023189048A1 WO 2023189048 A1 WO2023189048 A1 WO 2023189048A1 JP 2023006618 W JP2023006618 W JP 2023006618W WO 2023189048 A1 WO2023189048 A1 WO 2023189048A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
contact
electron supply
nitride semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/006618
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
学 柳原
和也 長瀬
真也 ▲高▼堂
浩隆 大嶽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024511465A priority Critical patent/JPWO2023189048A1/ja
Publication of WO2023189048A1 publication Critical patent/WO2023189048A1/ja
Priority to US18/890,816 priority patent/US20250015152A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the present disclosure relates to a nitride semiconductor device.
  • a HEMT includes an electron transit layer made of a GaN layer, an electron supply layer formed on the electron transit layer and made of an AlGaN layer, a gate layer made of a p-type GaN layer formed on the electron supply layer, and a gate layer made of a p-type GaN layer formed on the electron supply layer.
  • the semiconductor device includes a gate electrode formed on the layer, and a passivation layer covering the electron supply layer, the gate layer, and the gate electrode.
  • a highly concentrated two-dimensional electron gas (2DEG) is generated near the electron transit layer at the interface between the electron transit layer and the electron supply layer.
  • the passivation layer has source and drain openings that expose the electron supply layer.
  • the HEMT further includes a source electrode in ohmic contact with the 2DEG through the electron supply layer exposed by the source opening, and a drain electrode in ohmic contact with the 2DEG through the electron supply layer exposed by the drain opening.
  • a nitride semiconductor device includes an electron transit layer, an electron supply layer formed on the electron transit layer and having a larger band gap than the electron transit layer, and an electron supply layer formed on the electron transit layer.
  • a dielectric layer and an electrode having a contact portion electrically in contact with the electron supply layer through at least an opening penetrating the dielectric layer, the contact portion being in contact with the electron transport layer.
  • an inclined surface that is inclined so that the width becomes narrower toward the electron transport layer; a tip surface that is in contact with the bottom surface of the opening; It has a curved surface curved to be convex.
  • an increase in contact resistance between the electrode and the 2DEG can be suppressed.
  • FIG. 1 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the first embodiment.
  • FIG. 2 is a partially enlarged sectional view of the nitride semiconductor device of FIG.
  • FIG. 3 is a schematic cross-sectional view showing an exemplary manufacturing process of the nitride semiconductor device of FIG.
  • FIG. 4 is a schematic cross-sectional view showing the manufacturing process following FIG. 3.
  • FIG. 5 is a schematic cross-sectional view showing the manufacturing process following FIG. 4.
  • FIG. 6 is a schematic cross-sectional view showing the manufacturing process following FIG. 5.
  • FIG. 7 is a schematic cross-sectional view showing the manufacturing process following FIG. 6.
  • FIG. 8 is a schematic cross-sectional view showing the manufacturing process following FIG. 7.
  • FIG. 1 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the first embodiment.
  • FIG. 2 is a partially enlarged sectional view of the nitride semiconductor device of FIG.
  • FIG. 9 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to a comparative example.
  • FIG. 10 is a graph showing the relationship between the position of the tip surface of the contact portion of the electrode and the contact resistance.
  • FIG. 11 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the second embodiment.
  • FIG. 12 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the third embodiment.
  • FIG. 13 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the fourth embodiment.
  • FIG. 14 is a schematic cross-sectional view of an exemplary nitride semiconductor device according to the fifth embodiment.
  • FIG. 15 is a schematic plan view showing an exemplary formation pattern of the nitride semiconductor device of FIG. 14.
  • FIG. 16 is a schematic cross-sectional view of a nitride semiconductor device according to a modification example.
  • FIG. 17 is a schematic cross-sectional view of a nitride semiconductor device according to a modification example.
  • FIG. 1 shows a schematic cross-sectional structure of an exemplary nitride semiconductor device 10 according to the first embodiment.
  • the term "planar view” used in the present disclosure refers to viewing the nitride semiconductor device 10 in the Z-axis direction of the mutually orthogonal XYZ axes shown in FIG.
  • the +Z direction is defined as top, the -Z direction as bottom, the +X direction as right, and the -X direction as left.
  • planear view refers to viewing nitride semiconductor device 10 from above along the Z-axis.
  • a III-V group semiconductor is used in the nitride semiconductor device 10.
  • a group III nitride semiconductor is used as the group III-V semiconductor.
  • Group III nitride semiconductors are III-V group semiconductors that use nitrogen as a group V element, and representative examples include gallium nitride (GaN), aluminum nitride (AlN), and indium nitride (InN). Generally, it can be expressed as Al x In y Ga 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • the nitride semiconductor device 10 includes a substrate 12, a buffer layer 14 formed on the substrate 12, an electron transit layer 16 formed on the buffer layer 14, and an electron supply layer 18 formed on the electron transit layer 16. and, including.
  • a silicon (Si) substrate can be used.
  • a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, or a sapphire substrate can be used instead of the Si substrate.
  • the thickness of the substrate 12 can be, for example, 200 ⁇ m or more and 1500 ⁇ m or less. In the following description, unless explicitly stated otherwise, thickness refers to the dimension along the Z-axis direction in FIG. 1.
  • the buffer layer 14 is located between the substrate 12 and the electron transit layer 16 and may be made of any material that can alleviate the lattice mismatch between the substrate 12 and the electron transit layer 16. Additionally, buffer layer 14 can include one or more nitride semiconductor layers. Buffer layer 14 may include, for example, at least one of an AlN layer, an aluminum gallium nitride (AlGaN) layer, and a graded AlGaN layer having a different aluminum (Al) composition.
  • AlGaN aluminum gallium nitride
  • the buffer layer 14 is made of a single film of AlN, a single film of AlGaN, a film having an AlGaN/GaN superlattice structure, a film having an AlN/AlGaN superlattice structure, a film having an AlN/GaN superlattice structure, or the like. may have been done.
  • the buffer layer 14 includes a first buffer layer that is an AlN layer formed on the substrate 12 and a second buffer layer that is an AlGaN layer formed on the AlN layer (first buffer layer). I can do it.
  • the first buffer layer may be, for example, an AlN layer with a thickness of 200 nm
  • the second buffer layer may be a graded AlGaN layer, for example, with a thickness of 300 nm.
  • impurities may be introduced into a portion of the buffer layer 14 to make the buffer layer 14 semi-insulating except for the surface layer region.
  • the impurity is, for example, carbon (C) or iron (Fe).
  • the impurity concentration can be, for example, 4 ⁇ 10 16 cm ⁇ 3 or higher.
  • the thickness of the buffer layer 14 may be thicker than 500 nm. In one example, the thickness of buffer layer 14 is 1500 nm.
  • the electron transit layer 16 is made of a nitride semiconductor.
  • the electron transit layer 16 may be, for example, a GaN layer.
  • the thickness of the electron transit layer 16 can be, for example, 0.5 ⁇ m or more and 2 ⁇ m or less. In one example, the thickness of the electron transit layer 16 is 1 ⁇ m.
  • Electron transit layer 16 includes a front surface 16A and a back surface 16B opposite to the front surface 16A. The back surface 16B is in contact with the buffer layer 14. Surface 16A is in contact with electron supply layer 18.
  • the impurity is, for example, C.
  • the impurity concentration can be, for example, 4 ⁇ 10 16 cm ⁇ 3 or more.
  • the electron transit layer 16 can include a plurality of GaN layers having different impurity concentrations, for example, a C-doped GaN layer and a non-doped GaN layer. In this case, a C-doped GaN layer is formed on the buffer layer 14.
  • the C-doped GaN layer can have a thickness of 0.5 ⁇ m or more and 2 ⁇ m or less.
  • the C concentration in the C-doped GaN layer can be set to 5 ⁇ 10 17 cm ⁇ 3 or more and 9 ⁇ 10 19 cm ⁇ 3 or less.
  • the non-doped GaN layer is formed on the C-doped GaN layer.
  • the undoped GaN layer can have a thickness of 0.05 ⁇ m or more and 0.4 ⁇ m or less.
  • the non-doped GaN layer is in contact with the electron supply layer 18.
  • the electron transit layer 16 includes a C-doped GaN layer with a thickness of 0.9 ⁇ m and a non-doped GaN layer with a thickness of 0.1 ⁇ m.
  • the C concentration in the C-doped GaN layer is approximately 1 ⁇ 10 18 cm ⁇ 3 .
  • the electron supply layer 18 is made of a nitride semiconductor having a larger band gap than the electron transit layer 16.
  • the electron supply layer 18 may be, for example, an AlGaN layer.
  • the electron supply layer 18, which is an AlGaN layer has a larger band gap than the electron transit layer 16, which is a GaN layer.
  • the electron supply layer 18 is composed of Al x Ga 1-x N.
  • the electron supply layer 18 can be said to be an Al x Ga 1-x N layer.
  • x is 0 ⁇ x ⁇ 0.4, preferably 0.1 ⁇ x ⁇ 0.3, more preferably 0.2 ⁇ x ⁇ 0.3. Note that the range of x in the Al x Ga 1-x N layer as the electron supply layer 18 can be changed arbitrarily.
  • the electron supply layer 18 includes a front surface 18A and a back surface 18B opposite to the front surface 18A.
  • the back surface 18B is in contact with the electron transit layer 16.
  • Surface 18A is in contact with dielectric layer 22.
  • the electron supply layer 18 can have a thickness of, for example, 5 nm or more and 20 nm or less. In one example, the thickness of the electron supply layer 18 is about 10 nm.
  • the electron transit layer 16 and the electron supply layer 18 have different lattice constants in the bulk region. Therefore, the electron transit layer 16 and the electron supply layer 18 are a lattice mismatched junction.
  • the heterojunction interface between the electron transit layer 16 and the electron supply layer 18 is caused by the spontaneous polarization of the electron transit layer 16 and the electron supply layer 18 and the piezo polarization caused by the compressive stress that the heterojunction of the electron transit layer 16 receives.
  • the energy level of the conduction band of the electron transport layer 16 in the vicinity is lower than the Fermi level.
  • a two-dimensional electron gas (2DEG) 20 spreads within the electron transit layer 16 at a position close to the heterojunction interface between the electron transit layer 16 and the electron supply layer 18 (for example, at a distance of several nm from the interface).
  • the concentration of 2DEG20 is, for example, about 1 ⁇ 10 13 cm ⁇ 2 , although it is not particularly limited.
  • Nitride semiconductor device 10 further includes a dielectric layer 22, an insulating layer 24, and an electrode 30.
  • Dielectric layer 22 is formed on electron supply layer 18 . It can also be said that the dielectric layer 22 covers the electron supply layer 18.
  • the dielectric layer 22 is made of, for example, one of silicon nitride (SiN), silicon dioxide (SiO 2 ), silicon oxynitride (SiON), alumina (Al 2 O 3 ), AlN, and aluminum oxynitride (AlON). It can be constructed from a material containing.
  • dielectric layer 22 is formed of a material containing SiN.
  • the dielectric layer 22 can also be said to be a passivation layer.
  • the thickness of the dielectric layer 22 is thicker than the thickness of the electron supply layer 18. In one example, the thickness of dielectric layer 22 is approximately 100 nm. Note that the thickness of the dielectric layer 22 can be changed arbitrarily.
  • the electrode 30 includes a contact portion 32 that is in electrical contact with the electron supply layer 18 through at least an opening 50 penetrating the dielectric layer 22, and a wiring portion 34 formed on the dielectric layer 22.
  • the contact portion 32 is in ohmic contact with the 2DEG 20 through the opening 50. Therefore, the electrode 30 can also be said to be an ohmic electrode.
  • the wiring portion 34 is formed to protrude from the opening 50 in the width direction of the electrode 30 (X-axis direction in FIG. 1). The wiring portion 34 is located inside the outer periphery (not shown) of the dielectric layer 22, the electron supply layer 18, etc. in plan view.
  • a recessed portion 36 that is recessed toward the electron supply layer 18 is formed in a portion of the wiring portion 34 that corresponds to the contact portion 32 .
  • a bottom surface 36A of the recess 36 is located on the opposite side of the dielectric layer 22 from the electron supply layer 18. The recess 36 is formed at a position overlapping the opening 50 in plan view.
  • the electrode 30 has an electrode layer 40, a first barrier layer 42, and a second barrier layer 44.
  • the electrode 30 has a laminated structure of an electrode layer 40, a first barrier layer 42, and a second barrier layer 44.
  • the contact portion 32 is composed of only the electrode layer 40.
  • the wiring section 34 has a laminated structure of an electrode layer 40, a first barrier layer 42, and a second barrier layer 44.
  • the first barrier layer 42 is formed on the dielectric layer 22.
  • the first barrier layer 42 may be made of a material containing any one of titanium nitride (TiN), tungsten silicon nitride (WSiN), and tungsten nitride (WN).
  • TiN titanium nitride
  • WSiN tungsten silicon nitride
  • WN tungsten nitride
  • the first barrier layer 42 is formed of a material containing TiN.
  • the thickness of the first barrier layer 42 is thinner than the thickness of the dielectric layer 22. In one example, the thickness of the first barrier layer 42 is approximately 50 nm.
  • the electrode layer 40 includes a portion formed on the first barrier layer 42.
  • the electrode layer 40 includes a portion provided between a first barrier layer 42 and a second barrier layer 44 . Therefore, it can be said that the first barrier layer 42 is interposed between the dielectric layer 22 and the electrode layer 40.
  • the electrode layer 40 contains at least Ti and Al.
  • the electrode layer 40 may contain, for example, AlCu and Ti.
  • the electrode layer 40 is composed of one or more metal layers.
  • the electrode layer 40 has a stacked structure of a first metal layer, a second metal layer, and a third metal layer.
  • the first metal layer is made of a material containing Ti, for example.
  • the thickness of the first metal layer is approximately 20 nm.
  • the second metal layer is formed on the first metal layer.
  • the second metal layer is made of a material containing AlCu.
  • the second metal layer is, for example, an alloy containing approximately 1% or less of Cu to Al.
  • the thickness of the second metal layer is approximately 200 nm.
  • the third metal layer is formed on the second metal layer.
  • the third metal layer is made of a material containing Ti.
  • the electrode layer 40 contains at least Ti, Al, and Cu. Therefore, it can be said that the electrode 30 contains at least Ti, Al, and Cu.
  • the thickness of the third metal layer is approximately 20 nm.
  • the thickness of the electrode layer 40 is greater than the thickness of the first barrier layer 42 and the thickness of the dielectric layer 22.
  • the second barrier layer 44 is provided on the side of the wiring section 34 opposite to the first barrier layer 42.
  • the second barrier layer 44 is formed along the recess 36 of the wiring section 34.
  • the second barrier layer 44 may be made of a material containing any one of TiN, WSiN, and WN.
  • the second barrier layer 44 is formed of a material containing TiN. That is, the second barrier layer 44 is formed of the same material as the first barrier layer 42.
  • the thickness of the second barrier layer 44 is, for example, equal to the thickness of the first barrier layer 42. In one example, the thickness of the second barrier layer 44 is approximately 50 nm.
  • the thickness of the second barrier layer 44 varies.
  • the thickness of the portion of the second barrier layer 44 that overlaps with the first barrier layer 42 in plan view is about 50 nm.
  • the outer surface 34A of the wiring portion 34 is inclined so that the width becomes narrower as it moves away from the dielectric layer 22 in the Z-axis direction. More specifically, each of the outer surface 42A of the first barrier layer 42, the outer surface 40A of the electrode layer 40 in the wiring section 34, and the outer surface 44A of the second barrier layer 44 is separated from the dielectric layer 22 in the Z-axis direction. It slopes so that the width becomes narrower as you move away from it.
  • the angle of inclination of the outer surface 42A of the first barrier layer 42 with respect to the Z-axis direction and the angle of inclination of the outer surface 40A of the electrode layer 40 with respect to the Z-axis direction are equal to each other.
  • outer surface 42A and the outer surface 40A are continuous so as to be flush with each other.
  • the angle of inclination of the second barrier layer 44 with respect to the Z-axis direction is greater than the angle of inclination of the outer surface 40A of the electrode layer 40 with respect to the Z-axis direction.
  • the insulating layer 24 is formed to cover the wiring portion 34 of the electrode 30 and the portion of the dielectric layer 22 exposed from the electrode 30. Therefore, the insulating layer 24 is formed on the second barrier layer 44.
  • the insulating layer 24 also includes an outer surface 40A of the electrode layer 40 in the wiring section 34, an outer surface 42A of the first barrier layer 42, an outer surface 44A of the second barrier layer 44, and a surface 22A of the dielectric layer 22. is in contact with
  • the insulating layer 24 is formed of a material containing, for example, SiO 2 . Note that the material constituting the insulating layer 24 can be changed arbitrarily, and may be SiON or SiN, for example.
  • the length L2 of the wiring portion 34 in the X-axis direction is at least twice the length L1 of the tip portion 32P of the contact portion 32 in the X-axis direction.
  • the length L2 of the wiring section 34 in the X-axis direction indicates the maximum length of the wiring section 34 in the X-axis direction. That is, the length L2 can be defined by the length in the X-axis direction of the portion of the outer surface 42A of the first barrier layer 42 that is in contact with the dielectric layer 22.
  • the length L1 of the tip portion 32P of the contact portion 32 in the X-axis direction can be defined by the width of the contact portion 32 at the interface between the dielectric layer 22 and the electron supply layer 18 in the Z-axis direction.
  • FIG. 2 shows a portion of the opening 50 and the contact portion 32 in FIG. 1 in an enlarged manner.
  • the opening 50 is also formed in at least a portion of the electron supply layer 18 by penetrating the dielectric layer 22. More specifically, the opening 50 includes a penetration section 52 that penetrates the dielectric layer 22 and a recess section 54 that is continuous with the penetration section 52 and provided in the electron supply layer 18 .
  • the contact portion 32 is formed from the electrode layer 40 and the contact portion 32 penetrates the first barrier layer 42, so the opening 50 has a barrier-side penetration portion 56 that penetrates the first barrier layer 42. That is, in the first embodiment, the contact portion 32 penetrates both the first barrier layer 42 and the dielectric layer 22. On the other hand, the contact portion 32 does not penetrate the electron supply layer 18.
  • the barrier-side penetration portion 56 is constituted by an inner surface 42B that constitutes an opening formed in the first barrier layer 42.
  • the inner surface 42B is inclined so that the opening width of the barrier-side penetration portion 56 becomes narrower toward the electron transit layer 16.
  • the opening width of the barrier-side penetration part 56 can be defined by the size of the barrier-side penetration part 56 in the X-axis direction.
  • the penetrating portion 52 is constituted by an inner surface 22B that constitutes an opening formed in the dielectric layer 22.
  • the inner surface 22B is inclined so that the width of the penetration portion 52 becomes narrower toward the electron transit layer 16.
  • the opening width of the penetrating portion 52 can be defined by the size of the penetrating portion 52 in the X-axis direction.
  • the angle of inclination of the inner surface 22B with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 42B of the first barrier layer 42 with respect to the Z-axis direction.
  • the inner surface 22B and the inner surface 42B are continuous so as to be flush with each other.
  • the recess portion 54 includes a recess bottom surface 18C formed in the electron supply layer 18, and recess curved surfaces 18D formed at both ends of the recess bottom surface 18C in the X-axis direction. Further, the recess portion 54 includes a recess slope 18E that continues on the side opposite to the recess bottom surface 18C with respect to the recess curved surface 18D.
  • the recess bottom surface 18C is arranged closer to the back surface 18B with respect to the front surface 18A of the electron supply layer 18.
  • the recess bottom surface 18C is arranged closer to the back surface 18B than the center of the electron supply layer 18 in the thickness direction (Z-axis direction).
  • the recess bottom surface 18C extends along the X-axis direction.
  • the recess bottom surface 18C constitutes the bottom surface of the opening 50.
  • the recessed curved surface 18D is curved so as to be recessed toward the electron transit layer 16. That is, the center of curvature of the recess curved surface 18D is located on the dielectric layer 22 side with respect to the recess bottom surface 18C.
  • the recessed inclined surface 18E is inclined so that the opening width of the opening 50 becomes narrower toward the recessed curved surface 18D.
  • the opening width of the opening 50 can be defined by the size of the opening 50 in the X-axis direction.
  • the angle of inclination of the recessed slope 18E with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction.
  • the recessed inclined surface 18E and the inner surface 22B are continuous so as to be flush with each other.
  • both the angle of inclination of the recessed slope 18E with respect to the Z-axis direction and the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction are 10° or more and 20° or less.
  • both the angle of inclination of the recessed slope 18E with respect to the Z-axis direction and the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction are 15 degrees.
  • the contact portion 32 of the electrode 30 is embedded in the opening 50.
  • the contact portion 32 is a portion of the electrode 30 that is closer to the electron transit layer 16 than the surface 42C of the first barrier layer 42 .
  • the contact portion 32 has an inclined surface 32A that is inclined so that the width becomes narrower toward the electron transit layer 16, a tip surface 32B that is in contact with the recess bottom surface 18C as the bottom surface of the opening 50, and a tip surface 32B that is inclined with respect to the tip surface 32B.
  • a curved surface 32C provided between the surface 32A and the curved surface 32C.
  • the inclined surface 32A includes a first portion 32AA in contact with the dielectric layer 22 and a second portion 32AB in contact with the electron supply layer 18. Further, the inclined surface 32A includes a third portion 32AC that is in contact with the first barrier layer 42.
  • the first portion 32AA is in contact with the inner surface 22B of the dielectric layer 22 that constitutes the penetration portion 52.
  • the first portion 32AA is in contact with the entire inner surface 22B. Therefore, the angle of inclination of the first portion 32AA with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 22B with respect to the Z-axis direction.
  • the second portion 32AB is in contact with the recessed slope 18E that constitutes the recessed portion 54 of the electron supply layer 18.
  • the second portion 32AB is in contact with the entire recessed slope 18E. Therefore, the inclination angle of the second portion 32AB with respect to the Z-axis direction is equal to the inclination angle of the recessed slope surface 18E with respect to the Z-axis direction. Further, the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are equal to each other.
  • both the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are 10° or more and 20° or less.
  • both the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are 15°.
  • the first portion 32AA and the second portion 32AB are continuous so as to be flush with each other. In other words, the boundary between the first portion 32AA and the second portion 32AB and the boundary between the second portion 32AB and the first portion 32AA are not shifted from each other in the X-axis direction. In other words, no step is formed between the first portion 32AA and the second portion 32AB.
  • the third portion 32AC is in contact with the inner surface 42B of the first barrier layer 42 that constitutes the barrier-side penetration portion 56.
  • the third portion 32AC is in contact with the entire inner surface 42B. Therefore, the angle of inclination of the third portion 32AC with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 42B with respect to the Z-axis direction. Further, the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the third portion 32AC with respect to the Z-axis direction are equal to each other. Further, in the first embodiment, the first portion 32AA and the third portion 32AC are continuous so as to be flush with each other.
  • the boundary portion between the first portion 32AA and the third portion 32AC and the boundary portion between the third portion 32AC and the first portion 32AA are not shifted from each other in the X-axis direction. In other words, no step is formed between the first portion 32AA and the third portion 32AC.
  • the tip surface 32B of the contact portion 32 extends along the X-axis direction.
  • the tip surface 32B is in contact with the electron supply layer 18. More specifically, the tip surface 32B is in contact with the recess bottom surface 18C of the electron supply layer 18 (the bottom surface of the opening 50). Since the recess bottom surface 18C is located closer to the back surface 18B than the center of the electron supply layer 18 in the thickness direction, the tip surface 32B is located closer to the back surface 18B than the center of the electron supply layer 18 in the thickness direction. It is provided near layer 16.
  • the curved surface 32C of the contact portion 32 is curved so as to be convex toward the electron transit layer 16. That is, the center of curvature of the curved surface 32C is located closer to the dielectric layer 22 with respect to the tip surface 32B. In the first embodiment, the curved surface 32C is located between the front surface 18A and the back surface 18B of the electron supply layer 18 in the Z-axis direction. The curved surface 32C is in contact with the electron supply layer 18. More specifically, the curved surface 32C is in contact with the recessed curved surface 18D of the electron supply layer 18. The curvature of the curved surface 32C is equal to the curvature of the recessed curved surface 18D.
  • the length of the arc of the curved surface 32C is longer than the length of the arc of the connection portion 38 between the contact portion 32 and the wiring portion 34 in the electrode layer 40. More specifically, the connection portion 38 is formed in a curved concave shape that is concave toward the concave portion 36 (see FIG. 1) of the wiring portion 34.
  • the first barrier layer 42 has a barrier-side curved surface 42D formed between the inner surface 42B forming the barrier-side penetration portion 56 of the first barrier layer 42 and the surface 42C of the first barrier layer 42. include.
  • the barrier-side curved surface 42D is a portion that is unintentionally formed in the process of forming the barrier-side penetration portion 56 in the first barrier layer 42, for example, by dry etching.
  • the connecting portion 38 Since the connecting portion 38 is in contact with the barrier side curved surface 42D, the arc length of the connecting portion 38 is equal to the arc length of the barrier side curved surface 42D. Therefore, it can be said that the length of the arc of the curved surface 32C is longer than the length of the arc of the unintentionally formed barrier-side curved surface 42D.
  • FIGS. 3 to 8 are schematic cross-sectional views showing exemplary manufacturing steps of the nitride semiconductor device 10. Note that, for easy understanding, members that become the final components of the nitride semiconductor device 10 are indicated by the same reference numerals as in FIG. 1.
  • the method for manufacturing the nitride semiconductor device 10 includes forming a buffer layer 14, an electron transit layer 16, and an electron supply layer 18 on a substrate 12, which is, for example, a Si substrate with a ⁇ 111> plane orientation. including doing.
  • the buffer layer 14, the electron transit layer 16, and the electron supply layer 18 can be epitaxially grown using a metal organic chemical vapor deposition (MOCVD) method.
  • MOCVD metal organic chemical vapor deposition
  • the buffer layer 14 is a multilayer buffer layer, and after an AlN layer (first buffer layer) is formed on the substrate 12, a graded AlGaN layer (second buffer layer) is formed on the AlN layer. buffer layer) is formed.
  • the graded AlGaN layer is formed, for example, by stacking three AlGaN layers with Al compositions of 75%, 50%, and 25% in order from the side closest to the AlN layer.
  • the electron supply layer 18 has a larger band gap than the electron transit layer 16.
  • the thickness of the buffer layer 14 is, for example, 1.5 ⁇ m
  • the thickness of the electron transit layer 16 is, for example, 1 ⁇ m
  • the thickness of the electron supply layer 18 is, for example, 10 nm.
  • the method for manufacturing the nitride semiconductor device 10 includes forming a dielectric layer 22 on the electron supply layer 18.
  • dielectric layer 22 is a SiN layer formed by plasma-enhanced chemical vapor deposition (PECVD). Note that the dielectric layer 22 may be formed by a low-pressure chemical vapor deposition (LPCVD) method. Further, the thickness of the dielectric layer 22 is, for example, 100 nm.
  • the method for manufacturing the nitride semiconductor device 10 includes forming a first barrier layer 42 on the dielectric layer 22.
  • the first barrier layer 42 is a TiN layer formed by sputtering. Further, the thickness of the first barrier layer 42 is 50 nm. Note that the first barrier layer 42 may be made of WSiN or WN.
  • the method for manufacturing the nitride semiconductor device 10 includes forming a barrier-side penetration portion 56 in the first barrier layer 42. As shown in FIG. More specifically, first, a mask 60 including an opening 62 is formed. Specifically, a photoresist is formed on the first barrier layer 42. Subsequently, the photoresist is patterned so that a portion of the first barrier layer 42 is exposed from the photoresist. As a result, a mask 60 including an opening 62 is formed. The opening 62 is formed in a tapered shape such that the opening width of the opening 62 becomes narrower toward the first barrier layer 42 .
  • the first barrier layer 42 at the positions corresponding to the openings 62 is removed by etching (for example, dry etching) using this mask 60.
  • etching for example, dry etching
  • a barrier-side through-hole 56 is formed at a position corresponding to the opening 62.
  • the opening part 62 is formed in a tapered shape. It is formed as a sloped surface that becomes narrower.
  • the dielectric layer 22 is exposed due to the formation of the barrier-side penetration portion 56.
  • the method for manufacturing nitride semiconductor device 10 includes forming a through portion 52 in dielectric layer 22. As shown in FIG. More specifically, the dielectric layer 22 at the positions corresponding to the openings 62 is removed by etching (for example, dry etching) using the mask 60 . At this time, etching conditions are set so as not to damage the electron supply layer 18 due to etching. In one example, the bias power used to form the penetration portion 52 in the dielectric layer 22 is smaller than the bias power used to form the barrier-side penetration portion 56 in the first barrier layer 42 .
  • the opening 62 of the inner surface 22B of the dielectric layer 22 that constitutes the penetration part 52 is formed in a tapered shape, the opening width of the penetration part 52 becomes narrower toward the electron supply layer 18. Formed as an inclined surface. Furthermore, since a common mask 60 is used, the angle of inclination of the inner surface 42B of the first barrier layer 42 with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction. Further, the inner surface 42B and the inner surface 22B are continuous so as to be flush with each other. Here, the electron supply layer 18 is exposed due to the formation of the penetrating portion 52.
  • the method for manufacturing nitride semiconductor device 10 includes forming a recess portion 54 in electron supply layer 18. As shown in FIG. More specifically, a portion of the electron supply layer 18 at a position corresponding to the opening 62 is removed by etching (for example, dry etching) using the mask 60. At this time, etching conditions are set so that the recess portion 54, that is, the recess bottom surface 18C, the recess curved surface 18D, and the recess slope surface 18E are formed. Further, since the opening 62 is formed in a tapered shape, the recessed slope 18E is formed as a slope such that the width of the recessed portion 54 becomes narrower toward the electron transit layer 16.
  • etching for example, dry etching
  • the angle of inclination of the recessed slope 18E with respect to the Z-axis direction and the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction are equal to each other.
  • the recessed slope 18E and the inner surface 22B are continuous so as to be flush with each other.
  • each of the inclination angles of the recessed slope 18E and the inner surfaces 22B, 42B with respect to the Z-axis direction is 10° or more and 20° or less, and in the first embodiment, is 15°.
  • the method for manufacturing the nitride semiconductor device 10 includes forming an electrode layer 40 and a second barrier layer 44. Both the electrode layer 40 and the second barrier layer 44 are formed by sputtering.
  • the first metal layer is made of a material containing Ti, for example.
  • the thickness of the first metal layer is 20 nm.
  • a second metal layer is formed on the first metal layer.
  • the second metal layer is made of a material containing AlCu.
  • the second metal layer is, for example, an alloy containing approximately 1% or less of Cu to Al.
  • the thickness of the second metal layer is 200 nm.
  • a third metal layer is formed on the second metal layer.
  • the third metal layer is made of a material containing Ti.
  • the thickness of the third metal layer is approximately 20 nm.
  • a second barrier layer 44 is formed on the third metal layer.
  • the second barrier layer 44 is a TiN layer formed by sputtering. Further, the thickness of the second barrier layer 44 is 50 nm.
  • the contact portion 32 of the electrode 30 is formed.
  • the second barrier layer 44 may be made of WSiN or WN.
  • a mask 64 is formed on the second barrier layer 44. Specifically, a photoresist is formed on the second barrier layer 44. Subsequently, the photoresist is patterned so that a portion of the second barrier layer 44 is exposed from the photoresist. The mask 64 is patterned to include an inclined surface 66 whose width increases toward the second barrier layer 44 .
  • the method for manufacturing the nitride semiconductor device 10 includes patterning each of the first barrier layer 42, the electrode layer 40, and the second barrier layer 44. More specifically, the second barrier layer 44 exposed from the mask 64 is removed by etching (for example, dry etching) using the mask 64. Thereby, the electrode layer 40 is exposed from the mask 64. Subsequently, the electrode layer 40 exposed from the mask 64 is removed by dry etching. This exposes the first barrier layer 42 from the mask 64. Subsequently, the first barrier layer 42 exposed from the mask 64 is removed by dry etching.
  • etching for example, dry etching
  • each of the outer surface 44A of the second barrier layer 44, the outer surface 40A of the electrode layer 40, and the outer surface 42A of the first barrier layer 42 is formed as an inclined surface. ing. Thereby, the wiring portion 34 of the electrode 30 is formed.
  • the method for manufacturing the nitride semiconductor device 10 includes performing heat treatment. More specifically, the heat treatment is performed at a temperature that allows good ohmic characteristics to be obtained between the contact portion 32 of the electrode 30 and the 2DEG 20 (see FIG. 1) via the electron supply layer 18. That is, by performing the heat treatment, ohmic contact is formed between the contact portion 32 and the 2DEG 20 via the electron supply layer 18. More specifically, nitrogen (N) in the electron supply layer 18 formed of AlGaN combines with Ti of the contact portion 32, so that the crystal of the electron supply layer 18 is in a state where N is removed, that is, there are no vacancies. It will be in a formed state. In this state, the electron supply layer 18 becomes n-type.
  • the electrode 30 is formed.
  • a first barrier layer 42 and a second barrier layer 44 are formed, and the first barrier layer 42 and the second barrier layer 44 are formed of high melting point metals such as TiN, WSiN, and WN. Therefore, interaction between the electrode layer 40, the dielectric layer 22, and the insulating layer 24 is less likely to occur. Therefore, diffusion of Al in the electrode layer 40 into the dielectric layer 22 and the insulating layer 24 is suppressed.
  • the temperature of the heat treatment is appropriately set depending on the material of the electrode 30. Through the above steps, the electrode 30 is formed.
  • the method for manufacturing the nitride semiconductor device 10 includes forming an insulating layer 24.
  • insulating layer 24 is a layer of SiO 2 formed by PECVD. Note that the insulating layer 24 may be formed by the LPCVD method. Through the above steps, nitride semiconductor device 10 is manufactured.
  • FIG. 9 shows a schematic cross-sectional structure of a nitride semiconductor device of a comparative example (hereinafter referred to as "comparative nitride semiconductor device 10X").
  • the comparative nitride semiconductor device 10X differs from the nitride semiconductor device 10 of the first embodiment (see FIG. 1) in the configuration of the opening and the contact portion of the electrode.
  • the opening of the comparative nitride semiconductor device 10X will be referred to as an "opening 50X”
  • the contact portion will be referred to as a "contact portion 32X”.
  • the same components as those in the nitride semiconductor device 10 of the first embodiment will be described using the same reference numerals.
  • the opening 50X exposes the electron supply layer 18 by penetrating the dielectric layer 22.
  • the inner surface 22B of the dielectric layer 22 extends along the Z-axis direction.
  • the recess portion 54 is not formed in the electron supply layer 18.
  • the surface 18A of the electron supply layer 18 constitutes the bottom surface of the opening 50X.
  • the contact portion 32X is provided within the opening 50X.
  • the outer surface 32XA of the contact portion 32X is in contact with the inner surface 22B of the dielectric layer 22. That is, the outer surface 32XA extends along the Z-axis direction.
  • the tip surface 32XB of the contact portion 32X is in contact with the surface 18A of the electron supply layer 18. In this way, a corner portion 32XC is formed by the tip surface 32XB and the outer surface 32XA of the contact portion 32X.
  • heat treatment is performed to form an ohmic contact between the contact portion 32X and the 2DEG 20 via the electron supply layer 18.
  • stress is generated in the contact portion 32X due to the difference in thermal expansion between the contact portion 32X, the dielectric layer 22, and the electron supply layer 18.
  • the stress at the corner portion 32XC becomes large.
  • the contact portion 32X may be deformed, and a void VX may be generated between the tip surface 32XB of the contact portion 32X and the surface 18A of the electron supply layer 18. This increases the contact resistance between the contact portion 32X and the 2DEG 20 via the electron supply layer 18.
  • the contact portion 32 is provided between the inclined surface 32A whose width becomes narrower toward the tip surface 32B, and between the inclined surface 32A and the tip surface 32B. 32C of curved surfaces provided. Therefore, when heat treatment is performed, the force that causes the contact portion 32 to expand is dispersed by both the inclined surface 32A and the curved surface 32C. Therefore, the stress generated in the contact portion 32 is reduced. This suppresses deformation of the contact portion 32, thereby suppressing the generation of voids VX between the tip surface 32B of the contact portion 32 and the electron supply layer 18. Therefore, an increase in contact resistance between the contact portion 32 and the 2DEG 20 via the electron supply layer 18 can be suppressed.
  • FIG. 10 is a graph showing the relationship between the position of the tip surface 32B of the contact portion 32 in the Z-axis direction and the contact resistance.
  • the horizontal axis indicates the position of the tip surface 32B of the contact portion 32 in the Z-axis direction
  • the vertical axis indicates the magnitude of contact resistance ( ⁇ mm).
  • the range of "0 nm” to "10 nm” on the horizontal axis is the range in the Z-axis direction in which the electron supply layer 18 is formed
  • "0 nm” is the position of the back surface 18B of the electron supply layer 18
  • "10 nm” is the range of the electron supply layer 18. This is the position of the surface 18A of the supply layer 18.
  • the negative range on the horizontal axis is the range in the Z-axis direction in which the electron transit layer 16 is formed. In other words, the negative range on the horizontal axis indicates that the contact portion 32 penetrates the electron supply layer 18 and is in contact with the electron transit layer 16 .
  • fluorine is used as a reactive gas when forming the penetration portion 52 in the dielectric layer 22 by dry etching. Since this fluorine remains on the surface 18A of the electron supply layer 18, it is thought that the contact resistance increases.
  • the opening 50 has a recess 54 formed in the electron supply layer 18 .
  • the tip end surface 32B of the contact portion 32 is in contact with the recess bottom surface 18C of the recess portion 54. Thereby, contact resistance can be reduced.
  • the contact resistance is particularly reduced in the range where the position of the tip surface 32B of the contact portion 32 is 0 nm or more and less than 3 nm.
  • the contact resistance is reduced as the tip surface 32B of the contact portion 32 approaches the position of 1.5 nm.
  • the contact resistance increases as the tip surface 32B of the contact portion 32 approaches the electron transit layer 16 from a position of 1.5 nm.
  • the contact resistance at a position where the tip surface 32B of the contact portion 32 is 0 nm is approximately equal to the contact resistance at a position where the tip surface 32B is 5 nm. In this way, the contact resistance reaches its minimum value at a position where the tip surface 32B of the contact portion 32 is 1.5 nm.
  • the nitride semiconductor device 10 includes an electron transit layer 16, an electron supply layer 18 formed on the electron transit layer 16, and an electron supply layer 18 whose band gap is larger than that of the electron transit layer 16, and an electron supply layer 18 formed on the electron transit layer 18.
  • the electrode 30 has a contact portion 32 that is in electrical contact with the electron supply layer 18 through an opening 50 that penetrates at least the dielectric layer 22 .
  • the contact portion 32 includes an inclined surface 32A whose width becomes narrower toward the electron transit layer 16, a tip surface 32B that is in contact with the bottom surface of the opening 50, and a portion between the tip surface 32B and the inclined surface 32A. It has a curved surface 32C that is curved to be convex toward the electron transit layer 16.
  • the opening 50 has a penetration part 52 that penetrates the dielectric layer 22 and a recess part 54 that is continuous with the penetration part 52 and provided in the electron supply layer 18.
  • the opening 50 is formed in at least a portion of the electron supply layer 18 through the dielectric layer 22 .
  • the inclined surface 32A of the contact portion 32 includes a first portion 32AA in contact with the dielectric layer 22 and a second portion 32AB in contact with the electron supply layer 18.
  • the curved surface 32C of the contact portion 32 is in contact with the electron supply layer 18.
  • the tip surface 32B of the contact portion 32 is provided closer to the electron transit layer 16 than the center of the electron supply layer 18 in the thickness direction (Z direction) of the electron supply layer 18. According to this configuration, as shown in the graph of FIG. 10, when the tip surface 32B of the contact portion 32 is provided closer to the electron transit layer 16 than the center of the electron supply layer 18 in the Z-axis direction, the contact portion 32 and the electron Contact resistance with the 2DEG 20 via the supply layer 18 can be further reduced.
  • the inclination angle of the first portion 32AA of the inclined surface 32A of the contact portion 32 with respect to the thickness direction (Z-axis direction) of the electron transit layer 16, and the inclination angle of the second portion 32AB with respect to the Z-axis direction are as follows: equal to each other.
  • the force of thermal expansion of the contact portion 32 is applied to the inner surface 22B of the dielectric layer 22 and the electron supply layer 18 during heat treatment in the manufacturing process of the nitride semiconductor device 10.
  • the forces dispersed on the recessed slope 18E are less likely to affect each other.
  • stress generated in the contact portion 32 due to reaction force from the dielectric layer 22 and the electron supply layer 18 to the contact portion 32 is reduced. Therefore, since it is possible to suppress the generation of voids VX between the contact part 32 and the electron supply layer 18, an increase in the contact resistance between the electrode 30 (contact part 32) and the 2DEG 20 via the electron supply layer 18 can be suppressed. It can be suppressed.
  • Both the inclination angle of the first portion 32AA of the inclined surface 32A with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are 10° or more and 20° or less.
  • both the inclination angle of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction and the inclination angle of the recessed slope surface 18E of the recess portion 54 with respect to the Z-axis direction are 10° or more and 20° or less.
  • the first portion 32AA and the second portion 32AB of the inclined surface 32A of the contact portion 32 are continuous so as to be flush with each other. According to this configuration, compared to a configuration in which a step is formed between the first portion 32AA and the second portion 32AB, stress generated in the contact portion 32 due to the step can be eliminated, so that the contact portion 32 can be reduced.
  • the electrode 30 has a wiring section 34 provided on the dielectric layer 22.
  • the length L2 of the wiring portion 34 in the width direction (X-axis direction) is at least twice the length L1 of the tip portion 32P of the contact portion 32 in the width direction.
  • the heat capacity of the electrode 30 including the wiring portion 34 and the contact portion 32 can be increased. Thereby, stress generated in the electrode 30 during heat treatment in the manufacturing process of the nitride semiconductor device 10 can be reduced.
  • the wiring section 34 includes a first barrier layer 42 in contact with the dielectric layer 22. According to this configuration, since the wiring part 34 and the dielectric layer 22 are separated by the first barrier layer 42, the Al component contained in the electrode 30 and the Si component contained in the dielectric layer 22 react with each other. Due to this, diffusion of Al into the dielectric layer 22 can be suppressed.
  • the first barrier layer 42 includes any one of TiN, WSiN, and WN. According to this configuration, diffusion of Al contained in the electrode 30 into the dielectric layer 22 can be suppressed. Note that the same effect can be obtained even if the first barrier layer 42 has a structure in which a plurality of layers containing any one of TiN, WSiN, and WN are laminated.
  • the wiring section 34 includes a second barrier layer 44 provided on the opposite side to the first barrier layer 42. According to this configuration, since the wiring portion 34 and the insulating layer 24 are separated by the second barrier layer 44, the Al component contained in the electrode 30 and the Si component contained in the insulating layer 24 do not interact with each other. Due to this, diffusion of Al into the insulating layer 24 can be suppressed.
  • the second barrier layer 44 includes any one of TiN, WSiN, and WN. According to this configuration, diffusion of Al contained in the electrode 30 into the insulating layer 24 can be suppressed. Note that the same effect can be obtained even if the second barrier layer 44 has a structure in which a plurality of layers containing any one of TiN, WSiN, and WN are laminated.
  • the electrode layer 40 contains at least Ti, Al, and Cu. According to this configuration, when the electrode layer 40 contains Ti, Ti forms vacancies in the electron supply layer 18 by extracting nitrogen (N) from the electron supply layer 18 formed of AlGaN. Since the holes exhibit n-type, the contact resistance of the electrode 30 to the 2DEG 20 can be reduced.
  • the electrode layer 40 contains Al
  • Al has a low Schottky barrier to the electron supply layer 18 formed of AlGaN.
  • Al diffuses into the recessed portion 54 of the electron supply layer 18, thereby reducing contact resistance.
  • electromigration becomes less likely to occur when a large current flows through the electrode 30.
  • the electron supply layer 18 is an Al x Ga 1-x N layer (0.2 ⁇ x ⁇ 0.3). According to this configuration, when the Al composition ratio is 0.2 or more and 0.3 or less, the recess portion 54 including the recess inclined surface 18E, the recess curved surface 18D, and the recess bottom surface 18C is formed in the electron supply layer 18. be able to. Therefore, an increase in contact resistance between the electrode 30 (contact portion 32) and the 2DEG 20 via the electron supply layer 18 can be suppressed.
  • the length of the arc of the curved surface 32C of the contact portion 32 is longer than the length of the arc of the connection portion 38 (see FIG. 2) between the contact portion 32 and the wiring portion 34. According to this configuration, the effect of reducing the stress generated in the electrode 30 by the curved surface 32C can be enhanced.
  • the configuration of the nitride semiconductor device 10 of the second embodiment will be described with reference to FIG. 11.
  • the nitride semiconductor device 10 of the second embodiment differs from the nitride semiconductor device 10 of the first embodiment mainly in the configurations of the opening 50 and the contact portion 32 of the electrode 30.
  • points different from the nitride semiconductor device 10 of the first embodiment will be explained in detail, and components common to the nitride semiconductor device 10 of the first embodiment will be given the same reference numerals and their explanation will be omitted. .
  • the opening 50 is provided to expose the surface 18A of the electron supply layer 18. That is, in the second embodiment, the inner surface 22B of the dielectric layer 22 that constitutes the penetrating portion 52 and the recessed slope 18E of the electron supply layer 18 provided with the recessed portion 54 are not flush and continuous.
  • the edge of the inner surface 22B of the dielectric layer 22 that is in contact with the surface 18A of the electron supply layer 18 is located further in the X-axis direction than the edge of the recessed slope 18E of the electron supply layer 18 that is in contact with the surface 18A of the electron supply layer 18. It is located outside of.
  • the surface 18A of the electron supply layer 18 is provided between the inner surface 22B of the dielectric layer 22 and the recessed slope 18E. That is, the surface 18A of the electron supply layer 18 provided between the inner surface 22B of the dielectric layer 22 and the recessed slope 18E connects the inner surface 22B of the dielectric layer 22 and the recessed slope 18E.
  • the width of the penetrating portion 52 is wider than the width of the penetrating portion 52 in the first embodiment. Note that the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction and the angle of inclination of the recessed inclined surface 18E with respect to the Z-axis direction in the second embodiment are the same as those in the first embodiment.
  • the contact portion 32 of the electrode 30 includes a step portion 39 provided between the first portion 32AA and the second portion 32AB of the inclined surface 32A.
  • the step portion 39 is in contact with a surface 18A of the electron supply layer 18 that is in contact with the dielectric layer 22. More specifically, the step portion 39 includes a step surface 39A facing the surface 18A of the electron supply layer 18.
  • the stepped surface 39A is formed in a flat shape parallel to the XY plane.
  • the step surface 39A is in contact with the surface 18A of the electron supply layer 18.
  • the tip surface 32B and curved surface 32C of the contact portion 32 are similar to the tip surface 32B and curved surface 32C of the first embodiment.
  • the method of manufacturing the nitride semiconductor device 10 of the second embodiment differs in the method of forming the recess portion 54 in the electron supply layer 18. More specifically, first, a mask (not shown) is formed on the electron supply layer 18 exposed by the through portion 52 of the dielectric layer 22 . This mask, like the mask 60 (see FIG. 5) and the like, is formed by photoresist and patterning. The mask has an opening that is narrower than the through-hole 52 . The electron supply layer 18 is exposed through the opening.
  • a portion of the electron supply layer 18 at a position corresponding to the opening of the mask is removed by etching using a mask (for example, dry etching).
  • a mask for example, dry etching
  • etching conditions are set so that the recess portion 54, that is, the recess bottom surface 18C, the recess curved surface 18D, and the recess slope surface 18E are formed.
  • the opening of the mask (not shown) is formed in a tapered shape, the recessed slope 18E is formed as a slope such that the width of the recessed portion 54 becomes narrower toward the electron transit layer 16.
  • the mask for etching the dielectric layer 22 and the mask for etching the electron supply layer 18 it is possible to adjust the inclination angle of the recessed slope 18E with respect to the Z-axis direction and the dielectric material with respect to the Z-axis direction. It is possible that the inclination angles of the inner surfaces 22B of the layers 22 are equal to each other.
  • the angle of inclination of the recessed slope 18E and the inner surfaces 22B, 42B with respect to the Z-axis direction is 10° or more and 20° or less, and in one example is 15°.
  • the contact portion 32 includes a step portion 39 provided between the first portion 32AA and the second portion 32AB of the inclined surface 32A.
  • the step portion 39 is in contact with a surface 18A of the electron supply layer 18 that is in contact with the dielectric layer 22.
  • the contact area between the contact portion 32 and the electron supply layer 18 can be increased. Therefore, a large current can be supplied from the contact portion 32 to the electron supply layer 18 with low resistance.
  • Such an ohmic contact structure can reduce power consumption when the nitride semiconductor device 10 is applied to a power device, for example.
  • nitride semiconductor device 10 of the third embodiment differs from the nitride semiconductor device 10 of the first embodiment mainly in the configurations of the opening 50 and the contact portion 32 of the electrode 30.
  • points different from the nitride semiconductor device 10 of the first embodiment will be explained in detail, and components common to the nitride semiconductor device 10 of the first embodiment will be given the same reference numerals and their explanation will be omitted. .
  • the opening 50 does not have the recess 54 (see FIG. 1). That is, the opening 50 has the barrier-side penetration part 56 and the penetration part 52.
  • the bottom surface of the opening 50 is formed by the surface 18A of the electron supply layer 18.
  • the shape of the penetrating portion 52 is different. More specifically, the inner surface 22B of the dielectric layer 22 constituting the penetrating portion 52 is a dielectric side inclined surface 22BA and a dielectric side provided between the dielectric side inclined surface 22BA and the surface 18A of the electron supply layer 18. A curved surface 22BB.
  • the dielectric side inclined surface 22BA is continuous so as to be flush with the inner surface 42B of the first barrier layer 42 that constitutes the barrier side penetration portion 56.
  • the inclination angle of the dielectric side inclined surface 22BA with respect to the Z-axis direction is equal to the inclination angle of the inner surface 42B with respect to the Z-axis direction. Similar to the first embodiment, these inclination angles are 10° or more and 20° or less, and are 15° in one example.
  • the dielectric side curved surface 22BB is curved to be convex toward the electron supply layer 18.
  • the shape of the dielectric side curved surface 22BB is similar to the shape of the recessed curved surface 18D of the first embodiment.
  • the arc length of the dielectric side curved surface 22BB is longer than the arc length of the connection portion 38 (see FIG. 2) between the contact portion 32 and the wiring portion 34.
  • the tip surface 32B of the contact portion 32 of the electrode 30 is flush with the upper surface of the electron supply layer 18 that is in contact with the dielectric layer 22 (the surface 18A of the electron supply layer 18).
  • the tip surface 32B is in contact with the surface 18A of the electron supply layer 18.
  • the inclined surface 32A of the contact portion 32 does not have the second portion 32AB. That is, the inclined surface 32A has a first portion 32AA and a third portion 32AC.
  • the curved surface 32C is located closer to the first barrier layer 42 than the surface 18A of the electron supply layer 18.
  • the curved surface 32C is in contact with the dielectric layer 22. More specifically, the curved surface 32C is in contact with the dielectric side curved surface 22BB. Therefore, the length of the arc of the curved surface 32C is longer than the length of the arc of the connecting portion 38 (see FIG. 2).
  • the tip portion 32P of the contact portion 32 is composed of a tip surface 32B and a curved surface 32C.
  • the relationship between the length of the wiring portion 34 in the width direction (X-axis direction) and the length of the tip portion 32P of the contact portion 32 in the width direction is the same as in the first embodiment.
  • nitride semiconductor device 10 of the fourth embodiment differs from the nitride semiconductor device 10 of the first embodiment mainly in the configuration of the contact portion 32 of the electrode 30.
  • points different from the nitride semiconductor device 10 of the first embodiment will be explained in detail, and components common to the nitride semiconductor device 10 of the first embodiment will be given the same reference numerals and their explanation will be omitted. .
  • the opening 50 penetrates both the dielectric layer 22 and the electron supply layer 18.
  • the opening 50 is also formed in at least a portion of the electron transit layer 16.
  • the penetrating portion 52 of the opening 50 penetrates both the dielectric layer 22 and the electron supply layer 18 .
  • a recessed portion 54 continuous with the penetration portion 52 is provided in the electron transit layer 16.
  • the penetrating portion 52 includes a first penetrating portion 52A penetrating the dielectric layer 22 and a second penetrating portion 52B penetrating the electron supply layer 18.
  • the first penetrating portion 52A has the same configuration as the penetrating portion 52 (see FIG. 1) of the first embodiment.
  • the relationship between the inner surface 22B of the dielectric layer 22 that constitutes the first penetrating portion 52A and the inner surface 42B of the first barrier layer 42 that constitutes the barrier-side penetrating portion 56 is the same as in the first embodiment.
  • the second penetrating portion 52B is constituted by an inner surface 18F that constitutes an opening formed in the electron supply layer 18.
  • the inner surface 18F is sloped so that the opening width of the second penetration portion 52B becomes narrower toward the buffer layer 14 (see FIG. 1).
  • the opening width of the second penetrating portion 52B can be defined by the size of the second penetrating portion 52B in the X-axis direction.
  • the angle of inclination of the inner surface 18F with respect to the Z-axis direction is equal to the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction.
  • the inner surface 18F and the inner surface 22B are continuous so as to be flush with each other.
  • Both the angle of inclination of the inner surface 18F with respect to the Z-axis direction and the angle of inclination of the inner surface 22B of the dielectric layer 22 with respect to the Z-axis direction are 10° or more and 20° or less, as in the first embodiment. It is 15°.
  • the recess portion 54 includes a recess bottom surface 16C formed in the electron transit layer 16, and recess curved surfaces 16D formed at both ends of the recess bottom surface 16C in the X-axis direction. That is, unlike the first embodiment, the recessed portion 54 does not include a recessed slope.
  • the recess bottom surface 16C can also be said to be the bottom surface of the electron transit layer 16 that is in contact with the tip surface 32B of the contact section 32.
  • the recess bottom surface 16C is arranged closer to the front surface 16A with respect to the back surface 16B of the electron transit layer 16.
  • the recess bottom surface 16C is arranged closer to the surface 16A than the center of the electron transit layer 16 in the thickness direction (Z-axis direction).
  • the distance between the surface 16A of the electron transit layer 16 and the recess bottom surface 16C in the Z-axis direction, that is, the depth of the recess portion 54 is 20 nm or less.
  • the recess bottom surface 16C extends along the X-axis direction.
  • the recess bottom surface 16C constitutes the bottom surface of the opening 50.
  • the recessed curved surface 16D is curved to be convex toward the buffer layer 14. That is, the center of curvature of the recess curved surface 16D is located on the electron supply layer 18 side with respect to the recess bottom surface 16C.
  • the shape of the recessed curved surface 16D is similar to the shape of the recessed curved surface 18D (see FIG. 1) of the first embodiment.
  • the length of the arc of the recessed curved surface 16D is longer than the length of the arc of the connection portion 38 (see FIG. 2) between the contact portion 32 and the wiring portion 34.
  • the contact portion 32 of the electrode 30 penetrates the dielectric layer 22 and the electron supply layer 18 via the opening 50.
  • the contact portion 32 has reached the electron transit layer 16.
  • the inclined surface 32A of the contact portion 32 includes a first portion 32AA in contact with the dielectric layer 22 and a second portion 32AB in contact with the electron supply layer 18. Further, the inclined surface 32A includes a third portion 32AC that is in contact with the first barrier layer 42.
  • the configuration of the first portion 32AA of the fourth embodiment is the same as the configuration of the first portion 32AA of the first embodiment.
  • the second portion 32AB of the fourth embodiment is in contact with the entire inner surface 18F of the electron supply layer 18, unlike the second portion 32AB of the first embodiment.
  • the first portion 32AA and the second portion 32AB are continuous so as to be flush with each other.
  • the angle of inclination of the first portion 32AA with respect to the Z-axis direction and the angle of inclination of the second portion 32AB with respect to the Z-axis direction are equal to each other.
  • Both the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are 10° or more and 20° or less.
  • both the inclination angle of the first portion 32AA with respect to the Z-axis direction and the inclination angle of the second portion 32AB with respect to the Z-axis direction are 15°.
  • the curved surface 32C of the contact portion 32 is in contact with at least the electron transit layer 16. That is, in the fourth embodiment, the curved surface 32C is located closer to the buffer layer 14 than the back surface 18B of the electron supply layer 18. The length of the arc of the curved surface 32C is longer than the length of the arc of the connection portion 38 between the contact portion 32 and the wiring portion 34, as in the first embodiment.
  • the tip portion 32P of the contact portion 32 is composed of a tip surface 32B and a curved surface 32C.
  • the tip portion 32P becomes a portion that fills the recess portion 54 provided in the electron transit layer 16.
  • the relationship between the length of the wiring portion 34 in the width direction (X-axis direction) and the length of the tip portion 32P of the contact portion 32 in the width direction is the same as in the first embodiment.
  • the entire curved surface 32C is in contact with the electron transit layer 16, but the present invention is not limited thereto.
  • a portion of the curved surface 32C may be in contact with the electron supply layer 18.
  • a recessed curved surface is formed in a part of the electron supply layer 18.
  • the recessed curved surface is formed in both the electron supply layer 18 and the electron transit layer 16.
  • the opening 50 includes a penetration section 52 that penetrates both the dielectric layer 22 and the electron supply layer 18, and a recess section 54 that is continuous with the penetration section 52 and provided in the electron transit layer 16.
  • the opening 50 penetrates both the dielectric layer 22 and the electron supply layer 18 and is also formed in at least a portion of the electron transit layer 16 .
  • the contact portion 32 penetrates the dielectric layer 22 and the electron supply layer 18 via the opening 50 and reaches the electron transit layer 16 .
  • the inclined surface 32A of the contact portion 32 includes a first portion 32AA in contact with the dielectric layer 22 and a second portion 32AB in contact with the electron supply layer 18.
  • the curved surface 32C of the contact portion 32 is in contact with at least the electron transit layer 16.
  • the electron transit layer 16 includes a surface 16A in contact with the electron supply layer 18 and a recess bottom surface 16C as a bottom surface in contact with the tip surface 32B of the contact portion 32.
  • the distance between the surface 16A of the electron transit layer 16 and the recess bottom surface 16C in the thickness direction (Z-axis direction) of the electron transit layer 16 is 20 nm or less.
  • the recess portion 54 can be easily formed. can. Therefore, the manufacturing process of the nitride semiconductor device 10 can be stabilized.
  • the configuration of the nitride semiconductor device 10 of the fifth embodiment will be described with reference to FIGS. 14 and 15.
  • the nitride semiconductor device 10 of the fifth embodiment differs from the nitride semiconductor device 10 of the first embodiment in that it is configured as a high electron mobility transistor (HEMT).
  • HEMT high electron mobility transistor
  • the nitride semiconductor device 10 includes a gate layer 70 formed on the electron supply layer 18 and a gate electrode 72 formed on the gate layer 70. Further, the nitride semiconductor device 10 further includes a source electrode 74 and a drain electrode 76.
  • the gate layer 70 has a smaller band gap than the electron supply layer 18 and is made of a nitride semiconductor containing acceptor type impurities.
  • Gate layer 70 may be comprised of any material having a smaller bandgap than electron supply layer 18, for example an AlGaN layer.
  • the gate layer 70 is a GaN layer doped with acceptor type impurities (p-type GaN layer).
  • the acceptor type impurity can include at least one of zinc (Zn), magnesium (Mg), and C.
  • the maximum concentration of acceptor type impurities in the gate layer 70 is, for example, 1 ⁇ 10 18 cm ⁇ 3 or more and 1 ⁇ 10 20 cm ⁇ 3 or less.
  • the energy level of the electron transport layer 16 and the electron supply layer 18 is raised. Therefore, in the region immediately below the gate layer 70, the energy level of the conduction band of the electron transit layer 16 near the heterojunction interface between the electron transit layer 16 and the electron supply layer 18 is approximately the same as the Fermi level, or Or even bigger. Therefore, at zero bias when no voltage is applied to the gate electrode 72, the 2DEG 20 is not formed in the electron transit layer 16 in the region directly under the gate layer 70. On the other hand, a 2DEG 20 is formed in the electron transit layer 16 in a region other than the region directly under the gate layer 70.
  • the presence of the gate layer 70 doped with acceptor type impurities causes the 2DEG 20 to be depleted in the region immediately below the gate layer 70.
  • normally-off operation of the nitride semiconductor device 10 is realized.
  • an appropriate on-voltage is applied to the gate electrode 72, a channel is formed by the 2DEG 20 in the electron transit layer 16 in the region immediately below the gate electrode 72, so that conduction occurs between the source and the drain.
  • the gate electrode 72 is composed of one or more metal layers.
  • the gate electrode 72 is, for example, a TiN layer.
  • the gate electrode 72 may include a first metal layer made of a material containing Ti, and a second metal layer laminated on the first metal layer and made of a material containing TiN. .
  • the thickness of the gate electrode 72 may be, for example, 50 nm or more and 200 nm or less.
  • the gate electrode 72 can form a Schottky junction with the gate layer 70.
  • the dielectric layer 22 covers the electron supply layer 18, the gate layer 70, and the gate electrode 72.
  • the opening 50 includes a source opening 50A and a drain opening 50B. Each of source opening 50A and drain opening 50B is spaced apart from gate layer 70.
  • the gate layer 70 is located between the source opening 50A and the drain opening 50B in the X-axis direction. More specifically, the gate layer 70 is located between the source opening 50A and the drain opening 50B, and closer to the source opening 50A than the drain opening 50B.
  • the configurations of the source opening 50A and the drain opening 50B are similar to the configuration of the opening 50 in the first embodiment.
  • a plurality of electrodes 30 are provided and constitute a source electrode 74 and a drain electrode 76, respectively.
  • the source electrode 74 is electrically connected to the electron supply layer 18 via the source opening 50A.
  • the source electrode 74 includes a contact portion 74A and a field plate portion 74B continuous with the contact portion 74A.
  • the contact portion 74A is a portion buried in the source opening 50A. In other words, the contact portion 74A corresponds to the contact portion 32 of the electrode 30. Therefore, the configuration of the contact portion 74A is the same as the configuration of the contact portion 32.
  • the field plate portion 74B covers the dielectric layer 22 and includes an end portion 74C located between the drain opening 50B and the gate layer 70 in the X-axis direction in plan view. Field plate portion 74B is spaced apart from drain electrode 76 formed in drain opening 50B. The field plate portion 74B extends along the surface 22A of the dielectric layer 22 from the contact portion 74A to the end portion 74C toward the drain electrode 76. The field plate portion 74B plays a role of alleviating electric field concentration near the end of the gate electrode 72 at zero bias when no gate voltage is applied to the gate electrode 72. Although the shape is different, the field plate portion 74B corresponds to the wiring portion 34 of the electrode 30. Therefore, the field plate portion 74B has a laminated structure of the electrode layer 40, the first barrier layer 42, and the second barrier layer 44.
  • the drain electrode 76 is electrically connected to the electron supply layer 18 via the drain opening 50B.
  • the drain electrode 76 includes a contact portion 76A and a wiring portion 76B continuous with the contact portion 76A.
  • the contact portion 76A is a portion buried in the drain opening 50B.
  • the contact portion 76A corresponds to the contact portion 32 of the electrode 30. Therefore, the configuration of the contact portion 76A is the same as the configuration of the contact portion 32.
  • the wiring portion 76B corresponds to the wiring portion 34 of the electrode 30. Therefore, the wiring portion 76B has a laminated structure of the electrode layer 40, the first barrier layer 42, and the second barrier layer 44.
  • the electrode layers 40 of both the source electrode 74 and the drain electrode 76 are composed of one or more metal layers (eg, Ti, Al, TiN, etc.). Source electrode 74 and drain electrode 76 are in contact with electron supply layer 18 via source opening 50A and drain opening 50B, respectively. Thereby, both the source electrode 74 and the drain electrode 76 are in ohmic contact with the 2DEG 20.
  • the insulating layer 24 is formed to cover both the source electrode 74 and the drain electrode 76.
  • FIG. 15 shows a planar structure of an exemplary formation pattern 100 of the nitride semiconductor device 10 of the fifth embodiment.
  • drain electrode 76, source electrode 74, and dielectric layer 22 are depicted as being transparent so that underlying components (eg, gate layer 70) are visible.
  • underlying components eg, gate layer 70
  • dielectric layer 22 only source opening 50A and drain opening 50B are depicted.
  • the formed pattern 100 includes an active region 102 that contributes to transistor operation and an inactive region 104 that does not contribute to transistor operation.
  • the active region 102 refers to a region where current flows between the source and drain when a voltage is applied to the gate electrode 72.
  • nitride semiconductor devices are continuously formed along the X-axis direction.
  • Each of the nitride semiconductor devices shown in FIG. 15 corresponds to the nitride semiconductor device 10 in FIG. 14. That is, the cross-sectional view shown in FIG. 14 is an enlarged view of a portion of the cross-section of the formed pattern 100 in the active region 102 where one nitride semiconductor device (including the gate electrode and related source and drain electrodes) is present. It corresponds to what was done.
  • field plate portion 74B of source electrode 74 includes an end portion 74C located between drain opening 50B and gate layer 70.
  • a drain electrode 76 is formed in the active region 102.
  • the drain electrode 76 is not formed in the non-active region 104.
  • the source electrode 74, the gate layer 70, and the gate electrode 72 are formed continuously in the Y-axis direction across the active region 102 and the inactive region 104.
  • the operation of the nitride semiconductor device 10 of the fifth embodiment will be explained.
  • the dielectric breakdown electric field of Group III nitride semiconductors is about 10 times larger than that of Si. Therefore, it is a material suitable for small-sized, low-resistance nitride semiconductor devices.
  • the highly doped 2DEG 20 is formed, so the channel resistance and access resistance are reduced.
  • the channel resistance is the resistance directly below the gate layer 70
  • the access resistance is the resistance between the gate and source and the resistance between the gate and drain.
  • the contact structure between the source electrode 74 and the electron supply layer 18 and the contact structure between the drain electrode 76 and the electron supply layer 18 are replaced with the contact structure between the contact portion 32 of the electrode 30 and the electron supply layer 18 in the first embodiment. It has the same structure as the contact structure. Thereby, increase in contact resistance due to void VX (see FIG. 5) can be suppressed. Therefore, a HEMT with stable low resistance can be realized.
  • the contact resistance between the source electrode 74 and the drain electrode 76 and the 2DEG 20 via the electron supply layer 18 can be further reduced by the recessed portions 54 of both the source opening 50A and the drain opening 50B provided in the electron supply layer 18. . Therefore, a HEMT with even lower resistance can be realized.
  • the opening 50 includes a source opening 50A and a drain opening 50B.
  • the nitride semiconductor device 10 includes a gate electrode 72 provided on the electron supply layer 18 and covered with the dielectric layer 22, and a source electrode 74 electrically connected to the electron supply layer 18 through the source opening 50A. and a drain electrode 76 electrically connected to the electron supply layer 18 via the drain opening 50B.
  • At least one electrode 30 is provided and constitutes at least one of the source electrode 74 and the drain electrode 76.
  • the electrode 30 constitutes the source electrode 74, the contact resistance between the source electrode 74 and the 2DEG 20 via the electron supply layer 18 can be reduced. Further, since the electrode 30 constitutes the drain electrode 76, the contact resistance between the drain electrode 76 and the 2DEG 20 via the electron supply layer 18 can be reduced. Therefore, a HEMT with low resistance can be realized.
  • Source opening 50A, the drain opening 50B, and the gate electrode 72 are arranged apart from each other.
  • the source opening 50A is located on the opposite side of the gate electrode 72 from the drain opening 50B.
  • Source electrode 74 includes a field plate portion 74B extending from source opening 50A to a position closer to drain opening 50B than gate electrode 72.
  • electric field concentration near the end of the gate electrode 72 can be alleviated during zero bias when no gate voltage is applied to the gate electrode 72 by the field plate portion 74B. Further, when a high voltage is applied to the drain electrode 76, electric field concentration at the end closer to the drain electrode 76 among both ends of the gate layer 70 in the X-axis direction can be alleviated.
  • the nitride semiconductor device 10 includes a gate layer 70 provided on the electron supply layer 18 and made of a semiconductor having a smaller band gap than the electron supply layer 18. Gate electrode 72 is placed on gate layer 70 .
  • the 2DEG 20 directly under the gate layer 70 can be depleted by the gate layer 70.
  • a normally-off type HEMT can be realized.
  • Such a HEMT is suitable for power devices that require high safety.
  • the electron supply layer 18 is an Al x Ga 1-x N layer (0.2 ⁇ x ⁇ 0.3). According to this configuration, when the Al composition ratio is 0.2 or more and 0.3 or less, the recess portion 54 including the recess inclined surface 18E, the recess curved surface 18D, and the recess bottom surface 18C is formed in the electron supply layer 18. be able to. Thereby, an increase in contact resistance between the electrode 30 (contact portion 32) and the 2DEG 20 via the electron supply layer 18 can be suppressed. Therefore, a HEMT with stable low resistance can be realized.
  • the contact portion 32 may have a curved surface 39B provided between the stepped portion 39 and the first portion 32AA of the inclined surface 32A.
  • the curved surface 39B has, for example, the same configuration as the curved surface 32C.
  • the length of the arc of the curved surface 39B is, for example, equal to the length of the arc of the curved surface 32C.
  • the electrode 30 may constitute the source electrode 74 and may not constitute the drain electrode 76. That is, while the contact portion 74A of the source electrode 74 corresponds to the contact portion 32 of the electrode 30, the contact portion 76A of the drain electrode 76 may not correspond to the contact portion 32 of the electrode 30. In this case, the contact portion 76A does not have the inclined surface 32A and the curved surface 32C like the contact portion 32.
  • the electrode 30 does not need to constitute the drain electrode 76 and the source electrode 74.
  • the contact portion 74A of the source electrode 74 does not have the inclined surface 32A and the curved surface 32C like the contact portion 32 of the electrode 30.
  • the configuration of at least one of the source electrode 74 and the drain electrode 76 may be changed to any of the configurations of the electrode 30 in the second to fourth embodiments.
  • the structure of the contact portion 32 of the electrode 30 corresponding to the source electrode 74 and the structure of the contact portion 32 of the electrode 30 corresponding to the drain electrode 76 may be different from each other.
  • the position of the tip surface 32B of the contact portion 32 in the Z-axis direction can be arbitrarily changed within the range of the thickness of the electron supply layer 18.
  • the tip surface 32B of the contact portion 32 may be in contact with the surface 16A of the electron transit layer 16. That is, the contact portion 32 may penetrate through the electron supply layer 18.
  • the contact portion 32 does not enter the electron transit layer 16 in the Z-axis direction.
  • the recessed slope 18E may be omitted from the recessed portion 54.
  • the recess portion 54 may have a recessed slope.
  • the recessed slope is provided in the electron transit layer 16.
  • the recessed inclined surface is inclined so that the opening width of the opening 50 becomes narrower toward the recessed curved surface 16D.
  • the opening width of the opening 50 can be defined by the size of the opening 50 in the X-axis direction.
  • the inclination angle of the recessed slope with respect to the Z-axis direction is equal to the inclination angle of the inner surface 18F of the electron supply layer 18 with respect to the Z-axis direction.
  • the recessed slope and the inner surface 18F are continuous so as to be flush with each other.
  • the gate layer 70 may be omitted.
  • a gate electrode 72 is formed on the electron supply layer 18. Thereby, the nitride semiconductor device 10 becomes normally on.
  • the first barrier layer 42 may be omitted.
  • the second barrier layer 44 may be omitted.
  • the insulating layer 24 may be omitted.
  • the term “on” includes the meanings of “on” and “above” unless the context clearly dictates otherwise.
  • the phrase “the first layer is formed on the second layer” refers to the fact that in some embodiments the first layer may be directly disposed on the second layer in contact with the second layer, but in other embodiments. It is contemplated that the first layer may be placed above the second layer without contacting the second layer. That is, the term “on” does not exclude structures in which other layers are formed between the first layer and the second layer.
  • each of the above embodiments in which the electron supply layer 18 is formed on the electron transit layer 16 has a structure in which an intermediate layer is located between the electron supply layer 18 and the electron transit layer 16 in order to stably form the 2DEG 20. Also included.
  • the Z-axis direction used in the present disclosure does not necessarily need to be a vertical direction, nor does it need to completely coincide with the vertical direction. Accordingly, in various structures according to the present disclosure (e.g., the structure shown in FIG. 1), “upper” and “lower” in the Z-axis direction described herein are “upper” and “lower” in the vertical direction. Not limited to one thing.
  • the X-axis direction may be a vertical direction
  • the Y-axis direction may be a vertical direction.
  • the opening (50) is a penetration part (52) penetrating the dielectric layer (22);
  • the opening (50) has a recess (54) continuous with the penetration part (52) and provided in the electron supply layer (18), and the opening (50) penetrates the dielectric layer (22). is also formed in at least a portion of the electron supply layer (18),
  • the inclined surface (32A) is a first portion (32AA) in contact with the dielectric layer (22); a second portion (32AB) in contact with the electron supply layer (18);
  • the nitride semiconductor device according to supplementary note 1, wherein the curved surface (32C) is in contact with the electron supply layer (18).
  • the tip surface (32B) is provided closer to the electron transit layer (16) than the center of the electron supply layer (18) in the thickness direction (Z-axis direction) of the electron supply layer (18). 3.
  • the opening (50) is a penetration portion (52) that penetrates both the dielectric layer (22) and the electron supply layer (18); a recess (54) that is continuous with the through-hole (52) and provided in the electron transit layer (16), and the opening (50) is connected to the dielectric layer (22) and the electron transit layer (16); Penetrating both supply layers (18) and forming at least a portion of the electron transport layer (16),
  • the contact portion (32) penetrates the dielectric layer (22) and the electron supply layer (18) via the opening (50) and reaches the electron transit layer (16),
  • the inclined surface (32A) is a first portion (32AA) in contact with the dielectric layer (22); a second portion (32AB) in contact with the electron supply layer (18);
  • the nitride semiconductor device according to supplementary note 1, wherein the curved surface (32C) is in contact with at least the electron transit layer (16).
  • the electron transit layer (16) includes a surface (16A) in contact with the electron supply layer (18) and a bottom surface (16C) in contact with the tip surface (32B),
  • the distance between the surface (16A) of the electron transit layer (16) and the bottom surface (16C) of the electron transit layer (16) in the thickness direction (Z-axis direction) of the electron transit layer (16) is 20 nm.
  • the contact portion (32) includes a step portion (39) provided between the first portion (32AA) and the second portion (32AB), The nitride semiconductor device according to any one of appendices 2 to 8, wherein the step portion (39) is in contact with a surface (18A) of the electron supply layer (18) that is in contact with the dielectric layer (22). .
  • the electrode (30) has a wiring part (34) provided on the dielectric layer (22),
  • the length (L2) of the wiring portion (34) in the width direction (X-axis direction) is equal to 2 of the length (L1) of the tip portion (32P) of the contact portion (32) in the width direction (X-axis direction).
  • the nitride semiconductor device according to any one of Supplementary notes 1 to 11, wherein the nitride semiconductor device is twice or more.
  • the electrode (30) includes an electrode layer (40), The nitride semiconductor device according to any one of Supplementary Notes 1 to 12, wherein the electrode layer (40) contains at least Ti, Al, and Cu.
  • the electrode (30) has a wiring part (34) provided on the dielectric layer (22),
  • the wiring section (34) includes a first barrier layer (42) in contact with the dielectric layer (22),
  • the wiring section (34) includes a second barrier layer (44) provided on the opposite side of the first barrier layer (42) with respect to the electrode layer (40). Physical semiconductor device.
  • the opening (50) includes a source opening (50A) and a drain opening (50B), a gate electrode (72) provided on the electron supply layer (18) and covered by the dielectric layer (22); a source electrode (74) electrically connected to the electron supply layer (18) through the source opening (50A); a drain electrode (76) electrically connected to the electron supply layer (18) through the drain opening (50B),
  • the nitride according to any one of Supplementary Notes 1 to 17, wherein at least one electrode (30) is provided and constitutes at least one of the source electrode (74) and the drain electrode (76).
  • the source opening (50A), the drain opening (50B), and the gate electrode (72) are spaced apart from each other,
  • the source opening (50A) is located on the opposite side of the gate electrode (72) from the drain opening (50B),
  • the source electrode (74) includes a field plate portion (74B) extending from the source opening (50A) to a position closer to the drain opening (50B) than the gate electrode (72). Physical semiconductor device.
  • the opening (50) is a penetration portion (52) that penetrates both the dielectric layer (22) and the electron supply layer (18); a recess (54) that is continuous with the through-hole (52) and provided in the electron supply layer (18), and the opening (50) is connected to the dielectric layer (22) and the electron supply layer (18); It penetrates both supply layers (18),
  • the contact portion (32) penetrates the dielectric layer (22) and the electron supply layer (18) via the opening (50),
  • the inclined surface (32A) is a first portion (32AA) in contact with the dielectric layer (22); a second portion (32AB) in contact with the electron supply layer (18);
  • the nitride semiconductor device according to supplementary note 1, wherein the tip surface (32B) is in contact with a surface (16A) of the electron transit layer (16) that is in contact with the electron supply layer (18).

Landscapes

  • Junction Field-Effect Transistors (AREA)
PCT/JP2023/006618 2022-03-29 2023-02-24 窒化物半導体装置 Ceased WO2023189048A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024511465A JPWO2023189048A1 (https=) 2022-03-29 2023-02-24
US18/890,816 US20250015152A1 (en) 2022-03-29 2024-09-20 Nitride semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022053891 2022-03-29
JP2022-053891 2022-03-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/890,816 Continuation US20250015152A1 (en) 2022-03-29 2024-09-20 Nitride semiconductor device

Publications (1)

Publication Number Publication Date
WO2023189048A1 true WO2023189048A1 (ja) 2023-10-05

Family

ID=88200436

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/006618 Ceased WO2023189048A1 (ja) 2022-03-29 2023-02-24 窒化物半導体装置

Country Status (3)

Country Link
US (1) US20250015152A1 (https=)
JP (1) JPWO2023189048A1 (https=)
WO (1) WO2023189048A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026050597A1 (en) * 2024-08-30 2026-03-05 Texas Instruments Incorporated Field plate integration for self-aligned contact and methods of manufacturing the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142706A (ja) * 1993-07-05 1995-06-02 Toshiba Corp ヘテロ接合半導体装置の製造方法およびヘテロ接合半導体装置
JP2007053185A (ja) * 2005-08-17 2007-03-01 Oki Electric Ind Co Ltd オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
JP2007329350A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008306083A (ja) * 2007-06-11 2008-12-18 Nec Corp Ｉｉｉ−ｖ族窒化物半導体電界効果型トランジスタおよびその製造方法
JP2010238838A (ja) * 2009-03-31 2010-10-21 Sanken Electric Co Ltd 半導体装置及び半導体装置の製造方法
JP2011091200A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 半導体装置及びその製造方法
WO2014148255A1 (ja) * 2013-03-19 2014-09-25 シャープ株式会社 窒化物半導体装置および窒化物半導体装置の製造方法
JP2019169552A (ja) * 2018-03-22 2019-10-03 ローム株式会社 窒化物半導体装置
WO2021149599A1 (ja) * 2020-01-24 2021-07-29 ローム株式会社 窒化物半導体装置の製造方法および窒化物半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142706A (ja) * 1993-07-05 1995-06-02 Toshiba Corp ヘテロ接合半導体装置の製造方法およびヘテロ接合半導体装置
JP2007053185A (ja) * 2005-08-17 2007-03-01 Oki Electric Ind Co Ltd オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
JP2007329350A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008306083A (ja) * 2007-06-11 2008-12-18 Nec Corp Ｉｉｉ−ｖ族窒化物半導体電界効果型トランジスタおよびその製造方法
JP2010238838A (ja) * 2009-03-31 2010-10-21 Sanken Electric Co Ltd 半導体装置及び半導体装置の製造方法
JP2011091200A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 半導体装置及びその製造方法
WO2014148255A1 (ja) * 2013-03-19 2014-09-25 シャープ株式会社 窒化物半導体装置および窒化物半導体装置の製造方法
JP2019169552A (ja) * 2018-03-22 2019-10-03 ローム株式会社 窒化物半導体装置
WO2021149599A1 (ja) * 2020-01-24 2021-07-29 ローム株式会社 窒化物半導体装置の製造方法および窒化物半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026050597A1 (en) * 2024-08-30 2026-03-05 Texas Instruments Incorporated Field plate integration for self-aligned contact and methods of manufacturing the same

Also Published As

Publication number Publication date
JPWO2023189048A1 (https=) 2023-10-05
US20250015152A1 (en) 2025-01-09

Similar Documents

Publication Publication Date Title
TWI663698B (zh) 半導體裝置
JP5044222B2 (ja) Ｉｉｉ族窒化物電流制御デバイスおよび製造方法
US8164117B2 (en) Nitride semiconductor device
JP6161910B2 (ja) 半導体装置
TW577127B (en) Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
JP5848680B2 (ja) 半導体装置および半導体装置の製造方法
US7417267B2 (en) Non-planar III-nitride power device having a lateral conduction path
JP7137947B2 (ja) 窒化物半導体装置
JP2006086354A (ja) 窒化物系半導体装置
US9680001B2 (en) Nitride semiconductor device
WO2015056797A1 (ja) 窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ
CN102623498A (zh) 半导体元件
JP7017579B2 (ja) 窒化物半導体装置
JP7813766B2 (ja) 窒化物半導体デバイス
CN113287200A (zh) 半导体器件及其制造方法
CN111712925B (zh) 半导体装置
WO2023276972A1 (ja) 窒化物半導体装置
JP5707463B2 (ja) 半導体装置とその製造方法
WO2024116612A1 (ja) 窒化物半導体デバイス
WO2023189048A1 (ja) 窒化物半導体装置
WO2023042617A1 (ja) 半導体装置
US20150357455A1 (en) Semiconductor device and method of manufacturing the same
JP7625767B2 (ja) 半導体装置および半導体装置の製造方法
TWI859917B (zh) 氮化物半導體裝置
US20240421220A1 (en) Nitride semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23779078

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2024511465

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23779078

Country of ref document: EP

Kind code of ref document: A1