JPWO2023047227A5 - - Google Patents

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Publication number
JPWO2023047227A5
JPWO2023047227A5 JP2023549159A JP2023549159A JPWO2023047227A5 JP WO2023047227 A5 JPWO2023047227 A5 JP WO2023047227A5 JP 2023549159 A JP2023549159 A JP 2023549159A JP 2023549159 A JP2023549159 A JP 2023549159A JP WO2023047227 A5 JPWO2023047227 A5 JP WO2023047227A5
Authority
JP
Japan
Prior art keywords
insulator
conductor
oxide
region
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023549159A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023047227A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2022/058438 external-priority patent/WO2023047227A1/ja
Publication of JPWO2023047227A1 publication Critical patent/JPWO2023047227A1/ja
Publication of JPWO2023047227A5 publication Critical patent/JPWO2023047227A5/ja
Pending legal-status Critical Current

Links

JP2023549159A 2021-09-21 2022-09-08 Pending JPWO2023047227A1 (https=)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021153623 2021-09-21
JP2021182108 2021-11-08
JP2022049107 2022-03-24
PCT/IB2022/058438 WO2023047227A1 (ja) 2021-09-21 2022-09-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023047227A1 JPWO2023047227A1 (https=) 2023-03-30
JPWO2023047227A5 true JPWO2023047227A5 (https=) 2025-09-11

Family

ID=85719196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023549159A Pending JPWO2023047227A1 (https=) 2021-09-21 2022-09-08

Country Status (5)

Country Link
US (1) US20240379866A1 (https=)
JP (1) JPWO2023047227A1 (https=)
KR (1) KR20240067242A (https=)
TW (1) TW202339171A (https=)
WO (1) WO2023047227A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12581747B2 (en) * 2022-06-20 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2025257706A1 (ja) * 2024-06-14 2025-12-18 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004865A (en) * 1993-09-06 1999-12-21 Hitachi, Ltd. Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
JP5136327B2 (ja) * 2008-09-25 2013-02-06 凸版印刷株式会社 防眩フィルム及びその製造方法並びに透過型液晶ディスプレイ
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI608616B (zh) * 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
KR102740089B1 (ko) * 2018-03-06 2024-12-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 적층체 및 반도체 장치

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