JPWO2023166378A5 - - Google Patents
Info
- Publication number
- JPWO2023166378A5 JPWO2023166378A5 JP2024504026A JP2024504026A JPWO2023166378A5 JP WO2023166378 A5 JPWO2023166378 A5 JP WO2023166378A5 JP 2024504026 A JP2024504026 A JP 2024504026A JP 2024504026 A JP2024504026 A JP 2024504026A JP WO2023166378 A5 JPWO2023166378 A5 JP WO2023166378A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- transistor
- insulator
- metal oxide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022033577 | 2022-03-04 | ||
| PCT/IB2023/051550 WO2023166378A1 (ja) | 2022-03-04 | 2023-02-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023166378A1 JPWO2023166378A1 (https=) | 2023-09-07 |
| JPWO2023166378A5 true JPWO2023166378A5 (https=) | 2026-01-19 |
Family
ID=87883161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024504026A Pending JPWO2023166378A1 (https=) | 2022-03-04 | 2023-02-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250185229A1 (https=) |
| JP (1) | JPWO2023166378A1 (https=) |
| CN (1) | CN118715619A (https=) |
| TW (1) | TW202339129A (https=) |
| WO (1) | WO2023166378A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12592275B2 (en) * | 2024-01-09 | 2026-03-31 | Macronix International Co., Ltd. | Memory structure and control method for reducing layout area of memory device |
| WO2025163445A1 (ja) * | 2024-01-31 | 2025-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100626036B1 (ko) * | 2004-11-17 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 상기 유기 발광 소자의 제조방법 |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2018203181A1 (ja) * | 2017-05-01 | 2018-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2023
- 2023-02-21 US US18/842,344 patent/US20250185229A1/en active Pending
- 2023-02-21 CN CN202380021941.0A patent/CN118715619A/zh active Pending
- 2023-02-21 JP JP2024504026A patent/JPWO2023166378A1/ja active Pending
- 2023-02-21 WO PCT/IB2023/051550 patent/WO2023166378A1/ja not_active Ceased
- 2023-02-23 TW TW112106784A patent/TW202339129A/zh unknown